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    4N90 MOSFET Search Results

    4N90 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4N90 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4n90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to


    Original     		PDF QW-R502-479 4n90

    4n90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF O-252 O-220 QW-R502-479 4n90

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF QW-R502-479

    4N90

    Abstract: mosfet 740 4n90 MOSFEt
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF O-252 O-220 QW-R502-479 4N90 mosfet 740 4n90 MOSFEt

    mosfet 740

    Abstract: 4n90
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original     		PDF O-252 O-220 QW-R502-479 mosfet 740 4n90

    EE40 core

    Abstract: OPTO MOC8102 464wp schematic diagram cga to vga converter SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS MTP4N90 etd39 ETD-39 MC3423P 5d-11 power thermistor
    Text: AN1080/D External−Sync Power Supply with Universal Input Voltage Range for Monitors Prepared by: S.K. Tong and K.T. Cheng http://onsemi.com APPLICATION NOTE ABSTRACT This paper describes the design of a low−cost 90 W flyback switching power supply for a multi−sync color


    Original     		PDF AN1080/D EE40 core OPTO MOC8102 464wp schematic diagram cga to vga converter SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS MTP4N90 etd39 ETD-39 MC3423P 5d-11 power thermistor

    GM 950 motorola

    Abstract: 4n90 4N85 N95 DIODE 4n90 MOSFEt
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MTM3N95 MTM3N100 MTM4N85 MTM4N90 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement M ode Silico n Gate T M O S These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching


    OCR Scan     		PDF MTM3N95 MTM3N100 MTM4N85 MTM4N90 TM3NS15----- GM 950 motorola 4n90 4N85 N95 DIODE 4n90 MOSFEt

    MTP4N85

    Abstract: GM 950 motorola MTP4N90 4N85 3N100 mtp3n95 MOSFET P 950 4N90
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP3N95 MTP3N100 MTP4N85 MTP4N90 Designer's Data Sheet P o w er Field E ffe c t T ransistor N-Channel Enhancement Mode Silicon Gate TMOS TM O S POWER FETs 3 and 4 AMPERES These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e ,


    OCR Scan     		PDF MTP3N95 MTP3N100 MTP4N85 MTP4N90 GM 950 motorola MTP4N90 4N85 3N100 MOSFET P 950 4N90

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    4n90

    Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R
    Text: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800


    OCR Scan     		PDF DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 O-220 4n90 4N80 4N80A IXTM4N80 4N80R

    4n90

    Abstract: 4N80A IXTM4N90
    Text: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan     		PDF DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 EL420 4n90 4N80A

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40