4N90 MOSFET Search Results

4N90 MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

4N90 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
4n90 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to	Original	QW-R502-479 4n90	PDF
4n90 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	O-252 O-220 QW-R502-479 4n90	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	QW-R502-479	PDF
4N90 Abstract: mosfet 740 4n90 MOSFEt Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	O-252 O-220 QW-R502-479 4N90 mosfet 740 4n90 MOSFEt	PDF
mosfet 740 Abstract: 4n90 Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	O-252 O-220 QW-R502-479 mosfet 740 4n90	PDF
EE40 core Abstract: OPTO MOC8102 464wp schematic diagram cga to vga converter SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS MTP4N90 etd39 ETD-39 MC3423P 5d-11 power thermistor Text: AN1080/D External−Sync Power Supply with Universal Input Voltage Range for Monitors Prepared by: S.K. Tong and K.T. Cheng http://onsemi.com APPLICATION NOTE ABSTRACT This paper describes the design of a low−cost 90 W flyback switching power supply for a multi−sync color	Original	AN1080/D EE40 core OPTO MOC8102 464wp schematic diagram cga to vga converter SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS MTP4N90 etd39 ETD-39 MC3423P 5d-11 power thermistor	PDF
GM 950 motorola Abstract: 4n90 4N85 N95 DIODE 4n90 MOSFEt Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MTM3N95 MTM3N100 MTM4N85 MTM4N90 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement M ode Silico n Gate T M O S These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching	OCR Scan	MTM3N95 MTM3N100 MTM4N85 MTM4N90 TM3NS15----- GM 950 motorola 4n90 4N85 N95 DIODE 4n90 MOSFEt	PDF
MTP4N85 Abstract: GM 950 motorola MTP4N90 4N85 3N100 mtp3n95 MOSFET P 950 4N90 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP3N95 MTP3N100 MTP4N85 MTP4N90 Designer's Data Sheet P o w er Field E ffe c t T ransistor N-Channel Enhancement Mode Silicon Gate TMOS TM O S POWER FETs 3 and 4 AMPERES These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e ,	OCR Scan	MTP3N95 MTP3N100 MTP4N85 MTP4N90 GM 950 motorola MTP4N90 4N85 3N100 MOSFET P 950 4N90	PDF
IRF 850 mosfet Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF	OCR Scan	O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet	PDF
4n90 Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R Text: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800	OCR Scan	DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 O-220 4n90 4N80 4N80A IXTM4N80 4N80R	PDF
4n90 Abstract: 4N80A IXTM4N90 Text: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 EL420 4n90 4N80A	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40	PDF