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    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03

    4p03L11

    Abstract: IPD50P03P4L-11 PG-TO252-3-11 optimos battery protection reverse 4p03l
    Text: IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on ,max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P03P4L-11 PG-TO252-3-11 4P03L11 -10V1) -10V2) 4p03L11 IPD50P03P4L-11 PG-TO252-3-11 optimos battery protection reverse 4p03l

    4p03L11

    Abstract: No abstract text available
    Text: IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on ,max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P03P4L-11 PG-TO252-3-11 4P03L11 -10V1) -10V2) 4p03L11