LG Air Conditioning Repair
Abstract: AB01939 Hearing Aid repair 3750A 3797TC grain of wheat H6P3 1838 b hearing aid integrated circuits kraft plus
Text: 3M Products for Construction Markets 3M Products for Construction Markets Make The Connection With 3M Contractor Solutions Construction Markets Division 3M Canada Company P.O. Box 5757 London, Ontario N6A 4T1 Canada 1 800-364-3577 www.3m.ca/construction Please recycle. Printed in Canada.
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0812-4210E
517-3748TC-1PC
3748TC
LG Air Conditioning Repair
AB01939
Hearing Aid repair
3750A
3797TC
grain of wheat
H6P3
1838 b
hearing aid integrated circuits
kraft plus
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832-6522
Abstract: 832-6257 rc1 marking code 832021 832-9040 832-0393
Text: SEI Resistors Visit SEIÕs Website at www.seielect.com Zero-Ohm Resistors Carbon Film Resistors SEI Type CD c ÒCrossoverÓor ÒJumperÓ Applications c ÒJWÓ Jumper Wire Also Available Dimensions Ñ Inches Mfr.Õs Type A B C D CD1/8W CD1/4W 1.10 ± .08 1.00 min.
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25-Up
832-6522
832-6257
rc1 marking code
832021
832-9040
832-0393
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7510C
Abstract: THS-635W THS-620Y THS-620W HellermannTyton MIL-M-81531 TYHC34-66 615Y THS-610Y marking 3t1
Text: Identifying SHRINK-TAG MARKERS HellermannTyton’s Shrink-Tag system is a heat shrink identification method which makes it easy to mark wire, cable, terminals, and other components. For efficient marking, Shrink-Tags can be printed using HellermannTyton’s thermal transfer printers and the
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510C2
510M4
7510C
7510M4
IMP210C2
IMP210M4
7510C
THS-635W
THS-620Y
THS-620W
HellermannTyton
MIL-M-81531
TYHC34-66
615Y
THS-610Y
marking 3t1
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Untitled
Abstract: No abstract text available
Text: 3 Diamond Grade Conspicuity Markings Series 983 Product Bulletin 983 June 2009 Description 3M™ Diamond Grade™ Conspicuity Markings Series 983 are highly retroreflective microprismatic markings designed to mark the sides and rear of vehicles for enhanced visibility and
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35-3A-09
1-800-3MHELPS
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STZ8043
Abstract: STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051
Text: STZ8000 Series Silicon Planar Zener Diodes For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
STZ8360A
STZ8360B
STZ8360C
STZ8390
STZ8390A
STZ8390B
STZ8390C
STZ8043
STZ8200
STZ8043B
zener 5c1
1n 53558
STZ8051
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zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
STZ8390C
OD-323
zener 2B1
marking code ZENER
zener 4a1
5c1 zener diode
marking code 5b1
zener 5c1
marking 3t1
zener 5A1
STZ8039
5B1 zener diode
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Untitled
Abstract: No abstract text available
Text: 3 Luminous Film 6900 Product Bulletin 6900 November 2008 Replaces PB 6900 dated July 2004 Description Compatible Products 3M Luminous Film 6900 is the high performance luminous film for safety and emergency exit signage. • Meets and exceeds ASTM E2072 and IMO
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E2072
0225-05-S-08
1-800-3MHELPS
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zener 2B1
Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
OD-323
zener 2B1
marking code ZENER
5c1 zener diode
5B1 zener diode
marking 3t1
planar transistor 5B1
zener 5c1
3A1 zener diode
marking code 5b1
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zener 2B1
Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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STZ8000
OD-323
STZ8390C
OD-323
zener 2B1
5c1 zener diode
3A1 zener diode
3A1 Zener
zener 5A1
marking code 5b1
zener 4a1
zener 4c1
marking code ZENER
marking 3t1
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reflective film
Abstract: scotchlite 8830
Text: 07 October Technical Data Sheet 3M Scotchlite Reflective Material ™ Pressure Sensitive Adhesive PSA Films Description 3M Scotchlite Reflective Material – Pressure Sensitive Adhesive (PSA) Films are composed of wide angle, exposed retroreflective lenses
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0235-02-F-06
reflective film
scotchlite
8830
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Untitled
Abstract: No abstract text available
Text: 3 Safety Products for Eye, Head and Face Protection 8043 page 1 of 5 Issue Date 03/01/04 Stylish eyewear that puts safety first. Introducing the new 3MTM Protective Eyewear 1750, 1751, 1752 and 1760. ! W NE 3MTM Safety Glasses 1752 The new 3M Protective Eyewear
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1-800-3M
35-2W-70
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103 transistor
Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)
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2SB1183F5
SC-63)
B1183
2SD1759
2SB1183F5
001470a
001471G
2SB1183F5,
103 transistor
marking code SSs
transistor PNP
2sb transistor
LB 122 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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900MHz
Q62702-F1501
OT-343
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Untitled
Abstract: No abstract text available
Text: Central Sem iconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed
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CMPD4448
CMPD4448
OT-23
25isec.
100mA
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Untitled
Abstract: No abstract text available
Text: Metallized Polyester Film Capacitors MKT Uncoated (Silver Caps) For ignition devices Versions with special dimensions can be supplied at short notice _ B 32 572 B 32 573 / * Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology
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A235b05
Vdc/16
235b05
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Untitled
Abstract: No abstract text available
Text: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V
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IRLZ24N
4A55452
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silicon npn planar rf transistor sot 143
Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base
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BFG10;
BFG10/X
OT143
7110B2b
OT143.
711Dfl2L
silicon npn planar rf transistor sot 143
marking c8 transistor
transistor K 2937
BFG10
small RF NPN POWER TRANSISTOR 2.5 GHZ
C5 MARKING TRANSISTOR
NPN planar RF transistor
RF NPN POWER TRANSISTOR 2.5 GHZ
RF POWER TRANSISTOR NPN
N70 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8883
fl235b05
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Am plifier Transistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE 1 DRAIN MAXIMUM RATINGS Symbol Value Unit D ra in -S o u rc e Voltage VdS 30 V dc D ra in -G a te Voltage Vd G 30 V dc G a te -S o u rc e Voltage
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MMBF4416LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: WS57C64F HIGH SPEED 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 8510207 • Standard EPROM Pinout • Available in PLDCC GENERAL DESCRIPTION
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WS57C64F
WS57C64F
WS57C64F-70CMB*
MIL-STD-883C
WS57C64F-70D
WS57C64F-70DI
WS57C64F-70DMB*
WS57C64F-70J
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displacement sensor strain gauge
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 10 kPa 0 to 1.45 PSI Uncompensated, Silicon Pressure Sensors MPX10 MPX12 SERIES The MPX10 and MPX12 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied
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MPX10
MPX12
371C-02
MPX10D
MPX12D
MPX10DP
MPX12DP
MPX10GP
MPX12GP
MPX10GVP
displacement sensor strain gauge
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Untitled
Abstract: No abstract text available
Text: S -204000 4M-bit MASK ROM The S-204000 is a high-speed, low-power 4,194,304-bit 524,288 words x 8 bits mask programmable ROM, that uses the C M O S process. Its completely static operation requires no clock. It is ideal for large-sized fixed memory of microcomputers or data terminal equipment.
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S-204000
304-bit
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MLC850
Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency
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BFG11
BFG11/X
OT143
BFG11
BFG11/X
OT143.
711DflSb
MLC850
equivalent for transistor tt 2222
RF Power Transistor spice
2222 031 capacitor philips
TT 2222 npn
"RF Power Transistor"
transistor tt 2222
NPN planar RF transistor
NPN RF Amplifier
RF POWER TRANSISTOR
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wiring diagram of o general window ac
Abstract: marking T79 DPDT 6 terminal window switch DR 25 specifications MLW3029 MLW3020
Text: MINIATURE/SNAP-IN MOUNTED/POWER RATED DISTINCTIVE FEATURES Industry’s first miniature snap-in, lighted rocker switch. Patented internationally. Actuators in various styles operate with firm, well-defined movements. Interlocking actuator prevents switch failure due to jamming or window locking.
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MLW3022-F1C-1A
MLW3022-F5C-2A
b42fl77b
wiring diagram of o general window ac
marking T79
DPDT 6 terminal window switch
DR 25 specifications
MLW3029
MLW3020
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