GD25D
Abstract: HM62W256LFP-8SLT HM62W256
Text: i HM 62W 256 S e rie s - 3.0 V & 3.3 V Supply 32,768-Word x 8-Bit Low Voltage Operation CMOS Static RAM Features Pin Description • Low voltage operation SRAM Single 3.3 V Supply • 0.8 jxm Hi-CMOS process • Highspeed Access time: 70/85 ns max
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HM62W256
768-Word
A0-A14
HM62W256LFP-7T
HM62W256LFP-8T
HM62W256LFP-7SLT
HM62W256LFP-8SLT
28-pin
FP-28DA)
0GES033
GD25D
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Untitled
Abstract: No abstract text available
Text: HN62W448I Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-770A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62W448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has realized high speed normal access 120 ns on 3.3 V supply.
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524288-word
16-bit/1048576-word
ADE-203-770A
HN62W448I
524288word
16-bit
1048576-word
42-pin
44-pin
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Untitled
Abstract: No abstract text available
Text: HM62W16255H Series 262114-word x 16-bit High-Speed CMOS Static RAM HITACHI ADE-203-751 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W16255H is an asynchronous high-speed static RAM, organized as 256-kword x 16 bits. It has realizes high-speed access time (10/12/15 ns) through the 0.35 |im CMOS process and high-speed circuit
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HM62W16255H
262114-word
16-bit
ADE-203-751
256-kword
400-mil,
44-pin
ns/12
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HM628512 RAM
Abstract: HM628512LFP-10SL HM628S12-10 hm6285128 HM628512-5 M628512
Text: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM The Hitachi HM628512 is a 4M-bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 ^im Hi-CMOS process technology. The device, packaged in a
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HM628512
524288-word
512-kword
525-mil
600-mil
44TbBD3
0Q2S022
HM628512 RAM
HM628512LFP-10SL
HM628S12-10
hm6285128
HM628512-5
M628512
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Untitled
Abstract: No abstract text available
Text: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-670 Z Preliminary - Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word
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HN58S65AI
8192-word
ADE-203-670
8192-word
64-byte
HN58S65ATI
TFP-28DB)
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Untitled
Abstract: No abstract text available
Text: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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HN29VT800
HN29VB800
1048576-word
524288-word
16-bit
ADE-203-781A
8-bit/512-kword
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Untitled
Abstract: No abstract text available
Text: HM5164400A Series HM5165400A Series 16777216-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-490 A (Z) Preliminary Rev. 0.1 Jun. 3, 1996 Description The Hitachi HM5164400A Series, HM5165400A Series are CMOS dynamic RAMs organized as 16,777,216-word x 4-bit. They employ the most advanced CMOS technology for high performance
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HM5164400A
HM5165400A
16777216-word
ADE-203-490
216-word
400-mil
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Untitled
Abstract: No abstract text available
Text: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.
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HM5221605
536-word
16-bit
ADE-203-199A
Hz/58
Hz/50
P7Z07
/77T7,
44TbED3
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HM65256BLP-10
Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Text: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time
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HM65256B
768-word
HM65256BLSP-10
HM65256BLSP-12
HM65256BLSP-15
HM65256BLSP-20
44rb203
A8-A14
44tbp03
HM65256BLP-10
dp - 20t
DG250
HM65256BFP-12T
HM65256BFP-10T
HM65256BFP-15T
HM65256BFP-20T
HM65256BLFP-10T
HM65256BLFP-12T
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m5165
Abstract: 332S1
Text: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary - Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM 5164165A Series, HM 5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance and
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HM5164165A
HM5165165A
4194304-word
16-bit
ADE-203-453
304-word
16-bit.
m5165
332S1
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a19t
Abstract: ns 4203 hn62444p a19to D1423
Text: HN62444 Series 4M 256K X 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62444 is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8bit. The low power consumption of this device makes it ideal for
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HN62444
16-bit)
16-bit
40-pin
48-lead
44-lead
a19t
ns 4203
hn62444p
a19to
D1423
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Untitled
Abstract: No abstract text available
Text: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-410C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word x 8-bit. They have realized high speed low power consumption and high reliability by
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HN58C256A
HN58C257A
32768-word
ADE-203-410C
64-byte
ns/100
ad1995
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