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    4Z PNP Search Results

    4Z PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    4Z PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LQFP-48P

    Abstract: k4143 CPH3106 CPH3206 CPH3303 MB3883 NDS355AN VT100 IN5829
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-4Z 运用于电源管理的 ASSP （专用集成电路） 6- 通道 DC/DC 转换器 IC，带有用于升压和降压 的同步整流器 MB3883 • 说明 MB3883 是一个使用脉宽调制（PWM）和同步整流实现六通道升压 / 降压的 DC/DC 转换集成电路，用于低电压


    Original     		PDF DS04-27225-4Z MB3883 MB3883 LQFP-48P BCC-48P FPT-48P-M05) LCC-48P-M02) LQFP-48P k4143 CPH3106 CPH3206 CPH3303 NDS355AN VT100 IN5829

    pa12

    Abstract: 5-Q08-AD4X-V1130
    Text: Housing Style - Rectangular Part Number 8.0 mm - Embeddable, picofast Connector Bi 5-Q08-AD4X-V1130 ID Number Features Em bed dab le Sen sin Ran g ge m m Inductive Sensors • S4414551 Output 5 2-Wire DC 8.0 mm - Embeddable, picofast Connector Uprox Bi


    Original     		PDF 5-Q08-AD4X-V1130 S4414551 S1608910 S1600600 S1601622 S1662008 5U-Q08-AN6X2-V1131 5-Q08-AN6X2-V1131 5-Q08-AN6X2-V1131/S34 7-Q08-AN6X2-V1131 pa12 5-Q08-AD4X-V1130

    PZTA94

    Abstract: 4z pnp A94 TRANSISTOR PNP
    Text: PZTA94 High-Voltage PNP Transistor Surface Mount P b Lead Pb -Free COLLECTOR 2,4 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 BASE 1 2 3 SOT-223 3 EMITTER Maximum Ratings Symbol Value Unit Collector-Emitter Voltage VCEO -400 Vdc Collector-Base Voltage VCBO


    Original     		PDF PZTA94 OT-223 21-Jul-08 OT-223 PZTA94 4z pnp A94 TRANSISTOR PNP

    MMBTA94

    Abstract: marking 4z sot-23
    Text: MMBTA94 High-Voltage PNP Transistor Surface Mount P b Lead Pb -Free COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC


    Original     		PDF MMBTA94 OT-23 MMBTA94 11-Jun-07 OT-23 marking 4z sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LMBTA94LT1G S-LMBTA94LT1G LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 1 The LMBTA94LT1G is designed for application that requires high voltage.


    Original     		PDF LMBTA94LT1G S-LMBTA94LT1G LMBTA94LT1G AEC-Q101 OT-23

    LMBTA94

    Abstract: lMBTA94LT1G
    Text: LESHAN RADIO COMPANY, LTD. LMBTA94LT1G LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product compliance with RoHS requirements. 1 2 Description SOT– 23 The LMBTA94LT1G is designed for application that requires high voltage.


    Original     		PDF LMBTA94LT1G LMBTA94LT1G OT-23 LMBTA94

    4z sot23 marking code

    Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
    Text: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.


    Original     		PDF C309N3 BTA1759N3 -400V) -20mA/-2mA. BTC4505N3. OT-23 UL94V-0 4z sot23 marking code marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23

    4z sot23 marking code

    Abstract: BTNA44N3 BTPA94N3
    Text: CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		PDF C309N3-H BTPA94N3 -400V) -10mA/-1mA. BTNA44N3. OT-23 UL94V-0 4z sot23 marking code BTNA44N3 BTPA94N3

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N

    HFA3134IHZ96

    Abstract: HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96 HFA3134 HFA3135
    Text: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN


    Original     		PDF HFA3134, HFA3135 HFA3134 HFA3135 FN4445 HFA3134IHZ96 HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96

    Untitled

    Abstract: No abstract text available
    Text: HFA3134, HFA3135 Data Sheet July 21, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN


    Original     		PDF HFA3134, HFA3135 HFA3134 HFA3135 FN4445

    HFA3135IHZ96

    Abstract: No abstract text available
    Text: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors FN4445.2 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		PDF HFA3134, HFA3135 FN4445 HFA3134 HFA3135 HFA3135IHZ96

    Schottky transistor

    Abstract: 4z sot23 marking code
    Text: WILLAS FM120-M+ THRU MMBTA94LT1 PNPSURFACE EPITAXIAL FM1200-M+ 1.0A MOUNTPLANAR SCHOTTKYTRANSISTOR BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features excellent power dissipation offers • Batch process We declare that thedesign,


    Original     		PDF FM120-M+ MMBTA94LT1 FM1200-M+ OD-123+ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Schottky transistor 4z sot23 marking code

    2am smd transistor

    Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
    Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels


    Original     		PDF SI-5155S O-220 Rati03S SPX-62S SI-3011S SPX-G32S SI-3101S SPZ-G36 SI-3102S SSB-14 2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5


    OCR Scan     		PDF 1987M

    AD667

    Abstract: LTX test AD75003 gan3 AD521 AD524 AD544 AD741 AD75004 AD7572
    Text: ILE D ANALOG DEV ICES INC oaibaoo 0 0 1 1 3 m a T-4Z-3,} Application Specific Integrated Circuits Analog Devices offers a full spectrum of capabilities in application specific integrated circuits ASICs . These chip-level systems can implement designs with 12-bit accuracy and 16-bit resolution


    OCR Scan     		PDF 12-bit 16-bit AD667 LTX test AD75003 gan3 AD521 AD524 AD544 AD741 AD75004 AD7572

    574 nec

    Abstract: transistor a4z
    Text: DATA SHEET NEC / ELECTRONDEVICE / SILICON TRANSISTOR / ^ ^ — G N 1A 4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Resistor Built-in TYPE o—A /V V ~ Rl Ò E Complementary to G A 1 A4Z ABSOLUTE M A XIM U M RATINGS Maximum Voltages and Currents Ta = 25 °C


    OCR Scan     		PDF

    analog multiplier MC1496

    Abstract: linear cmos logic Digital Logic circuit in Digital logic gates Components
    Text: sie t> MICRO LINEAR m b o i a m a ooQ57flb lib • uln 'T'- 4Z-3,\ 0 ^ Micro Linear USICs FB3635 Analog and Digital Tile Array GENERAL DESCRIPTION FEATURES The FB3635 offers both analog and digital circuit design on a single tile array. The top half of the FB3635 contains


    OCR Scan     		PDF ooQ57flb FB3635 LM324 LM339 720MI 80MHz. analog multiplier MC1496 linear cmos logic Digital Logic circuit in Digital logic gates Components

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTO R F N 1A 4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES P A C K A G E D IM EN SIO N S • in m illim e te r» R esistor B u ilt-in T Y P E 5 2.8 ± 0.2 O— ’W v - R i = 10 k£2 Ri ” 1 0.65‘ oils


    OCR Scan     		PDF

    n1l4

    Abstract: j569 transistor n y
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1L4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Resistor B u ilt-in TYPE • Com plem entary to G A 1 L 4 Z ABSOLUTE M AXIM UM RATINGS M axim um Voltages and Currents {T a = 25


    OCR Scan     		PDF

    L4Z marking

    Abstract: marking M61 marking M63
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2


    OCR Scan     		PDF 1987M L4Z marking marking M61 marking M63

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode

    NEC 743 lf

    Abstract: 2SA1743 transistor 2sa1
    Text: ~t — S 7 • 5/ — h NEC ,< * 7 — Silicon P o w e r T ran sis to r 2SA1 7 4 3 ' □ PNP X i i f f l L T WA £ 2SA1743 ii, ÜÏ&X>f - v f X y i 7 "C” L o w V c E s a t) T ” h F E W t - |-7 > D C / D C => > ' < - 9 ^ T ( ^ - f i : mm) 9 F 7 ^ '* t L t t l f ' t o


    OCR Scan     		PDF 2SA1743 lEI-620) NEC 743 lf transistor 2sa1

    TMP47C443DM

    Abstract: tmp*47c443n TMP47P443VM TMP47C243DM TMP47C243M TMP47C243N TMP47P443VN 210B-6F P47C443 GFIJ
    Text: TO SH IB A TMP47C243/443 CMOS 4 t f ' 7 h h P -7 TM P47C243 Nf TM P47C443 N TM P47C243 M, TM P47C443 M TMP47C243DM, TMP47C443DM V— X £ T M P47C 243/443ti^ TLCS-470 n ? n Xit 8H y l - y ' J 7 K ^ 7 i - X , 8 H' y [HBg- & t ' O H M L fzMiÊL> tb4fcf y b 's >


    OCR Scan     		PDF P47C243/443 P47C243 P47C443 TMP47C243DM, TMP47C443DM TMP47C243/443ti^ TLCS-47 TMP47C243N tmp*47c443n TMP47P443VM TMP47C243DM TMP47C243M TMP47P443VN 210B-6F GFIJ