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    5 AMP NPN DARLINGTON POWER TRANSISTORS Search Results

    5 AMP NPN DARLINGTON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5 AMP NPN DARLINGTON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX602 ZTX603 ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 5 PARAMETER SYMBOL


    Original     		ZTX602 ZTX603 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX604 ZTX605 ISSUE 1 – MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 PARAMETER SYMBOL


    Original     		ZTX604 ZTX605 100ms PDF

    D40CI

    Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734
    Text: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR


    OCR Scan     		TQ-202 TQ-202 D40CI D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734 PDF

    TIP127 equivalent

    Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
    Text: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:


    OCR Scan     		TIP125, TIP126, TIP127 TIP120 TIP122 T0-220AB 20fjs, TIP127 equivalent TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: h "7 > V 7, $ / Transistors 2SD1379 7 V —^ 2SD1379 NPN '> ,J = l> $ '- ,J > b > h y > y Z 5 i Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^ J K r iiiU /D im e n s io n s U n it: mm VJ‘ > 4 V C V ’kJlT 1) ? - ' ) > h > S ^ T ' h FE T * 5


    OCR Scan     		2SD1379 PDF

    GE6251

    Abstract: GE6253 IR LF 0038 GE6252
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS G E 6 2 5 1 ,2 ,3 450-55C VOLTS 10 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultrasonic equipment and


    OCR Scan     		GE6251 450-55C T0-204AA GE6252 GE62ISTICS GE625I GE6253 IR LF 0038 PDF

    D40C4

    Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
    Text: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and


    OCR Scan     		T-33-29 T0-20Î D40C4 D40C7 NPN POWER DARLINGTON TRANSISTORS PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 - JANUARY 1996_ FEATURES * * 60 Volt VCE0 Gain of 10K at lc=0.5 Amp PARTMARKING DETAILS - FMMT38A - 4J F M M T 3 8B -5 J F M M T 3 8 C -7 J


    OCR Scan     		FMMT38A FMMT38B FMMT38C FMMT38A TaiIllp250C TT7D576 7G57fl PDF

    2N6350

    Abstract: No abstract text available
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN POWER DARLINGTON 2N6350 thru 2N6353 5 AMP SWITCHING TRANSISTORS • • • • GEOMETRY 508 IC5A Low VCE Sat High Gain Monolithic Construction TO-33 MAXIMUM RATINGS cou£crou/c*a SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT


    OCR Scan     		2N6350 2N6353 100ohms 2N6351 2N6352 2N6353 2N6350, 2N6351 -2N6350 PDF

    2SD1536

    Abstract: No abstract text available
    Text: 7 0 2 0 = ^ OOOSfl^S 4 B R H n MDE D ROHM CO LTD h 7 > s ' X $ /Transistors 2SD1536M/2SD1861 - 2 S D i 5 3 S ^ f l NPN ^ 7 ^ 2 7 -2 9 y lJ = i> ? -lJ > l'> b 7 > v Z $ Power Amp. 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors • tt*


    OCR Scan     		2SD1536M/2SD1861 2SD1861 2SD1536M 2SD1861 2SD1536 PDF

    U914

    Abstract: 2SB1183F5 2SD1759F5 500C sie3
    Text: h ~7 > y X 2 D 2SD1759F5 £ /Transistors I S 1 7 5 9 F U — f-M fcf * •* V NPN '> IJ =I > h 7 > V * if $ f - y > h > 8 N * 5 Epitaxial Planar NPN Silicon Transistor (Darlington) H $ fl:fr iS tiffl/l-o w Freq. Power Amp. • ÿt-ft^iÉüâ/D im ensions (Unit : mm)


    OCR Scan     		2SD1759F5 S35eTShFET* 2SB1183F5 2SB1183F5. i33/Dimensions SC-63 Ta-25 D01J0T3 U914 2SB1183F5 2SD1759F5 500C sie3 PDF

    2SD2009

    Abstract: hFE-15000
    Text: h "7 > V 7s $ /Transistors 2SD2009 2SD2009 * - y > b > & m Epitaxial Planar NPN Silicon Transistor (Darlington) /M e d iu m Power Amp. • £Hfi\f'iil3l/Dim ensions (Unit : mm) 1) h > f t » T ' * h FE T i > 5 o 6.5 + 0.2 3.4+0.2 hFE=15000 (Typ.) (V c e = 3V, lC= 5 00 m A )


    OCR Scan     		2SD2009 2SD2009 hFE-15000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1759F5 I' 7 > y ^ í í / T ransistors 2S 1759F 5 D X tf $ # - I ' - i - M U > b NPN '> y =l > h - 7 $ > w m Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. 1^ fti^ S ilS I/D im e n s io n s (Unit : mm) 1) 3 f - U > S > ii^ T 'S ih F E T '& 5 o


    OCR Scan     		2SD1759F5 1759F 2SB1183F5 2SB1183F5. PDF

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ / T ransistors 2SD 1765 2SD1765 I fcf £ V NPN F> h 7 > V X ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • — r liill/D im e n s io n s U n it: mm 1) V y n - z m - KrtBEo 2) ' K - ' X • 1 5 v SfSjlcJStStrtjKo 3) 7 < > H - A K 7 S o T l ' 5 / c


    OCR Scan     		2SD1765 PDF

    A 933 S transistors

    Abstract: S T A 933 2SD1987
    Text: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features


    OCR Scan     		2SD1987 Pw--100ms A 933 S transistors S T A 933 2SD1987 PDF

    2SC4895

    Abstract: A13F
    Text: h ÿ > v 7* $ / I ransistors 9 C C 4 8 Q 5 2SC4895 it ;^ ^ '> 7 ^ U - t lN P N v U 3 > h 7 > y X ^ ^ - U > h > ii Epitaxial Planar NPN Silicon Transistor (Darlington) 1£J§)j£iI2j*ilillffl/Low Freq. Power Amp. • £W2\f'>ilSI/Dimensions (Unit : mm) 1)


    OCR Scan     		2SC4895 2SC4895 A13F PDF

    Untitled

    Abstract: No abstract text available
    Text: k ~7> V 7. $ / T ransistors 2SD1759/2SD1759F5 2SD1759 2SD1759F5 I • ft* • ^ t ^ r t ji H / D im e n s io n s U n it: mm 1) $ - ' ) > t N P N h> h Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors h > $ £ l*T 'a h F E T 'fe -5 o 2) B Eg|C *<)4kQ <0ffiSiSrtiiEo


    OCR Scan     		2SD1759/2SD1759F5 2SD1759 2SD1759F5 2SB1183. PDF

    2SD1986

    Abstract: No abstract text available
    Text: h 7 > v X $ /Transistors x t'$ * y 7 J l'7 U -j-B N P N 2SD1986 • 2SD1986 # - v > b>mm Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. • it-ffi^ j'iiE I/D im e n s io n s (U n it: mm) f t f t 1) j f - i j > hFE 2 ) a . - x • x 5 -y


    OCR Scan     		2SD1986 100ms 2SD1986 PDF

    2SD2195

    Abstract: No abstract text available
    Text: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5


    OCR Scan     		2SD2195 2SD2195 PDF

    2SD1783

    Abstract: No abstract text available
    Text: Is 7 > V £ / T ransistors 2SD1783 2SD1783 i t N P N y u n > ^ - u > h> V y ' s v Z V Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • \fi£ED/Dim ensi6ns U n it: mm NiryiV;Vdi-7- 1) =i u ? 3 • A : - ^ f y 5 C 6 0 V ( p 'y x ^ - $ -i T - K £ r t i t


    OCR Scan     		2SD1783 2SD1783 PDF

    2SD1783

    Abstract: 2A 5v ZENER DIODE 60V transistor npn 2a FE2000
    Text: Y - j s v T s * ? / Transistors 2SD1783 2S D 1783 I t N P N h> h ÿ > y 'z $ M M M M t J i ^ ^ F S / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • W fé\f">£ /D im en siô n s Unit : mm S ir > J V ;V ^ T 1) =1 K 7 ^ • /K‘-7 .^ tC 6 0 V C 0 'y x ± 4. 5±0.2


    OCR Scan     		2SD1783 O-220 2SD1783 2A 5v ZENER DIODE 60V transistor npn 2a FE2000 PDF

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201 PDF

    SK9458

    Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
    Text: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,


    OCR Scan     		Wbfl73 aODqfl37 SK9443 SK9442 SK9444 SK9445 SK9446 SK9447 SK9447 T-023 SK9458 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9450 PDF

    SK3893

    Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
    Text: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current


    OCR Scan     		SK3861 SK3721 SK3862 SK3722 SK3865A SK3866A SK3867A SK3867A T-036 SK3896 SK3893 sk3896 SK3936 SK3935 SK93 sk3948 SK3897 sk3895 PDF