SiR470DP
Abstract: S-82146 S82146
Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR470DP
capacit27
S-82146
15-Sep-08
S82146
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Si7880ADP
Abstract: No abstract text available
Text: SPICE Device Model Si7880ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7880ADP
to-10-V
18-Jul-08
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Si4421DY
Abstract: No abstract text available
Text: SPICE Device Model Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4421DY
18-Jul-08
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SiR470DP
Abstract: S-82146 S82146
Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR470DP
18-Jul-08
S-82146
S82146
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ4917EY www.vishay.com Vishay Siliconix Dual P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SQ4917EY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR470DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiR470DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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sprague DIP
Abstract: dale 685
Text: TYPE CWR06 Solid Tantalum Chip Capacitors MIDGET Solid-Electrolyte Military, MIL-C-55365/4 Qualified FEATURES • Maximum capacitance. • Minimum size. • Weibull Failure Rates B, C, D; Exponential M, P, R, S. • Tape and reel available per EIA 481-1 and -2.
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CWR06
MIL-C-55365/4
sprague DIP
dale 685
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vishay cwr09
Abstract: vishay capacitors cwr09 MIL-C-55365/4 cwr09 CWR09 VISHAY CWR06 MIL-C-55365 roederstein capacitor tantalum cwr09m105
Text: TYPE CWR09 Solid Tantalum Chip Capacitors Molded, Solid-Electrolyte, Military, MIL-C-55365/4 Qualified FEATURES • Completely interchangeable with CWR06. • Maximum capacitance. • Minimum size. • Weibull Failure Rates B, C, D; Exponential M, P, R, S.
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CWR09
MIL-C-55365/4
CWR06.
vishay cwr09
vishay capacitors cwr09
cwr09
CWR09 VISHAY
CWR06
MIL-C-55365
roederstein capacitor tantalum
cwr09m105
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4425b
Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Text: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station
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Si4421DY
12-Dec-03
AN826
20-Jun-03
4425b
V30114-T1
vishay siliconix code marking to-220
marking code 20L sot-23 sot23
to252 footprint wave soldering
siliconix an808
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.0480 RDS(on) (Ω) at VGS = -4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DG333
Abstract: JTW 02
Text: Temic DG333/334 S e m i c o n d u c t o r s Precision Quad SPDT Analog Switches Features • • • • • • • • • • • Benefits ± 22-V Supply Voltage Range TTL and CMOS Compatible Logic Low On-Resistance 17 Q On-Resistance Matched Between Channels (<2 Q)
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dg333/334
DG334
DG334
20-Pin
DG334DJ
DG333DW
DG334DW
02-May-97
DG333
JTW 02
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4136 pc
Abstract: No abstract text available
Text: Temic DG333/334 S e m i c o n d u c t o r s Precision Quad SPDT Analog Switches Features Benefits Applications • ± 2 2 -V S upply V oltage R ange • T T L and C M O S C om patible Logic • L ow O n-R esistance 17 Q R ail-to-R ail A nalog Signal R ange
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DG333/334
20-Pin
DG334DJ
DG333DW
DG334DW
02-May-97
4136 pc
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MAX334CPE
Abstract: No abstract text available
Text: y k i y j x i > k i High Speed Quad SPST Analog Sw itch _ Features _ ♦ ♦ Rds ON 500 (max.) Guaranteed Break-Before-Make Switching ♦ Single or Bipolar Supply Operation ♦ CMOS and TTL Logic Compatible + Faster, Lower R0N Replacement for DG201 and
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DG201
DG211
MAX334
DG211,
100ns/DIV
MAX334CPE
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CK408
Abstract: CK-408
Text: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage
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4480DY
CK408
CK-408
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2N5196
Abstract: 2N5196-9 2N5198 2N5199 2N5199CHP 2N5545-47 2NS197 U231-35 FET package TO-71
Text: 2N 5199 2N5198 2N5197 2N5196 B monolithic dual n-channel JFETs designed fo r Siliconix Perform ance Curves N N P See Section 5 . BENEFITS • Minimum System Error and Calibration 5 mV Maximum Offset 2N5196, 97 • Low Drift 5 t iV r C Maximum (2N5196)
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2N5196,
2N5196)
VDS-20V
2N5196
2N5196-9
2N5198
2N5199
2N5199CHP
2N5545-47
2NS197
U231-35
FET package TO-71
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Untitled
Abstract: No abstract text available
Text: . designed for B Siliconix DG161 DG163 Drivers with Differentially Driven Normally Open and Normally Closed FET Switches BENEFITS • • Switching High Frequencies ■ Switching in Satellite Applications Higher Signal Bandwidth Switching Capa bilities
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DG161
DG163
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DVD150T
Abstract: DV2810S DV2810W DV2805S DV2805W DV2805Z DV2810Z DV2820S DV2820W DV2820Z
Text: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5
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28Vdc
DV2805S
DV2805W
DV2805Z
DV2810S
DV2810W
DV2810Z
DV2820S
DV2820W
DV2820Z
DVD150T
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SI99780W
Abstract: si99780
Text: SÌ9978DW Vishay Siliconix Configurable H-Bridge Driver FEATURES • • • H-Bridge or Dual Half-Bridge Operation • C ross-Conduction Protected 20- to 40-V Supply • C urrent Limit Static dc Operation • Undervoltage Lockout • ESD Protected • Fault Output
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9978DW
Si9978DW
S-60752--
05-Apr-99
SI99780W
SI99780W
si99780
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A ) I*DS(on) ( ß ) 0.035 @ V qS = 10 V ± 6.0 0.040 @ VGS = 6.0 V ± 5.5 80 ,0 * ' SO -8 It . 0 -'I- Top View N-Channe! M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4480DY
S-49459--Rev.
J7-Dec-96
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4532DY S e m ic onduc tors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) N -C h a n n e ) P -C h a n n e ) r DS(on) (£2) I d (A ) 0 .0 6 5 @ V G S = 10 V ± 3 .9 0 .0 9 5 @ V GS = 4 .5 V ± 3 .1 0 .0 8 5 @ V Gs = - 1 0 V
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Si4532DY
002072b
S-49520â
I8-Dec-96
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V
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4532DY
S-49520--Rev.
18-Dec-96
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