Photo Modules
Abstract: No abstract text available
Text: IrDA Modules Photo Link Modules zInternal structure figure IrDA modules 5 2 PhotoDiode 4 2(IC) 2(LED) 6 7 1 3 No. 1. 2. 3. 4. 5. 6. 7. Part Name Frame Die Die Attach Wire Molding Marking Shield case Materials (method) Glass epoxy (Outer lead : Au plated)
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MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 P b Lead Pb -Free 1 4 5 6 NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Thermal Characteristics Characteristics (1)
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MUN5211DW
OT-363
SC-88)
29-Dec-05
OT-363
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
7L Marking
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Untitled
Abstract: No abstract text available
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 * “G” Lead Pb -Free 1 4 5 6 NPN+NPN 2 4 3 SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC Value
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MUN5211DW
OT-363
SC-88)
OT-363
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INFINEON PART MARKING
Abstract: H906 btm 180
Text: Product Brief BTM 7751G Trilith IC T H E B T M 7 7 5 1 G is part of the Trilith IC family containing three dies in Features one package: One double high-side switch and two low-side switches. The drains • Quad D-MOS switch driver of these three vertical DMOS chips are mounted on separated lead frames.
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7751G
7751G
B112-H9064-X-X-7600
NB07-1175
INFINEON PART MARKING
H906
btm 180
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PG-DSO-28-22
Abstract: BTM 7750G 4278G 7750G H906 btm 180 INFINEON package PART MARKING btm Infineon
Text: Product Brief BTM 7750G Trilith IC T H E B T M 7 7 5 0 G is part of the Trilith IC family containing three dies in Features one package: One double high-side switch and two low-side switches. The drains • Quad D-MOS switch driver of these three vertical DMOS chips are mounted on separated lead frames.
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7750G
7750G
B112-H9063-X-X-7600
NB07-1175
PG-DSO-28-22
BTM 7750G
4278G
H906
btm 180
INFINEON package PART MARKING
btm Infineon
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MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free R2 1 4 6 5 4 R2 Q1 R1 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current
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MUN5211DW
OT-363
SC-88)
20-Jan-09
OT-363
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
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Untitled
Abstract: No abstract text available
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free 4 4 R2 Q1 R2 R1 1 6 5 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current
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MUN5211DW
OT-363
SC-88)
29-Dec-05
OT-363
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bc857 sot363
Abstract: BC856 BC857 BC858 bc856bdw3b BC857CDW BC857BDW bc856b
Text: BC856BDW Series PNP Dual General Purpose Transistors P b Lead Pb -Free 2 3 1 6 5 1 4 5 2 4 3 6 SOT-363(SC-88) PNP+PNP Maximum Ratings Symbol BC856 BC857 BC858 Unit VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO IC 5.0 5.0
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BC856BDW
OT-363
SC-88)
BC856
BC857
BC858
14-Nov-07
OT-363
bc857 sot363
BC856
BC857
BC858
bc856bdw3b
BC857CDW
BC857BDW
bc856b
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2SC5004
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)
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PA804TC
2SC5004)
PA804TC
PA804TC-T1
2SC5004
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H31002P
Abstract: ic2005 h31002 H1N4004 H1N4148 HMBZ5230B HMBZ5235B
Text: HI-SINCERITY Spec. No. : IC200501 Issued Date : 2005.03.01 Revised Date : 2005.03.25 Page No. : 1/5 MICROELECTRONICS CORP. H31002P BIPOLAR TONE RINGER IC Description 8-Lead Plastic DIP-8 Package Code: P The H31002P is a bipolar integrated circuit. It is designed for telephone bell replacement. It
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IC200501
H31002P
H31002P
200oC
183oC
217oC
260oC
245oC
ic2005
h31002
H1N4004
H1N4148
HMBZ5230B
HMBZ5235B
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2SB624
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA
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2SB624
SC-59
-500mA
-250mA
-200mA
-100mA
16-Aug-05
SC-59
2SB624
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UR6225L
Abstract: UR6225-3 UR6225 UR6225G ci 4410 pin ic marking code T92 Marking T92 SOT-23 PIN
Text: UNISONIC TECHNOLOGIES CO., LTD UR6225 CMOS IC POSITIVE VOLTAGE REGULATOR 3 5 2 SOT-25 1 SOT-89 1 TO-92 FEATURES Lead-free: UR6225L Halogen-free: UR6225G * Maximum output current: 300mA within max. power dissipation, VOUT = 5.0V * Output voltage range: 1.2V ~ 6.0V in 0.1V increments
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UR6225
UR6225
OT-23
OT-25
OT-89
UR6225L
UR6225G
QW-R502-030
UR6225L
UR6225-3
UR6225G
ci 4410
pin ic marking code T92
Marking T92 SOT-23 PIN
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transistor dc 558 npn
Abstract: 2SC5843
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5843
2SC5843-T3
transistor dc 558 npn
2SC5843
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U74AHC1G00G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U74AHC1G00 CMOS IC 2-INPUT NAND GATE 3 2 1 DESCRIPTION 5 4 The U74AHC1G00 is a 2-input NAND gate which provides the Function Y=A*B . SOT-25 3 FEATURES 4 SOT-353 ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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U74AHC1G00
U74AHC1G00
OT-25
OT-353
U74AHC1G00L-AF5-R
U74AHC1G00G-AF5-R
U74AHC1G00L-AL5-R
U74AHC1G00G-AL5-R
OT-25
OT-353
U74AHC1G00G
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DTA124T
Abstract: DTC124T T108
Text: IMD1A Transistors Power management dual digital transistors IMD1A V VCEO 50 V VEBO 5 V IC 100 mA Pc 300(TOTAL) mW Tj 150 °C −55~+150 °C Tstg ∗ 200mW per element must not be exceeded. (3) 1.6 2.8 0.3Min. ∗ Each lead has same dimensions ROHM : SMT6
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200mW
SC-74
50age
100MHz
DTA124T
DTC124T
T108
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Untitled
Abstract: No abstract text available
Text: PD- 96063A IRG4PH50KPbF Lead-Free AC www.irf.com 1 10/26/09 IRG4PH50KPbF 2 www.irf.com IRG4PH50KPbF www.irf.com 3 IRG4PH50KPbF 4 www.irf.com IRG4PH50KPbF www.irf.com 5 IRG4PH50KPbF D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X IC @25°C 50V 6000µF 100V Fig. 13a. Clamped Inductive Load Test Circuit
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6063A
IRG4PH50KPbF
O-247AC
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Untitled
Abstract: No abstract text available
Text: IMD1A Transistors Power management dual digital transistors IMD1A V VCEO 50 V VEBO 5 V IC 100 mA Pc 300(TOTAL) mW Tj 150 °C −55~+150 °C Tstg ∗ 200mW per element must not be exceeded. (3) 1.6 2.8 0.3Min. ∗ Each lead has same dimensions ROHM : SMT6
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DTA124T
DTC124T
SC-74
200mW
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U74AHC1G00
Abstract: U74AHC1G00L-AF5-R
Text: UNISONIC TECHNOLOGIES CO., LTD U74AHC1G00 CMOS IC 2-INPUT NAND GATE 3 2 1 DESCRIPTION 5 4 The U74AHC1G00 is a 2-input NAND gate which provides the Function Y=A*B . SOT-25 3 FEATURES 4 SOT-353 ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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U74AHC1G00
U74AHC1G00
OT-25
OT-353
U74AHC1G00L-AF5-R
U74AHC1G00G-AF5-R
U74AHC1G00L-AL5-R
U74AHC1G00G-AL5-R
U74AHC1G00L-AF5-R
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2SC5656
Abstract: IC 751 1124 marking 720 transistor NEC JAPAN 237 521 02
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5656 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES • 1006 package employed 1.0 x 0.6 × 0.5 mm • NF = 1.3 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
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2SC5656
S21e2
2SC5656-T1
2SC5656
IC 751 1124
marking 720 transistor
NEC JAPAN 237 521 02
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LTC1728ES5-2.5
Abstract: LTC1727 LTC1727-2 LTC1727-5 LTC1728 LTC1728-5
Text: Final Electrical Specifications r r i m w TECHNOLOGY _ LTC1727/LTC1728 M ic ro p o w e r Precision Triple Supply M onitors in 8-Lead MSOP a n d 5-Lead SOT-23 P acka ges N o v e m b e r 1999 FCRTURCS D C S C R IP TIO n • Monitors Three Inputs Simultaneously
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LTC1727-5:
LTC1727-2
LTC1728-5:
LTC1728-2
10joA
200ms
LTC1727
LTC1727:
LTC1728:
OT-23
LTC1728ES5-2.5
LTC1727-5
LTC1728
LTC1728-5
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MARKING JW SOT-23
Abstract: No abstract text available
Text: r r u n m _ LT1460S3-5 SOT-23 TECHNOLOGY M ic ro p o w e r Series R efe re nce in SOT-23 FCRTURCS DCSCRIPTIOn • 3-Lead SOT-23 Package ■ Low Drift: 20ppm/°C Max ■ High Accuracy: 0.2% Max The LT 1460S3-5 is a SOT-23 micropower series reference
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LT1460S3-5
OT-23)
OT-23
1460S3-5
LT1019
LT1027
LT1236
LT1634
MARKING JW SOT-23
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Untitled
Abstract: No abstract text available
Text: ,020[0.51 ] BU SHIN G LEAD . .0 8 6 + .0 0 5 [2.19] 0.105 + .0 05 [2.67] FINISH GOLD GOLD FINISH CAPACITANCE 2000pF +50X/-20X TEMP, -55 *C TD RAN GE CURRENT 5 WORKING VOLTAGE .020[0.51] 7 ' - T NO POTTING ALLOWED IN SLOTS ,005 50 VDC Dhm s MAX, S C H E M A T IC
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2000pF
50X/-20X
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Untitled
Abstract: No abstract text available
Text: HS-6664RH Semiconductor Radiation Hardened 8K X 8 CMOS PROM September 1995 Pinouts • 1.2 Micron Radiation Hardened Bulk CMOS 28 LEAD CERAM IC SBDIP CASE O UTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • Transient Output Upset >5 x 10s RAD Si /s NC | T
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HS-6664RH
MIL-STD-1835,
CDIP2-T28
HS-6664RH
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Untitled
Abstract: No abstract text available
Text: $ M P IC 1 2 C 5 X X icrochip 8-Pin, 8-Bit CMOS Microcontroller Devices included in this Data Sheet: CMOS Technology: PIC12C508 and PIC12C509 are 8-bit microcontrollers packaged in 8-lead packages. They are based on the Enhanced PIC16C5X family. • Low power, high speed CMOS EPROM
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PIC12C508
PIC12C509
PIC16C5X
PIC12C508
PIC12C509
DS40139A-page
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