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    5.8A, 25V, N CHANNEL MOSFET Search Results

    5.8A, 25V, N CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    5.8A, 25V, N CHANNEL MOSFET Price and Stock

    Navitas Semiconductor G3R30MT12J

    N-Channel SiC MOSFET - Vds:1200V - Rds:30ohms - TO-263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com G3R30MT12J
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    • 1000 $17.7
    • 10000 $17.7
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    Navitas Semiconductor G3R75MT12D

    N-Channel SiC MOSFET - Vds:1200V - Rds:75ohms - TO-247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com G3R75MT12D
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    • 10 $10.34
    • 100 $8.69
    • 1000 $8
    • 10000 $7.88
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    Navitas Semiconductor G3R40MT12J

    N-Channel SiC MOSFET - Vds:1200V - Rds:40ohms - TO-263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com G3R40MT12J
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    • 1000 $13.66
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    Navitas Semiconductor G3R75MT12K

    N-Channel SiC MOSFET - Vds:1200V - Rds:75ohms - TO-247-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com G3R75MT12K
    • 1 -
    • 10 $10.63
    • 100 $8.93
    • 1000 $8.22
    • 10000 $8.1
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    Navitas Semiconductor G3R160MT17J

    N-Channel SiC MOSFET - Vds:1700V - Rds:160ohms - TO-263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com G3R160MT17J
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    Find more 5.8A, 25V, N CHANNEL MOSFET price and stock on Findchips.com

    5.8A, 25V, N CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSS4936

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 37m 5.8A Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra


    Original     		PDF GSS4936 GSS4936

    ap4936gm

    Abstract: No abstract text available
    Text: AP4936GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching 25V RDS ON 37mΩ ID G2 ▼ RoHS Compliant BVDSS 5.8A S2 G1 SO-8 S1 Description


    Original     		PDF AP4936GM ap4936gm

    4560r

    Abstract: mosfet 4812 PJ4812 SOIC-08
    Text: PJ4812 25V Dual N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS ON , VGS@10V,IDS@5.8A=15mΩ • RDS(ON), VGS@4.5V,IDS@4.7A=24mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters


    Original     		PDF PJ4812 SOIC-08 SOIC-08 MIL-STD-750 4560r mosfet 4812 PJ4812

    d237m

    Abstract: ap4936m
    Text: AP4936M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D2 ▼ Simple Drive Requirement D1 D1 ▼ Fast Switching BVDSS 25V RDS ON 37mΩ ID 5.8A G2 S2 SO-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4936M d237m ap4936m

    680MJ

    Abstract: No abstract text available
    Text: SSFP6N80 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 800V Simple Drive Requirement ID25 = 5.8A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP6N80 00A/s di/dt200A/S width300S; 680MJ

    BUZ73A equivalent

    Abstract: buz73a BUZ73 ta4600 BUZ76A TB334
    Text: BUZ73A Semiconductor Data Sheet 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2263.1 Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.600Ω (BUZ73 field effect transistor designed for applications such as


    Original     		PDF BUZ73A BUZ73 TA4600. BUZ73A equivalent buz73a ta4600 BUZ76A TB334

    smd diode 74a

    Abstract: 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25


    Original     		PDF KRF7319 -100A/ smd diode 74a 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2


    Original     		PDF IRF7313QPbF EIA-481 EIA-541. PN channel MOSFET 10A

    IRF7319

    Abstract: 1606a 1606a mosfet 5.8A, 25V, N Channel MOSFET
    Text: PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 D1 D1 N-Ch P-Ch 30V -30V


    Original     		PDF IRF7319 IRF7319 1606a 1606a mosfet 5.8A, 25V, N Channel MOSFET

    IRF7319PBF

    Abstract: irf MOSFET p-CH
    Text: PD - 95267 IRF7319PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description


    Original     		PDF IRF7319PbF and12 EIA-481 EIA-541. IRF7319PBF irf MOSFET p-CH

    Untitled

    Abstract: No abstract text available
    Text: PD - 95267 IRF7319PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 30V -30V VDSS


    Original     		PDF IRF7319PbF EIA-481 EIA-541.

    EIA-541

    Abstract: F7101 IRF7101 PN channel MOSFET 10A
    Text: PD - 96125A IRF7313QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description


    Original     		PDF 6125A IRF7313QPbF extrem461 EIA-481 EIA-541. EIA-541 F7101 IRF7101 PN channel MOSFET 10A

    96364

    Abstract: No abstract text available
    Text: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF AUIRF7319Q 96364

    Untitled

    Abstract: No abstract text available
    Text: AUIRF7319Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive [Q101] Qualified*


    Original     		PDF AUIRF7319Q

    Untitled

    Abstract: No abstract text available
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		PDF 96364B AUIRF7319Q

    p-channel 250V 30A power mosfet

    Abstract: AUIRF7379Q
    Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified


    Original     		PDF 96366B AUIRF7379Q p-channel 250V 30A power mosfet AUIRF7379Q

    Untitled

    Abstract: No abstract text available
    Text: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified


    Original     		PDF 96366B AUIRF7379Q

    Untitled

    Abstract: No abstract text available
    Text: AUIRF7379Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*


    Original     		PDF AUIRF7379Q

    Transistor Mosfet N-Ch 30V

    Abstract: No abstract text available
    Text: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '


    Original     		PDF 6111A IRF7379QPbF EIA-481 EIA-541. Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7379QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96366 AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified


    Original     		PDF AUIRF7379Q

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 6 0 6 A International IÖ R Rectifier IRF7319 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-C H A N N E L M O S F E T 51 □ !


    OCR Scan     		PDF IRF7319

    IRF7319

    Abstract: 49AA
    Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch


    OCR Scan     		PDF IRF7319 IRF7319 49AA

    1RF7319

    Abstract: IRF7319 IRF7319 0 MOSFET ior 144
    Text: PD - 9.1606A International I R Rectifier IRF7319 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-Ch V dss 30V P-Ch -3 0 V R d S oti 0 . 0 2 9 Q 0 .0 5 8 Î2


    OCR Scan     		PDF IRF7319 C-150 Fig20. C-151 1RF7319 IRF7319 IRF7319 0 MOSFET ior 144