SML50EUZ03B
Abstract: No abstract text available
Text: SML50EUZ03B Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp Back of Case TECHNOLOGY Cathode SML The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50EUZ03B
50EUZ03B
SML50EUZ03B
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SML50EUZ03S
Abstract: freewheeling diode 50A
Text: SML50EUZ03S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50EUZ03S
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SML50EUZ03S
10SUZ12D
50EUZ03S
SML50EUZ03S
freewheeling diode 50A
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Untitled
Abstract: No abstract text available
Text: SML50SUZ03B SEME LAB TO-247 Package Back of Case Cathode Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery SML 50SUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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O-247
SML50SUZ03B
50SUZ03B
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SML50SUZ03LC
Abstract: freewheeling diode 50A
Text: SML50SUZ03LC SEME LAB Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp TO-264 Package Back of Case Cathode SML 50SUZ03LC TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50SUZ03LC
O-264
50SUZ03LC
SML50SUZ03LC
freewheeling diode 50A
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SML50EUZ03B
Abstract: No abstract text available
Text: SML50EUZ03B SEME LAB TO-247 Package Back of Case Cathode Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 50EUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50EUZ03B
O-247
50EUZ03B
SML50EUZ03B
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h48 diode
Abstract: H100 SML50EUZ03JD diode H48 48 VOLT 10 AMP smps diode L
Text: SML50EUZ03JD SEME LAB SOT-227 Package 1- Cathode 2 Enhanced Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp 2- Anode 2 TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 5 0 E U Z 0 3 JD diode features a triple charge control action utilising
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SML50EUZ03JD
OT-227
h48 diode
H100
SML50EUZ03JD
diode H48
48 VOLT 10 AMP smps
diode L
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SML50SUZ03S
Abstract: No abstract text available
Text: SML50SUZ03S SEME LAB 3 D PAK Package Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50SUZ03S Semelab’s Graded Buffer Zone technology combined with
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SML50SUZ03S
10SUZ12D
50SUZ03S
SML50SUZ03S
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SML50EUZ03LC
Abstract: No abstract text available
Text: SML50EUZ03LC SEME LAB TO-264 Package Back of Case Cathode SML 50EUZ03LC Enhanced Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50EUZ03LC
O-264
50EUZ03LC
SML50EUZ03LC
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freewheeling diode 50A
Abstract: diode H48 H100 SML50SUZ03JD
Text: SML50SUZ03JD SEME LAB Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp SOT-227 Package 1- Cathode 2 2- Anode 2 TECHNOLOGY The planar passivated and standard ultrafast recovery SML 5 0 S U Z 0 3 JD diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML50SUZ03JD
OT-227
freewheeling diode 50A
diode H48
H100
SML50SUZ03JD
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rectifier diode 20 amp 800 volt
Abstract: 80 Amp current 100 volt diode 50 Amp 300 volt diode alternator diode 65 amp alternator diode RZ3524C rectifier diode pressfit zener alternator rectifier 400 amp 20 volt rectifier RZ2524C
Text: RZ2524C/A - 25 Amp RZ3524C/A - 35 Amp RZ5024C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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RZ2524C/A
RZ3524C/A
RZ5024C/A
SCD0725-3
rectifier diode 20 amp 800 volt
80 Amp current 100 volt diode
50 Amp 300 volt diode
alternator diode 65 amp
alternator diode
RZ3524C
rectifier diode pressfit
zener alternator rectifier
400 amp 20 volt rectifier
RZ2524C
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rectifier diode 20 amp 800 volt
Abstract: 3528 MR2528 MRL2528 MR3528 MR5028 MRL3528 50 Amp 300 volt diode MR502-8
Text: MR2528/MRL2528 - 25 Amp MR3528/MRL3528 - 35 Amp MR5028/MRL5028 - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Coloured ring denotes cathode Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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MR2528/MRL2528
MR3528/MRL3528
MR5028/MRL5028
MR2528/3528/5028
MRL2528/3528/5028
SCD0696-5
rectifier diode 20 amp 800 volt
3528
MR2528
MRL2528
MR3528
MR5028
MRL3528
50 Amp 300 volt diode
MR502-8
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alternator rectifier
Abstract: 100 Amp current 800 volt diode SCD0861-1 RZ2538A RZ2538C RZ3538A RZ3538C RZ5038A RZ5038C
Text: RZ2538C/A - 25 Amp RZ3538C/A - 35 Amp RZ5038C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection
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RZ2538C/A
RZ3538C/A
RZ5038C/A
31Volt
SCD0861-1
alternator rectifier
100 Amp current 800 volt diode
SCD0861-1
RZ2538A
RZ2538C
RZ3538A
RZ3538C
RZ5038A
RZ5038C
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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use igbt for 3 phase induction motor
Abstract: 3 phase brushless 400v
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
use igbt for 3 phase induction motor
3 phase brushless 400v
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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10 amp igbt 1000 volt
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
10 amp igbt 1000 volt
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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transistor c1417
Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components
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980nm)
100ppb
transistor c1417
TH-C1720-F6
THOMSON ELECTRONIQUES TUBES
c1417
Thomson-CSF semiconductor
c1417 transistor
TH-C1720
Thomson-CSF power laser diode price list
C5520
c5530
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TRS-4405S
Abstract: MD14 TRS-3605S TRS-4015S TRS-4805S TRS-5205S TRS-5405S IMD14 480 to-5
Text: 386972a GENERAL DIODE CDRP_ 07C 00252 D T-33-o GENERAL DIODE CORP ~ 0? D E | 3 f i b T ? S D 0 D Q 0 E S a 4 | SILICON NPN-Power Transistors TYPE NO. MAX. THERMAL RES. Junction to C u e * * re/ *) TRS-3M5S 17.5 MAX. ABSOLUTE MAX. RATINGS £ 2 5 ' C.
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386972a
0000E5H
TRS-3605S
MD-14
TRS-3742
MO-14
TRS-4015S
TRM3014
TRM3014S
TRM3504
TRS-4405S
MD14
TRS-4805S
TRS-5205S
TRS-5405S
IMD14
480 to-5
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MD14
Abstract: TRM6014 TRM6505 TRL2005 TRM5014S TRM5504 TRM6504 TRM7014 TRM8014 TRW201
Text: 3869720 GENERAL DIODE CORP '_ 07C 0 0 2 5 3_ D GENERAL DIODE CORP 07 DE |3ÛL.ci720 0000E53 b SILICON N P N -P o w e r Transistors TYPE NO. MAX. THERMAL RES. Junction lo Case 9,« MAX. COLL. DISS. in Fiee All 0 2 5 'C Pe ABSOLUTE MAX. RATINGS $ 2 5 'C.
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0000E53
TRM5014S
TRM5504
TRM6014
MD-14
TRM4015
TRM4015S
TRM4505
MD14
TRM6505
TRL2005
TRM6504
TRM7014
TRM8014
TRW201
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Untitled
Abstract: No abstract text available
Text: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw
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3B69720
07C00256
000055b
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T1IS
Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
Text: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.
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TRS-3204S
TRS-3604S
TRS-4014S
MO-14
TRS-5755
MD-14
TRS4015
TRS-6505
T1IS
60 amp 600 Volt Diode
2S05 Diode
TRS3015
MD14
TRS-4404S
TRS-5204S
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TRS601
Abstract: No abstract text available
Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors
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b17aD
TRS601
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2N3743
Abstract: 2N4930 2N4931 2N5096 2N5282
Text: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .
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-p-33
lcs50MA
trm7015
MD-14
trm7505
MO-14
trm8015
TRSP3014S
TRSP3504
TRSP3514S
2N3743
2N4930
2N4931
2N5096
2N5282
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