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    50 OHM MICROSTRIP LINE Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    BLM31SN500BH1L Murata Manufacturing Co Ltd FB SMD 1206inch 50ohm POWRTRN Visit Murata Manufacturing Co Ltd
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd

    50 OHM MICROSTRIP LINE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TUNNEL DIODE

    Abstract: 7700J "tunnel diode" tunnel detector tunnel diode high frequency
    Text: Modular Tunnel Diode Detectors 7700J Series V2.00 Mechanical Outline Top View Description The 7700J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging requirements.


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    7700J TUNNEL DIODE "tunnel diode" tunnel detector tunnel diode high frequency PDF

    ECUV1H150JCV

    Abstract: FR408 MMG3006NT1 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,


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    MMG3006NT1 MMG3006NT1 ECUV1H150JCV FR408 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 PDF

    MMG3014NT1

    Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3014NT1 MMG3014NT1 C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101 PDF

    Z5 1512

    Abstract: No abstract text available
    Text: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 Z5 1512 PDF

    135-869

    Abstract: ML200C MMG3003NT1 A113 A114 A115 AN1955 C0603C103J5RAC C101 hk160822nj
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 7, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3003NT1 MMG3003NT1 135-869 ML200C A113 A114 A115 AN1955 C0603C103J5RAC C101 hk160822nj PDF

    AVX 6295

    Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally


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    MMG3003NT1/D MMG3003NT1 MMG3003NT1 AVX 6295 239 avx ML200C A113 A114 A115 AN1955 A 118827 0805K680JBT PDF

    MMG3006N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,


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    MMG3006NT1 MMG3006NT1 MMG3006N PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally


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    MMG3003NT1/D MMG3003NT1 MMG3003NT1 MMG3003NT1/D PDF

    IPC 6012

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3003NT1 MMG3003NT1 IPC 6012 PDF

    154754

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3003NT1 MMG3003NT1 154754 PDF

    Z5 1512

    Abstract: C0805C209J5GAC
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 Z5 1512 C0805C209J5GAC PDF

    Z5 1512

    Abstract: ERJ-3GEY0R00V MMG3014NT1 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3014NT1 MMG3014NT1 Z5 1512 ERJ-3GEY0R00V 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range


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    MMG3003NT1 MMG3003NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,


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    MMG3006NT1 MMG3006NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    MMG3014NT1 MMG3014NT1 PDF

    M3111N

    Abstract: 22A114 irl 3710 m3111
    Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 4, 9/2012 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,


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    MMH3111NT1 M3111N 22A114 irl 3710 m3111 PDF

    Amplifier SOT-89 c4

    Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    MMG3003NT1 MMG3003NT1 Amplifier SOT-89 c4 ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87 PDF

    Untitled

    Abstract: No abstract text available
    Text: The receptacles shown below have .010" diameter contacts for good electrical transition to narrow microstrip lines. The reduced-diameter insulators are extended beyond the flange face to carry 50 ohm impedance through the microstrip package wall. All have captive contacts.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P co m p a n y Modular Biased Schottky Detectors 7709J Series V2.00 Mechanical Outline Top View Description The 7709J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal


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    7709J PDF

    7744J0020

    Abstract: 7744N
    Text: 7744J and 7 7 4 4 N Se rie s D escription The 7744J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEH stripline and microstrip media. These detectors are ideal components for dense packaging requirements. The 7744N series features additional circuit area for increased


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    7744J 7744N -20dBm. 7744J0020 PDF

    7700N

    Abstract: No abstract text available
    Text: 7700J and 7700N Series Description The 7700J series provides a minimized, hermetically seaJabie, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging requirements. The 7700N series features additional circuit area for increased RF-tovideo isolation typically greater than 21dB as well as space for


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    7700J 7700N 17dBm. -20dBm. PDF

    tunnel diode

    Abstract: tunnel diode high frequency tunnel diode specifications
    Text: M a n A M P c o m p an y Modular Tunnel Diode Detectors 7700J Series V2.00 Description Mechanical Outline Top View The 7700J series p rov id es a m inim ized, herm etically sealable, 50 ohm m odule design ed especially for TEM stripline and microstrip media. These detectors are ideal


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    7700J tunnel diode tunnel diode high frequency tunnel diode specifications PDF

    7715N

    Abstract: No abstract text available
    Text: 7715J and 7715N Series Description The 77I5J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media, these detectors make ideal components for dense packaging require­ ments. The 7715N series features additional circuit area for increased RFto-video isolation typically greater than 21 dB as well as space for


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    7715J 7715N 77I5J 50dBm -20dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: 7709J and 7709N Series Description The 7709J series provides a minimized, hermetically sealable, 50 ohm module designed especially for TEM stripline and microstrip media. These detectors are ideal components for dense packaging require­ ments. The 7709N series features additional circuit area for increased RF-tovideo isolation typically greater than 21dB as well as space for


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    7709J 7709N -15dBm 23dBm. -20dBm 21Continental PDF