2SD2642
Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max
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2SD2642
100max
110min
5000min
60typ
55typ
O220F)
2SB1687)
2SD2642
2SD2642 equivalent
2sb1687
FM20
transistor 2SB1687
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2SD2641
Abstract: 2SB1685
Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA
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2SD2641
2SB1685)
100max
110min
5000min
60typ
55typ
2SD2641
2SB1685
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2SD2560
Abstract: 2SB1647 DSA0016513
Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA
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2SD2560
2SB1647)
MT-100
100max
150min
5000min
70typ
120typ
2SD2560
2SB1647
DSA0016513
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2SB1570
Abstract: 2SD2401
Text: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)
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2SB1570
2SD2401)
100max
150min
5000min
50typ
230typ
2SB1570
2SD2401
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2SD2562
Abstract: 2sb1649
Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2SD2562
2SB1649)
FM100
100max
150min
5000min
70typ
120typ
2SD2562
2sb1649
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2SB1625
Abstract: 2SD2494
Text: 7 0 Ω E 2SB1625 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) –110 VEBO IC ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ IB –1
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2SB1625
2SD2494)
FM100
100max
110min
5000min
100typ
110typ
2SB1625
2SD2494
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2SD2642
Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686
Text: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗
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2SB1686
2SD2642)
100max
5000min
100typ
110typ
110min
O220F)
2SD2642
2SB1686
FM20
2SD2642 equivalent
transistor 2SB1686
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Untitled
Abstract: No abstract text available
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
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2SD2589
100max
110min
5000min
60typ
55typ
2SB1659)
FM-25
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2SD2439
Abstract: 2SB1588
Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA
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2SD2439
2SB1588)
FM100
100max
150min
5000min
55typ
95typ
2SD2439
2SB1588
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2SD2390
Abstract: 2SB1560
Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max
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2SD2390
2SB1560)
MT-100
100max
150min
5000min
55typ
95typ
2SD2390
2SB1560
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2SD2560
Abstract: 2SB1647 2sd25
Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)
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2SD2560
2SB1647)
100max
150min
5000min
70typ
120typ
MT-100
2SD2560
2SB1647
2sd25
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2sd2495 equivalent
Abstract: 2SD2495 2SB1626 FM20
Text: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A
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2SD2495
100max
110min
5000min
60typ
55typ
O220F)
2sd2495 equivalent
2SD2495
2SB1626
FM20
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2SD2562
Abstract: 2SD256 2sb1649
Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C
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2SD2562
2SB1649)
FM100
100max
150min
5000min
70typ
120typ
2SD2562
2SD256
2sb1649
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2SB1560
Abstract: 2SD2390 DSA0016506
Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB
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2SB1560
2SD2390)
MT-100
100max
150min
5000min
50typ
2SB1560
2SD2390
DSA0016506
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2SB1647
Abstract: 2SD2560 DSA0016506
Text: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA
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2SB1647
2SD2560)
100max
150min
5000min
45typ
320typ
MT-100
2SB1647
2SD2560
DSA0016506
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transistor 2SD2389
Abstract: 2SD2389 2SB1559
Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2SD2389
2SB1559)
MT-100
100max
150min
5000min
transistor 2SD2389
2SD2389
2SB1559
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2SB1560
Abstract: 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560
Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) 2SB1560 Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB
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2SB1560
2SD2390)
MT-100
100max
150min
5000min
50typ
2SB1560
2SD2390 equivalent
2SD2390
Silicon Pnp Epitaxial Planar Transistor
2sb15
Sanken Electric 2SB1560
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PDF
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2SB1647
Abstract: 2SD2560 2SD256
Text: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA
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2SB1647
2SD2560)
100max
5000min
45typ
320typ
150min
2SB1647
2SD2560
2SD256
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IE5A
Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
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2SD2589
2SB1659)
FM-25
100max
110min
5000min
60typ
55typ
IE5A
Transistor 2Sd2589
2SD2589
2SB1659
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PDF
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2SB1648
Abstract: 2SD2561 2sd25
Text: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB
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2SD2561
2SB1648)
100max
150min
5000min
70typ
120typ
MT-200
2SB1648
2SD2561
2sd25
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PDF
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transistor 2sb1624 2sd2493
Abstract: 2SB1624 2SD2493
Text: 7 0 Ω E 2SB1624 VCEO –110 VEBO –5 IC –6 IB –1 PC Tj Unit ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA V V(BR)CEO IC=–30mA –110min V A hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C)
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2SB1624
MT-100
100max
110min
5000min
100typ
110typ
transistor 2sb1624 2sd2493
2SB1624
2SD2493
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PDF
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Untitled
Abstract: No abstract text available
Text: r Pin 1 \ □ □ □ □ □ □ □ □ □ MATERIAL 2.00 Insulator : 30% Glass fib e r PBT C o n ta ct Pin : Brass SPECIFICATION C urrent Rate : 1 AMP Insulation Resistance : 5000MiJMin. a t DC 500V C o n ta ct Resistance : 20m flM ax. a t DC 100m A D ielectric Voltage : AC 500V fo r one m inute
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OCR Scan
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5000MiJMin.
M-R126-lXxx
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PDF
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Untitled
Abstract: No abstract text available
Text: |— 2.50 MATERIAL Insulator : 30% Glass fiber PBT Contact Pin : Brass Pin 1 SPECIFICATION Current Rate : 3 AMP Insulation Resistance : 5000MilMin. at DC 500V Contact Resistance : 20mQMax. a t DC 100mA Dielectric Voltage : AC 500V fo r one m inute Operation Temperature : — 40'C to + 105’C
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OCR Scan
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5000MiMn.
20m0Max.
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: NOTES: 1 .MATERIALS 1.1 lnsulator:PBT 3 0 % Glass Fiber U L - 9 4 V - 0 1.2 Contact: Brass, Tin Plated 1.3 Spring Tole: Nickel Plated 2.SPECIFICATI0NS 2.1 Current Rating: 1Amp 2.2 Dielectric Strength: AC 1000V/min.R.M.S. 2.3 Insulator Resistance: 5000Milm in. at 500V DC
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OCR Scan
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000V/min
5000Milm
DJ-MS-05
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PDF
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