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    Fluke Networks GLD-DSX-5000MI

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    Fluke Corporation GLD-DSX-5000MI

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    5000MI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2642

    Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
    Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max


    Original     		PDF 2SD2642 100max 110min 5000min 60typ 55typ O220F) 2SB1687) 2SD2642 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687

    2SD2641

    Abstract: 2SB1685
    Text: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2641 2SB1685) 100max 110min 5000min 60typ 55typ 2SD2641 2SB1685

    2SD2560

    Abstract: 2SB1647 DSA0016513
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA


    Original     		PDF 2SD2560 2SB1647) MT-100 100max 150min 5000min 70typ 120typ 2SD2560 2SB1647 DSA0016513

    2SB1570

    Abstract: 2SD2401
    Text: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)


    Original     		PDF 2SB1570 2SD2401) 100max 150min 5000min 50typ 230typ 2SB1570 2SD2401

    2SD2562

    Abstract: 2sb1649
    Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original     		PDF 2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2sb1649

    2SB1625

    Abstract: 2SD2494
    Text: 7 0 Ω E 2SB1625 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) –110 VEBO IC ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ IB –1


    Original     		PDF 2SB1625 2SD2494) FM100 100max 110min 5000min 100typ 110typ 2SB1625 2SD2494

    2SD2642

    Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686
    Text: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗


    Original     		PDF 2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686

    Untitled

    Abstract: No abstract text available
    Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2589 100max 110min 5000min 60typ 55typ 2SB1659) FM-25

    2SD2439

    Abstract: 2SB1588
    Text: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA


    Original     		PDF 2SD2439 2SB1588) FM100 100max 150min 5000min 55typ 95typ 2SD2439 2SB1588

    2SD2390

    Abstract: 2SB1560
    Text: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max


    Original     		PDF 2SD2390 2SB1560) MT-100 100max 150min 5000min 55typ 95typ 2SD2390 2SB1560

    2SD2560

    Abstract: 2SB1647 2sd25
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)


    Original     		PDF 2SD2560 2SB1647) 100max 150min 5000min 70typ 120typ MT-100 2SD2560 2SB1647 2sd25

    2sd2495 equivalent

    Abstract: 2SD2495 2SB1626 FM20
    Text: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A


    Original     		PDF 2SD2495 100max 110min 5000min 60typ 55typ O220F) 2sd2495 equivalent 2SD2495 2SB1626 FM20

    2SD2562

    Abstract: 2SD256 2sb1649
    Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original     		PDF 2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2SD256 2sb1649

    2SB1560

    Abstract: 2SD2390 DSA0016506
    Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB


    Original     		PDF 2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 DSA0016506

    2SB1647

    Abstract: 2SD2560 DSA0016506
    Text: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA


    Original     		PDF 2SB1647 2SD2560) 100max 150min 5000min 45typ 320typ MT-100 2SB1647 2SD2560 DSA0016506

    transistor 2SD2389

    Abstract: 2SD2389 2SB1559
    Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max


    Original     		PDF 2SD2389 2SB1559) MT-100 100max 150min 5000min transistor 2SD2389 2SD2389 2SB1559

    2SB1560

    Abstract: 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560
    Text: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) 2SB1560 Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB


    Original     		PDF 2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560

    2SB1647

    Abstract: 2SD2560 2SD256
    Text: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA


    Original     		PDF 2SB1647 2SD2560) 100max 5000min 45typ 320typ 150min 2SB1647 2SD2560 2SD256

    IE5A

    Abstract: Transistor 2Sd2589 2SD2589 2SB1659
    Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA


    Original     		PDF 2SD2589 2SB1659) FM-25 100max 110min 5000min 60typ 55typ IE5A Transistor 2Sd2589 2SD2589 2SB1659

    2SB1648

    Abstract: 2SD2561 2sd25
    Text: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB


    Original     		PDF 2SD2561 2SB1648) 100max 150min 5000min 70typ 120typ MT-200 2SB1648 2SD2561 2sd25

    transistor 2sb1624 2sd2493

    Abstract: 2SB1624 2SD2493
    Text: 7 0 Ω E 2SB1624 VCEO –110 VEBO –5 IC –6 IB –1 PC Tj Unit ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA V V(BR)CEO IC=–30mA –110min V A hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C)


    Original     		PDF 2SB1624 MT-100 100max 110min 5000min 100typ 110typ transistor 2sb1624 2sd2493 2SB1624 2SD2493

    Untitled

    Abstract: No abstract text available
    Text: r Pin 1 \ □ □ □ □ □ □ □ □ □ MATERIAL 2.00 Insulator : 30% Glass fib e r PBT C o n ta ct Pin : Brass SPECIFICATION C urrent Rate : 1 AMP Insulation Resistance : 5000MiJMin. a t DC 500V C o n ta ct Resistance : 20m flM ax. a t DC 100m A D ielectric Voltage : AC 500V fo r one m inute


    OCR Scan     		PDF 5000MiJMin. M-R126-lXxx

    Untitled

    Abstract: No abstract text available
    Text: |— 2.50 MATERIAL Insulator : 30% Glass fiber PBT Contact Pin : Brass Pin 1 SPECIFICATION Current Rate : 3 AMP Insulation Resistance : 5000MilMin. at DC 500V Contact Resistance : 20mQMax. a t DC 100mA Dielectric Voltage : AC 500V fo r one m inute Operation Temperature : — 40'C to + 105’C


    OCR Scan     		PDF 5000MiMn. 20m0Max. 100mA

    Untitled

    Abstract: No abstract text available
    Text: NOTES: 1 .MATERIALS 1.1 lnsulator:PBT 3 0 % Glass Fiber U L - 9 4 V - 0 1.2 Contact: Brass, Tin Plated 1.3 Spring Tole: Nickel Plated 2.SPECIFICATI0NS 2.1 Current Rating: 1Amp 2.2 Dielectric Strength: AC 1000V/min.R.M.S. 2.3 Insulator Resistance: 5000Milm in. at 500V DC


    OCR Scan     		PDF 000V/min 5000Milm DJ-MS-05