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    500MW 5V TRANSISTOR Search Results

    500MW 5V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    500MW 5V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX4365EGA

    Abstract: 1k 1w MAX4364 MAX4364ESA MAX4365 MAX4365EUA LM4864 LM4862
    Text: 19-2387; Rev 0; 7/02 1.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown Features The MAX4364/MAX4365 are bridged audio power amplifiers intended for portable audio devices with internal speakers. The MAX4364 is capable of delivering 1.4W from a single 5V supply and 500mW from a


    Original     		PDF MAX4364/MAX4365 MAX4364 500mW MAX4365 450mW 217Hz MAX4364/MAX4365 MAX4365EGA 1k 1w MAX4364ESA MAX4365EUA LM4864 LM4862

    MAX4364

    Abstract: MAX4364ESA MAX4365 MAX4365ETA MAX4365EUA
    Text: 19-2387; Rev 2; 5/04 1.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown The MAX4364/MAX4365 are bridged audio power amplifiers intended for portable audio devices with internal speakers. The MAX4364 is capable of delivering 1.4W from a single 5V supply and 500mW from a


    Original     		PDF MAX4364/MAX4365 MAX4364 500mW MAX4365 450mW 217Hz, MAX4364/MAX4365 MAX4364ESA MAX4365ETA MAX4365EUA

    0.5w audio amplifier circuit diagram

    Abstract: MAX4364 MAX4364ESA MAX4365 MAX4365ETA MAX4365EUA
    Text: 19-2387; Rev 3; 11/05 1.4W and 1W, Ultra-Small, Audio Power Amplifiers with Shutdown The MAX4364/MAX4365 are bridged audio power amplifiers intended for portable audio devices with internal speakers. The MAX4364 is capable of delivering 1.4W from a single 5V supply and 500mW from a


    Original     		PDF MAX4364/MAX4365 MAX4364 500mW MAX4365 450mW 217Hz, MAX4364/MAX4365 0.5w audio amplifier circuit diagram MAX4364ESA MAX4365ETA MAX4365EUA

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    ic 4446

    Abstract: ZUMT591 SOT323 2222 transistor b 622
    Text: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*


    Original     		PDF OT323 ZUMT591 -500mA, 500mW -50mA, 100MHz OT323 -50mA* ic 4446 ZUMT591 SOT323 2222 transistor b 622

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)

    H558

    Abstract: 500mW 5v transistor
    Text: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H558 █ APPLICATIONS SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃


    Original     		PDF 500mW -100mA -10mA, -100mA, -10mA -10mA H558 500mW 5v transistor

    H557

    Abstract: No abstract text available
    Text: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H557 █ APPLICATIONS SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃


    Original     		PDF 500mW -100mA -100AIC -10mA, -100mA, -10mA -10mA H557

    2N2222

    Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
    Text: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


    OCR Scan     		PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le 2N2222 power

    FN2222A

    Abstract: RT2222
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


    OCR Scan     		PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907, FN2222A RT2222

    2N2222

    Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
    Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.


    OCR Scan     		PDF 2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222

    2N2907

    Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
    Text: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.


    OCR Scan     		PDF 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2907A 2N2907 PN2907 pn2222 2n2222 2N2222 2N2222A PN2222 pn2907 2n2907

    2N2906

    Abstract: 2N2906A PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PN2906A
    Text: 2N2906 • 2N2906A PN 2906 ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPESI-' SWITCHING APPLICATIONS. THEY ARE


    OCR Scan     		PDF 2N290Ã 2N2906A PN2906A 2N2906, 2N2906A, PN2906, COMPLEMEN171ARY 2N2221 2N2221A, 2N2906 PN2221 2N2221 2N2221A 2N290 PN2221A PN2906

    2N2907

    Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
    Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


    OCR Scan     		PDF 2N2907A PN2907A 2N2907, 2N2907A, PN2907, 2N2222, 2N2222A, PN2222, PN2222A 2N2907 PN2907 J 2N2907 2N2222 2N2222A PN2222 PNP pN2907

    2n2906

    Abstract: PN2221 PN2906A 2N2221A 2N2906A PN2906
    Text: 2N 2906 PN 2906 • 2N2906A ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES J CASE TO-18 CASE T0-92A Ä CBE EBC 2N290ë 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM


    OCR Scan     		PDF 2N2906 2N2906A PN2906A 2n2906, 2n2906a, pn2906, pn2906a 2n2221 2N2221A, PN2221, 2n2906 PN2221 2N2221A PN2906

    Untitled

    Abstract: No abstract text available
    Text: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE


    OCR Scan     		PDF 2N2906A PN2906A 2TT2906, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221 PN2221A

    2N2901

    Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
    Text: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


    OCR Scan     		PDF 2N2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2901 npn 2907a EBC 2N2907 FN2907 PH2907 2N2222 2N2907A LB-15N PN2907

    Untitled

    Abstract: No abstract text available
    Text: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.


    OCR Scan     		PDF PN2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A

    2N5448

    Abstract: No abstract text available
    Text: 2N5448 R PNP SILICON TRANSISTOR DESCRIPTION TQ-92F 2N5448(R) is PNP silicon planar transistor for general purpose medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage V ceo 30V Collector-Base Voltage V cbo 50V Emitter-Base Voltage


    OCR Scan     		PDF 2N5448 O-92F 200mA 500mW 100fiA 300jiS,

    500mW 5v transistor

    Abstract: No abstract text available
    Text: DESCRIPTION CRO 2N5448 R PNP SILICON TRANSISTOR 2N5448(R) is PNP silicon planar transistor for general purpose medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2N5448 200mA 500mW 100jxA 300jiS, 4351Q 500mW 5v transistor

    Untitled

    Abstract: No abstract text available
    Text: TPA0103 3-CHANNEL AUDIO POWER AMPLIFIER STEREO SINGLE-ENDED 500-mW AND MONO BTL 1.75 W SLOS16 7 -JU LY 1997 • Desktop Computer Amplifier Solution - 1.75-W Bridge Tied Load BTL Center Channel - 500-mW L/R Single-Ended Channels • Low Distortion Output


    OCR Scan     		PDF TPA0103 500-mW SLOS16 24-Pin