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    500V 25A MOSFET Search Results

    500V 25A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N5012P-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 25A 225Mohm To-3P Visit Renesas Electronics Corporation
    RJK5015DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 500V 25A 240Mohm To-3P Visit Renesas Electronics Corporation
    RJK5015DPM-00#T1 Renesas Electronics Corporation Nch Single Power Mosfet 500V 25A 240Mohm To-3Pfm Visit Renesas Electronics Corporation
    H5N5007P-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 25A 225Mohm To-3P Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    500V 25A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


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    IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


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    IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3 PDF

    IXFR44N50Q3

    Abstract: 44N50Q3
    Text: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


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    IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3 IXFR44N50Q3 PDF

    APT5017

    Abstract: APT5017HLL
    Text: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT5017HLL O-258 O-258 APT5017 APT5017HLL PDF

    IRFY420C

    Abstract: No abstract text available
    Text: IRFY420C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)


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    IRFY420C O257AB O257AB O220M) 13-Sep-02 IRFY420C PDF

    4200pF

    Abstract: IRFY420
    Text: IRFY420 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)


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    IRFY420 O257AB O257AB O220M) 13-Sep-02 4200pF IRFY420 PDF

    APT0406

    Abstract: APT0502
    Text: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    APTM50H15FT1G APT0406 APT0502 PDF

    APT0406

    Abstract: APT0502
    Text: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies


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    APTM50A15FT1G APT0406 APT0502 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies


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    APTM50A15FT1G PDF

    APT0406

    Abstract: APT0502
    Text: APTM50A15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies


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    APTM50A15UT1G APT0406 APT0502 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 2 5 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    APTM50H15FT1G PDF

    APT0406

    Abstract: APT0502
    Text: APTM50H15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


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    APTM50H15UT1G APT0406 APT0502 PDF

    500V 25A Mosfet

    Abstract: by-pass
    Text: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is coupled with a blocking Schottky diode to the drain


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    16-pin 500V 25A Mosfet by-pass PDF

    500V 25A Mosfet

    Abstract: 2000 PWM hybrid
    Text: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 2 16 2947 1 60 S -2 YY ERN 70 WW O MA XX DE XX IN B e U. S.A O . DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is


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    16-pin 500V 25A Mosfet 2000 PWM hybrid PDF

    500V 25A Mosfet

    Abstract: FBA50CA50 "MOSFET Module" FBA50CA45 B220G mosfet 500V 50A
    Text: MOSFET MODULE FBA50CA45/50 UL;E76102 M FBA50CA45/50 is a dual power MOSFET module designed for fast swiching 2 devices are serial connected. The applications of high voltage and current. mounting base of the module is electrically isolated from semiconductor elements for


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    FBA50CA45/50 E76102 FBA50CA45/50 700ns FBA50CA45 FBA50CA50 500V 25A Mosfet FBA50CA50 "MOSFET Module" B220G mosfet 500V 50A PDF

    FCA50CC50

    Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
    Text: MOSFET MODULE FCA50CC50 UL;E76102 (M) FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50msec10sec 50sec50msec RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506 PDF

    FBA50CA45

    Abstract: FBA50CA50
    Text: MOSFET MODULE FBA50CA45/50 UL;E76102 (M) FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for


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    FBA50CA45/50 E76102 FBA50CA45/50 VDSS500V 31max 30max FBA50CA50 FBA50CA45 FBA50CA50 PDF

    FCA50CC50

    Abstract: IG2U
    Text: MOSFET MODULE FCA50CC50 UL;E76102 (M) FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the


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    FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50sec-10sec 50msec-10sec 00A/s IG2U PDF

    "MOSFET Module"

    Abstract: FBA50CA50 FBA50CA45
    Text: MOSFET MODULE FBA50CA45/50 UL;E76102 (M) FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for


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    FBA50CA45/50 E76102 FBA50CA45/50 VDSS500V 31max 30max "MOSFET Module" FBA50CA50 FBA50CA45 PDF

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE MICROELECTRONICS 47E D • 0^10103 0000L21 fl3fl ■ TEH TELEDYNE MICROELECTRONICS Power Hybrid, Full Bridge P/N 2294760 DESCRIPTION The 2294760 Power Hybrid contains four N-Channel Enhancement mode high voltage power MOSFETS. Each is coupled with a blocking Schottky diode on the drain and a


    OCR Scan
    0000L21 16-pin PDF

    500V 25A Mosfet

    Abstract: IRFV420 IRFY420
    Text: bOE D m Ô1331Ô7 OODOSbO 55^ •SMLB SEMELAB PLC { SEMELAB IRFY420 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS □r ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan
    T0220 T0220M T0220SM 300/is, LE174JB 500V 25A Mosfet IRFV420 IRFY420 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE FCA50CC50 UL;E76102 M F C A 5 0 C C 5 0 is a dual power M O S F E T module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink con­


    OCR Scan
    FCA50CC50 E76102 100ns 7T11E43 DDD1117 PDF

    FCA50BC50

    Abstract: 500V 25A Mosfet
    Text: MOSFET MODULE FCA50BC50 U L ;E 76102 M F C A 5 0 B C 5 0 is a dual power MOSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is elecjtjcally isolated from semiconductor elements for simple h g atsl^cp o n struction.


    OCR Scan
    FCA50BC50 FCA50BC50 100ns E76102 50mse 000EE33 500V 25A Mosfet PDF

    12v transformer

    Abstract: No abstract text available
    Text: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    FRF150D, FRF150R, FRF150H O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRI50UIS 12v transformer PDF