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    500V P CHANNEL MOSFET Search Results

    500V P CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    500V P CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    400v p-channel mosfet

    Abstract: No abstract text available
    Text: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50TM -500V, 400v p-channel mosfet

    FQD3P50TM_F085

    Abstract: No abstract text available
    Text: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50TM -500V, FQD3P50TM_F085

    to-247 to-220 to-3p

    Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
    Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective


    Original     		PDF -100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P

    FQD1P50

    Abstract: FQU1P50
    Text: QFET FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    FQD1P50

    Abstract: FQU1P50
    Text: FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    FQPF1P50

    Abstract: No abstract text available
    Text: QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQPF1P50 -500V, FQPF1P50

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


    Original     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA

    FQD1P50

    Abstract: FQU1P50
    Text: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD1P50 FQU1P50 -500V, FQU1P50

    P-CHANNEL 400V 15A

    Abstract: fqb1p50
    Text: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQI1P50TU O-262 P-CHANNEL 400V 15A

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50

    FQB1P50

    Abstract: FQI1P50
    Text: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQI1P50

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD1P50 FQU1P50 -500V, FQD1P50TM O-252 FQD1P50TF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50

    GS 069

    Abstract: FQB1P50 FQI1P50
    Text: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 GS 069 FQI1P50

    Untitled

    Abstract: No abstract text available
    Text: FQP3P50 August 2000 QFET FQP3P50 TM 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3P50 -500V,

    FQD3P50

    Abstract: FQU3P50
    Text: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50 FQU3P50 -500V, FQU3P50

    Untitled

    Abstract: No abstract text available
    Text: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50 FQU3P50 -500V, FQU3P50TU O-251 FQU3P50

    Untitled

    Abstract: No abstract text available
    Text: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3P50 FQI3P50 -500V, FQI3P50TU O-262 FQI3P50

    Untitled

    Abstract: No abstract text available
    Text: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD3P50 FQU3P50 -500V, FQD3P50TF O-252 FQD3P50TM

    fqp3p50

    Abstract: No abstract text available
    Text: FQP3P50 August 2000 QFET TM FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3P50 -500V, fqp3p50

    FQP1P50

    Abstract: No abstract text available
    Text: FQP1P50 June 2000 QFET TM FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP1P50 -500V, FQP1P50

    Untitled

    Abstract: No abstract text available
    Text: FQPF1P50 June 2000 QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF1P50 -500V,

    FQB3P50

    Abstract: FQI3P50
    Text: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3P50 FQI3P50 -500V, FQI3P50

    Untitled

    Abstract: No abstract text available
    Text: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB3P50 FQI3P50 -500V, FQB3P50TM O-263