High-Power NPN Silicon Power Transistor 50A
Abstract: A13 transistor 0504336
Text: ALL E GR O MICROSYSTEMS INC 13 D • []50433fl D D G 3 b ö T 1 ■ AL6R T-91-01 PROCESS FBB Process FBB NPN High-Power Transistor Process F B B is a double-diffused epitaxial planar N P N silicon device. It is designed for use in power amplifier and switching circuits.
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T-91-01
0090sq.
T-91-01
High-Power NPN Silicon Power Transistor 50A
A13 transistor
0504336
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Untitled
Abstract: No abstract text available
Text: 2879 QUAD HIGH-CURRENT DARLINGTON SWITCHES These quad Darlington arrays are designed to serve as interface between low-level logic and peripheral power devices such as sole noids, motors, incandescent displays, heaters, and similar loads of up to 320 W per channel. Both integrated circuits include transientsuppression diodes that enable use with inductive loads. The input
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UDN2878W
UDN2879W
UDN2879W-2
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Untitled
Abstract: No abstract text available
Text: I I _ Data Sheet 27695* 5 40 PROTECTED P owerH all SENSOR LAMP/SOLENOID D RIVER — The U GQ5140K unipolar Hall effect switch is a monolithic integrated circuit designed for magnetic actuation of low-power incandescent lamps or inductive loads such as relays or solenoids.
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GQ5140K
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Untitled
Abstract: No abstract text available
Text: BiMOS n 8-BIT LATCHED SOURCE DRIVERS Designed primarily for use with high-voltage vacuum-fluorescent displays, the UCN5815A and UCN5815EP BiMOS II integrated circuits consist of eight NPN Darlington source drivers with output pull-down resistors, a CMOS latch for each driver, and common STROBE,
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UCN5815A
UCN5815EP
UCN5815A
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Untitled
Abstract: No abstract text available
Text: Ä Data Sheet 26186.20 i S i i ADDRESSABLE 28-U N E DECODER/DRiVER Intended for use in ink-jet printer applications, the A5817SEP addressable 28-line decoder/driver combines low-power CMQflynputs and logic with 28 high-current, high-voltage bipolar o u tp u ^^^tlfe H 4
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A5817SEP
28-line
gfeacl14-driver
0SD433Ã
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