transistor NEC D 587
Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage
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2SC4885
transistor NEC D 587
transistor NEC D 986
R13* MARKING
TC-2365
marking R13
2SC4885
741 vtvm
230 624 533 392
P10410EJ2V0DS00
transistor NEC D 586
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510H
Abstract: 511H 512H 524H 525H RJ24J3AA0PT
Text: BACK RJ24J3AA0PT 1/3.2-type Interline Color CCD Area Sensors with 1 310 k Pixels RJ24J3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type (5.60 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With
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RJ24J3AA0PT
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P-DIP016-0500C)
RJ24J3AA0PT
510H
511H
512H
524H
525H
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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low noise transistors bc638
Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
low noise transistors bc638
BC548
MPS5172 "cross-reference"
BC237
LOW NOISE BC638
BC449 "cross-reference"
bc307b
DTC114E SERIES
2N6520 DIODES
MPF4856
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sot-363 702
Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Text: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
sot-363 702
MPS5172 "cross-reference"
BC237
BC307
MMVL3700T1
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NEC D 586
Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FE3A
Abstract: H8S/2110 h8s-2110b TF256
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
FE3A
H8S/2110
h8s-2110b
TF256
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
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LTspice
Abstract: 23/zoom 505 schematic
Text: M A NU A L , M E T HO D S A ND A P P L I CAT I O N S SIMULATOR THE LTSPICE IV THE LTSPICE IV 1st edition Swiridoff Verlag ISBN: 978-3-89929-258-9 SIMULATOR GILLES BROCARD MANUAL, METHODS AND APPLICATIONS Preface by Mike Engelhardt 1st edition Preface It is an honor to write a preface for Gilles Brocard. I appreciate his work writing this book and hope you benefit from
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A502C
Abstract: A504C TTL 555 a529
Text: fl MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortransistor logic designed for general purpose digital applica tions. The family has a medium operating speed 20 MHz clock rate , good e xternal noise
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CA521
Abstract: 576/C
Text: MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortra n s is to r logic d e sign e d for general purpose digital applica tions. The family has a medium operating speed 20 MHz clock ra te , go o d e x te rn a l n o ise
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
CA521
576/C
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TC236
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
CO193
TC236
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Value Supply Voltage - Continuous SUHL/TTL +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V.n +5.5 Vdc Output Voltage - Vout +5.5 Vdc Operating Temperature Range -55 t o +125 °C Storage Temperature Range -65 t o +150 °c Maximum Junction Temperature
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
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LA 4301
Abstract: No abstract text available
Text: LA N S D A L E S E M I C O N D U C T O R 32E D • £3^003 O O O G B M R T ■ LTE T-43-01 MAXIMUM RATINGS Rating Value +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V ln +5.5 Vdc Output Voltage - Voul +5.5 Vdc Operating Temperature Range -55 to +125 °C Storage Temperature Range
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T-43-01
14-LEAD
16-LEAD
10-LEAD
24-LEAD
LA 4301
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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ov 780 image
Abstract: 160i 510H 511H 512H 524H 525H LZ23J3N
Text: SHARP SPEC No. ISSUE: C C 1 0 5 0 0 3 May. 28 1998 To ; PRELIM I NARY SPECIFICATIONS Product Type 1/2. 7-type 6. 72mm Interline Color CCD Area Sensor with 1310k Pixels Model No. LZ2 3 J 3N ^This specifications contains 27 pages including the cover and appendix.
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CC105003
1310k
LZ23J3N
ov 780 image
160i
510H
511H
512H
524H
525H
LZ23J3N
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transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •
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2SC5012
2SC5012-T1
2SC5012-T2
transistor NEC D 882 p
transistor NEC b 882 p
transistor NEC 882 p
transistor NEC b 882
nec d 882 p transistor
nec 358 amplifier
transistor NEC D 587
34077
6069 marking
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Untitled
Abstract: No abstract text available
Text: PACKAGING CODES STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 51 Bulk 2 3 4 4A 4B 4C 4D 5 52 53 54 D O -2 1 4 /2 1 5 A A SM B , 12m m Tape, 7" D iam eter Plastic Reel 26m m Horizontal Taping and Am m o Box Packing 52.4m m Horizontal Tape, 13” D iam eter P aper R eel C lass I
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REMA
Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die
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Param24
52/PS
REMA
granat 216
Sonneberg
DIODE ga
TESLA transistor
Kombinat VEB A 301
transistor KF 507
tesla 516
maa 550
service-mitteilungen
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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FZK101
Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974
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Grou19
CN127-128-638
ZN220-320.
CN131-132-642.
ZN221-321.
CN133-134-644.
ZN248-348.
CN135-136-646
ZN222-322.
CN121-122-682.
FZK101
FZK105
upd101
SNF10
SN76131
TAA700
FZH111
FZJ101
MFC8010
MFC8001
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