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Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN3 CASE 506AU−01 ISSUE O DATE 20 SEP 2005 1 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
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506AU-01
506AU
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NSS20500UW3T2G
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
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NSS40500UW3T2G
Abstract: No abstract text available
Text: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40500UW3T2G
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Untitled
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
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Untitled
Abstract: No abstract text available
Text: NSS40500UW3T2G 40 V, 5.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40500UW3T2G
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WDFN3
Abstract: NSS20501UW3T2G
Text: NSS20501UW3T2G 20 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20501UW3T2G
NSS20501UW3/D
WDFN3
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Untitled
Abstract: No abstract text available
Text: NSS40501UW3T2G 40 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40501UW3T2G
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NSS20500UW3T2G
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
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Untitled
Abstract: No abstract text available
Text: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS12500UW3T2G
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WDFN3
Abstract: NSS12100UW3TCG WDFN3 NSS12100UW3TCG
Text: NSS12100UW3TCG 12 V, 1 A, Low VCE sat PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS12100UW3TCG
NSS12100UW3/D
WDFN3
NSS12100UW3TCG
WDFN3 NSS12100UW3TCG
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WDFN3
Abstract: D33X
Text: NSS20500UW3 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3
NSS20500UW3/D
WDFN3
D33X
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NSS20500UW3T2G
Abstract: No abstract text available
Text: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20500UW3T2G
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Untitled
Abstract: No abstract text available
Text: NSS20501UW3T2G 20 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS20501UW3T2G
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Untitled
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Text: NSS40501UW3, NSV40501UW3 40 V, 5.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These
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NSS40501UW3,
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NSS12501UW3T2G
Abstract: No abstract text available
Text: NSS12501UW3T2G 12 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS12501UW3T2G
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2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital
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SG388/D
2N6284 inverter schematic diagram
NTD18N06
MKP9V160
sine wave inverter tl494 circuit diagram
ECL IC NAND
adp3121
DARLINGTON TRANSISTOR ARRAY
ezairo
MC74HC4538
TIP142 6403 F
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Untitled
Abstract: No abstract text available
Text: NSS12501UW3T2G 12 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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WDFN3
Abstract: NSS40500UW3T2G
Text: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS40500UW3T2G
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NSS12500UW3T2G
Abstract: No abstract text available
Text: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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NSS12500UW3T2G
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NSS12500UW3T2G
Abstract: No abstract text available
Text: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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Untitled
Abstract: No abstract text available
Text: NSS40501UW3T2G 40 V, 5.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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STP4119
Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices
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STP4119
Full-bridge SG3525 APPLICATION NOTES
sg3525 application note
mc34063 step up with mosfet
mc34063 step down with mosfet
Full-bridge SG3525
sg3525 pwm INVERTER
MJ2955 300 watts amplifier circuit diagram
MT3336
sg3535a
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Untitled
Abstract: No abstract text available
Text: NSS20501UW3 20 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications
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IGBT 60A spice model
Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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September-2006
IGBT 60A spice model
8 pin ic 3842
motorola an569 thermal
IR 948P
0.65mm pitch BGA socket
bt 2323
DFN 3.3X3.3
HTC Korea
SPICE thyristor model
527 MOSFET TRANSISTOR motorola
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