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    5089 NPN Search Results

    5089 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    5089 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KST5088

    Abstract: KST5089 MARK 5D SOT
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


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    PDF KST5088/5089 OT-23 KST5088 KST5089 100ner KST5088 KST5089 MARK 5D SOT

    KST5088

    Abstract: KST5089
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


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    PDF KST5088/5089 OT-23 KST5088 KST5089 100ner KST5088 KST5089

    sot-23 Marking 3D

    Abstract: KST5088 KST5089 5089 silicon npn transistor transistor 5d
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 2 1 SOT-23 NPN Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


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    PDF KST5088/5089 OT-23 KST5088 KST5089 sot-23 Marking 3D KST5088 KST5089 5089 silicon npn transistor transistor 5d

    MARKING 5D NPN

    Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


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    PDF KST5088/5089 OT-23 KST5088 KST5089 MARKING 5D NPN MARK 5D SOT sot-23 Marking 3D

    100khz 5v transistor npn

    Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


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    PDF KST5088/5089 OT-23 KST5088 KST5089 100khz 5v transistor npn 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF

    dual sot363

    Abstract: CMKT5089M10 C9M0
    Text: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is


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    PDF CMKT5089M10 OT-363 CMKT5089M10 21-November dual sot363 C9M0

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2N5088/5089 2N5088: 2N5089: 625mW 2N5088 2N5089 2N5088 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent

    Untitled

    Abstract: No abstract text available
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage : KST5088 : KST5089 Collector-Emitter Voltage : KST5088 : KST5089 Emitter-Base Voltage Collector Current


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    PDF KST5088/5089 OT-23 KST5088 KST5089

    Untitled

    Abstract: No abstract text available
    Text: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two 2 individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini device is manufactured by the epitaxial


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    PDF CMKT5089M10 OT-363 CMKT5089M10 OT-363 13-January

    MAX17122

    Abstract: max17122etl GRM32ER61E226M IC power 22A Regulator switching regulator 12v MAX17122e tv lcd Schematic Power Supply using mosfet tv lcd Schematic Power Supply schematic 12v 3a power supply without transistor and ic TOSHIBA TV IC regulator
    Text: 19-5089; Rev 0; 12/09 MAX17122 Evaluation Kit The MAX17122 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for thin-film transistor (TFT), liquidcrystal display (LCD) TV panels. The EV kit includes a


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    PDF MAX17122 MAX17122 max17122etl GRM32ER61E226M IC power 22A Regulator switching regulator 12v MAX17122e tv lcd Schematic Power Supply using mosfet tv lcd Schematic Power Supply schematic 12v 3a power supply without transistor and ic TOSHIBA TV IC regulator

    Untitled

    Abstract: No abstract text available
    Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS / u T E M ir I POWER SEMICONDUCTOR J Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplitier


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    PDF 2N5088/5089 MMBT5088/5089 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089

    5089

    Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
    Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


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    PDF 2N5088/5089 MMBT5088/5089 MMBT5088 MMBT5089 O-92/SOT-23, MIL-STD-202, OT-23 MMBT5089 5089 N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089

    transistor H-R

    Abstract: KST5088 KST5089 marking SAI
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage


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    PDF KST5088/5089 KST5088 KST5089 100mA, ST5089 transistor H-R KST5088 KST5089 marking SAI

    BC 5089

    Abstract: No abstract text available
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTO R LOW NO ISE TRANSISTO R ABSO LU TE MAXIMUM RATINGS TAB251C Characteristic Sym bol Cllector-Base Voltage K ST 5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


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    PDF KST5088/5089 TAB251C) KST5089 KST5088 BC 5089

    2n5088

    Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


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    PDF 2N5088/5089 2N5088 2N6088: 625mW 2N5089 2N50S8 2N5089 2N5088 2n6088 transistor 2N5088 2n5088 transistor 2N608

    Untitled

    Abstract: No abstract text available
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage


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    PDF 2N5088: 2N5089: 625mW 300ns, b4142 005SD33 2N5088/5089

    sot-363 MARKING l0

    Abstract: No abstract text available
    Text: Central CMKT5089M10 SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hpE TRANSISTORS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two individual, isolat­ ed 5089 NPN silicon transistors with matched hpE- This ULTRAmini™device is manufactured by


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    PDF CMKT5089M10 OT-363 13-November OT-363 sot-363 MARKING l0

    2n508

    Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
    Text: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.


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    PDF 2N5086 2N5087 2N5088 2N5089 2n5086, 2n508? 2n5088; O-92A 2f5086 2n508 2N5089 2N5089 power

    marking code CB en ic

    Abstract: No abstract text available
    Text: KST5088/5089 NPN EPITAXIAL SILICO N TRANSÌSTOR LOW NOISE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta = 25°C r Characteristic Symbol Collector-Base Voltage Rating Unit 35 30 V V 30 25 4.5 50 350 150 •V V cB O KST5088 KST5089 Collector-Emitter Voltage


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    PDF KST5088/5089 KST5088 KST5089 ST5089 marking code CB en ic

    100khz 5v transistor npn

    Abstract: KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST5088/5089 LOW NOISE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage : KST5088 : KST5089 C ollector-E m ltter Voltage : KST5088 : KST5089 Em itter-Base Voltage C ollecto r C urrent


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    PDF KST5088/5089 KST5088 KST5089 OT-23 100nA, 100khz 5v transistor npn KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking

    2N5088

    Abstract: 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2NS088: 30V 2N5089: 25V • Collector Dissipation: Pc m ax =625m W V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4 .5 50 625 150 —55^-* 1 5 0


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    PDF 2N5088/5089 2N5088: 2N5089: 625mW 2N5088 2N5089 100hA, 2N5088 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor

    2NS089

    Abstract: 2n 5088 transistor 2N5088 STC 5089
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0


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    PDF 2N5088/5089 2N5088: 2NS089: 625mW 500mA 20MHz 2NS089 2n 5088 transistor 2N5088 STC 5089

    BTA18

    Abstract: MMBT pnp BT5771 SOT23 M
    Text: Fairchild Semiconductor Qjscrete pQwer an j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T *» *6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089


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    PDF BTA18 OT-23 OT-23 BC857C BC858C BC859C MMBT pnp BT5771 SOT23 M

    2N508

    Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
    Text: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage


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    PDF 2N5088/D 2N508 N5088 N5089 O-226AA) 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA