Untitled
Abstract: No abstract text available
Text: TO SHIBA 50FXFG13,50FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage V rrm = 3300V Average Forward Current :F AV = 50A Reverse Recovery Time (Tj = 25°C) trr = 2.0/¿s
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50FXFG13
50FXFH13
50FXFG13,
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 50FXFG13,50FXFH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE SHFYFfil 3 5Î1FYFH1 3 v v • ^ m ■ 'w ■ mm g v ^ m ■ ■■ ■« r Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 8 .4 ± 0.5 • Repetitive Peak Reverse Voltage : V r r ]V[ = 3300V
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50FXFG13
50FXFH
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50FXFG13
Abstract: 50FXFH13
Text: TO SH IBA 5 0 F X F G 13 #50FXFH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 6 .4 ± 0.5 • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C
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50FXFG13
50FXFH
50FXFG13,
50FXFH13
50FXFG13
50FXFH13
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General Semiconductor diode ed 25
Abstract: 50FXFG13 50FXFH13 ED 05 Diode
Text: T O SH IB A 5 0 F X F G 13#50FXFH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 6 .4 ± 0.5 • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C
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50FXFG13
50FXFH
50FXFG13,
50FXFH13
50FXFG13
General Semiconductor diode ed 25
50FXFH13
ED 05 Diode
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 50FXFG 13 #50FXFH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 6 .4 ± 0.5 • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C
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OCR Scan
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PDF
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50FXFG
50FXFH
50FXFG13,
50FXFH13
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