G6N50E1D
Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS
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HGTP6N40E1D,
HGTP6N50E1D
O-220AB
50iiH
G6N50E1D
G6N50E1
G6N50
HGTP6N50E1D
400v 6a transistor
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2n6250
Abstract: Si948 2n6251
Text: File Number 523 HARRIS SEMICON] SECTOR 2N6249, 2N6250, 2N6251 SbE D 43G2571 004Q5B7 75Ö H H A S ^ 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors 3 5 - / 9 For Switching Applications in Industrial and Commercial Equipment Features: • High voltage ratings:
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2N6249,
2N6250,
2N6251
2N62S1)
2W6250)
2N6249)
2N6250
2N6251
T0-204AA
Si948
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LT1076CV
Abstract: No abstract text available
Text: r r u n w i _LT1074/LT1076 TECHNOLOGY Step-D own Switching R egulator FCRTUIKS • ■ ■ ■ ■ ■ ■ ■ ■ 5A On-Board Switch LT1074 Up to 200kHz Switching Frequency Greatly Improved Dynamic Behavior Available in Low Cost 5-Lead Packages
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LT1074/LT1076
LT1074)
200kHz
LT1074
LT1074/LT10
LT1074
LT1076
T0-220
LT1076CV
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s 2 umi 1A 250V
Abstract: 2N6249 2N6251 2N6250 N62S n6250
Text: 2N6249 2N6250 2N6251 POWER TRANSISTORS 10A, 450V, Fast Switching, Silicon NPN Mesa FEATURES • Collector-Base Voltage: up to 450V • Peak Collector Current: 30A • Low Saturation Voltage • Maximum Safe Area of Operation D ESCRIPTION These high voltage glass passivated power
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2N6249
2N6250
2N6251
passi20
s 2 umi 1A 250V
2N6251
N62S
n6250
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