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Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2
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CGHV22200
CGHV22200
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Abstract: No abstract text available
Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog HDFK 50I-VP VERGUSSPLATTE Order No.: 0709343 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN
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50I-VP
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Text: Extract from the online catalog HDFK 50I-VP DICHTPLATTE Order No.: 0709330 Feed-through terminal block Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918245450
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Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
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CGHV14500
CGHV14500
CGHV14
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Untitled
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Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2
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CGHV22200
CGHV22200
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CGHV22
GHV22200P
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Protocols
Abstract: TACAN arn-118 stanag 4062 STANAG 4015 AMSG-719 stanag 4074 encoder litton MIL-HDBK-1553B ARC-182 vehicle multiplex system
Text: MIL-HDBK-1553A 1 November 1988 NOT MEASUREMENT SENSITIVE SUPERSEDING MIL-HDBK-1553 9 November 1984 M U L T I P L E X A P P L I C A T I O N S H A N D B O O K AMSC: N/A FSC: MCCR DISTRIBUTION STATEMENT D. Distribution authorized to the Department of Defense
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MIL-HDBK-1553A
MIL-HDBK-1553
Protocols
TACAN arn-118
stanag 4062
STANAG 4015
AMSG-719
stanag 4074
encoder litton
MIL-HDBK-1553B
ARC-182
vehicle multiplex system
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Untitled
Abstract: No abstract text available
Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
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CGHV14
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Untitled
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Text: PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high
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CGHV22200
Abstract: No abstract text available
Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV22200
CGHV22200
CGHV22200F
CGHV22
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CGHV22200-TBions
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idq10
Abstract: No abstract text available
Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV22200
CGHV22200
CGHV22200F
CGHV22
GHV22200P
CGHV22200-TBions
idq10
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Untitled
Abstract: No abstract text available
Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
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CGHV14500
CGHV14500
CGHV14
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Untitled
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Text: Sealing plate - HDFK 50I-VP VERGUSSPLATTE - 0709343 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid
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com/us/products/0709343
50I-VP
EC001283
EC002498
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Untitled
Abstract: No abstract text available
Text: ucüdiuy Iou/1 y I A IVI F3 R e vise d 1 0-0 C RF Coax Connectors DIN Inserts inontimipr Coaxial Inserts 50iV75 12) Bulkhead cable jack for male connectors 0 Max. 2.6 .102 2.67 .105 C ab le Type R G 316 (50 Q) R G 179 (75 0 ) Width A c ro s s Flats of Hex Profile
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50iV75
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PDF
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12FL
Abstract: KDE0505PFS1-8
Text: r SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL APPROVED NO APPROVED BY AUTHORZIED DC BRUSHLESS FAN 50X50X10 mm KDE0505PFS1-8 S3-&U. \X\ DAWN. ftt* CHKD. N, mm% j SPEC. NO. 052354300 ISSUE DATE 01.16.1996 APPD. -5 # = - EDITION REVISE DATE
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TEL886-7-7163069
50X50X10
KDE0505PFS1-8
KDE0505PFS1-8
UL2468
26AWG,
UL2468
26AWG
12FL
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Untitled
Abstract: No abstract text available
Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator January 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence
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HFA3724
400MHz
10MHzto
400MHz
HFA3724
HFA3722
500MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator August 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence
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HFA3724
400MHz
10MHzto
400MHz
HFA3724
HFA37
1-800-4-HARRIS
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MJ10100
Abstract: AR-109 AR109/D
Text: POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES — Prepared By W arren Schultz Motorola Inc. Power Products Division Phoenix, Arizona Reprinted by Permission of Intertech Communications, Inc., from the Proceedings of Motorcon '81.
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AR109/D
1PHX15069-2
MJ10100
AR-109
AR109/D
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bc 331
Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
Text: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier
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PD-93759
IRLMS4502
OT-23.
EIA-481
EIA-541.
bc 331
mosfet ir 840
irlms4502
P 838 X MOSFET
diode marking code YF
IRLMS5703
IRLMS6702
Micro6 Package
marking JB diode
D 042 silicon rectifier diode
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