Ip200mA
Abstract: 600L100
Text: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1
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--300K/W
50mmx50mmxl
24-Jun-96
Ip200mA
600L100
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Telefunken u 439
Abstract: No abstract text available
Text: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2%
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300K/W
50mmx50mmxl
D-74025
24-Jun-96
Telefunken u 439
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Untitled
Abstract: No abstract text available
Text: T e m ic BZT55C._ S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications
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BZT55C.
300K/W
50mmx50mmxl
24-Jun-96
DD11014
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Untitled
Abstract: No abstract text available
Text: T e m ic BAQ33.BAQ35 Semiconductors Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage
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BAQ33.
BAQ35
BAQ33
BAQ34
50mmx50mmxl
24-Jun-96
BAQ35
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Untitled
Abstract: No abstract text available
Text: Temic TZQ5221B.TZQ5267B S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise 96 12009 Applications
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TZQ5221B.
TZQ5267B
--300K7W
50mmx50mmxl
D-74025
22-Aug-97
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T4AS
Abstract: No abstract text available
Text: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage
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BA779-2
50mmx50mmxl
D-74025
12-Dec-94
T4AS
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Untitled
Abstract: No abstract text available
Text: Temic BA779.BA779S S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Test Conditions Parameter Reverse voltage
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BA779
BA779S
50mmx50mmxl
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization
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300K/W
50mmx50mmxl
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Untitled
Abstract: No abstract text available
Text: Temic TZS4678.TZS4717 S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 jiA • Maximum delta • Very high stability • Low noise given from 10 jiA to 100 jiA Applications Voltage stabilization Absolute Maximum Ratings
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TZS4678.
TZS4717
300K/W
50mmx50mmxl
D-74025
04-Jun-97
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