Untitled
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
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NPTB00050B
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
NPTB00050B
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NPTB00050
Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from
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NPTB00050
4000MHz
500-1000MHz
EAR99
450mA,
3000MHz,
NDS-007
NPTB00050B
Gan on silicon substrate
ELXY
ELXY630ELL271MK25S
12061C103KAT2A
nds 40
JESD22-A114
JESD22-A115
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NTE325
Abstract: No abstract text available
Text: NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE325
30MHz
NTE325
30MHz.
30MHz
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RD70HVF1
Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
RD70HVF1-101
175MHz
520MHz
uhf power transistor 50W
RD70HVF
RD70HVF1-101
High frequency P MOS FET transistor
010PF
071J
RF Transistor Selection
100OHM
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RD70HVF
Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
520MHz
RD70HVF
rd70
RD70HVF1-101
100OHM
071J
1695 GP 1
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RD70HVF
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
520MHz
RD70HVF
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RD70HVF1
Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
RD70HVF1-101
175MHz
520MHz
RD70HVF1-101
RD70HVF
vhf power transistor 50W
uhf power transistor 50W
MITSUBISHI RF POWER MOS FET
S 170 MOSFET TRANSISTOR
RF Transistor s-parameter vhf
100OHM
Rf power transistor mosfet
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RD70HVF1-101
Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
Oct2011
RD70HVF1-101
RD70HVF
70w power amplifier rd70hvf1
60W VHF circuit RF amplifier
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RD70HVF
Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
520MHz
RD70HVF
RD70HV
vhf power transistor 50W
MOSFET 2095 transistor
50w rf power transistor
520-MHz
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RD70HVF1
Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers
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RD70HVF1
175MHz70W
520MHz
RD70HVF1
175MHz
520MHz
RD70HVF
transistor d 1710
S 170 MOSFET TRANSISTOR
vhf power transistor 50W
100OHM
50w rf power transistor
d 2095 transistor
MOSFET 2095 transistor
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A1933
Abstract: amplifier 50 50W
Text: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
RF3931D
DS110216
A1933
amplifier 50 50W
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Untitled
Abstract: No abstract text available
Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
DS110520
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46dBm
Abstract: No abstract text available
Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
RF3931D
DS110520
46dBm
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smd Transistor 1117
Abstract: PD85050S smd Transistor 1116 J0363
Text: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary data Features • Operating frequencies from 1 MHz to 1000 MHz ■ POUT > 50W with 12dB gain @ 870 MHz / 13.6V ■ Unmatched device for wideband operation
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PD85050S
PowerSO-10RF
2002/95/EC1
PowerSO-10RF
PD85050S
smd Transistor 1117
smd Transistor 1116
J0363
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.
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ILD0912M400HV
ILD0912M400HV
960-1215MHz.
ILD0912M400HV-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L470 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst
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IB1011L470
IB1011L470
IB1011L470-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing
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IB1012S500
IB1012S500
IB1012S500-REV-NC-DS-REV-NC
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J464
Abstract: SL-5020 j196 Transistor J182
Text: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in
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SL-5020
SL-5020
SL-50201
40otal
SL-50202
J464
j196
Transistor J182
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transistor C 245 b
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
transistor C 245 b
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MPS-H20
Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MPS-H20
npn, transistor, sc 107 b
MV400
3 w RF POWER TRANSISTOR NPN
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T1P3005028-SP
Abstract: 50w transistor RF power transistor
Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed
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T1P3005028-SP
T1P3005028-SP
500MHz
50watts
50w transistor
RF power transistor
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332MCP
Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.
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297MP
NTE297
NTE297)
T0202
NTE307)
300MP
NTE300
27MHz)
NTE332)
332MCP
NTE307
27MHz rf transmitter
NTE332
NTE297
NTE300
T072
T092
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2 x 50W amplifier
Abstract: UHF TRANSISTOR 2SC3218B 50w transistor
Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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2SC3218B
2SC3218B
2 x 50W amplifier
UHF TRANSISTOR
50w transistor
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