2 Wavelength Laser Diode
Abstract: p3004 Q62702-P3004 51007G
Text: STL 51007X 1300 nm Laser in Receptacle Package, Low Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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51007X
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Q62702-P3004
2 Wavelength Laser Diode
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Abstract: No abstract text available
Text: SIEMENS 1300 nm Laser in Receptacle Package, High Power STH 51007X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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Abstract: No abstract text available
Text: A B D C NOTES: 1. MATERIAL: 1.1 HOUSING: THERMOPLASTIC, HIGH TEMP., U L94V-0;C O LO R IS N atu ral. 1.2 CONTACT: COPPER ALLOY 2. FINISH: 2.1 CONTACT: GOLD FLASH OVER ALL 5 0 u ” MIN. NICKEL UNDERPLATING OVERALL. 3. IR REFLOW CAPABLE TO 260°C PER ACES SPEC.
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Abstract: 51007G
Text: SIEMENS 1300 tvn Laser in Receptacle Package, Medium Power STM 51GQ7X * * * * Designed for application in fiber-optic networks Laser diode with Mum-Quantum Well structure Suitable for bit rates up to 1 Gbit/s T'srnary photodiodn at rear mirror for monitoring and
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