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    5101 STATIC RAM Search Results

    5101 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    5101 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Heat Volume Counter MSP430

    Abstract: tss721 msp430 TSS721 MSP430 Manual MSP430 MSP430C336 MSP430 General Purpose Subroutines zener diode 4148 code "pocket Scale" "gas Sensor"
    Text: MSP430 Family Mixed-Signal Microcontroller Application Reports Author: Lutz Bierl Literature Number: SLAA024 January 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue


    Original     		MSP430 SLAA024 Heat Volume Counter MSP430 tss721 msp430 TSS721 MSP430 Manual MSP430C336 MSP430 General Purpose Subroutines zener diode 4148 code "pocket Scale" "gas Sensor" PDF

    msp430 TSS721

    Abstract: tss721 MSP430 169 Heat Volume Counter MSP430 MSP430 MSP430C336 EEPROM coding MSP430 General Purpose Subroutines ferra msp430 hall
    Text: MSP430 Family Mixed-Signal Microcontroller Application Reports Author: Lutz Bierl Literature Number: SLAA024 November 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue


    Original     		MSP430 SLAA024 msp430 TSS721 tss721 MSP430 169 Heat Volume Counter MSP430 MSP430C336 EEPROM coding MSP430 General Purpose Subroutines ferra msp430 hall PDF

    HM435101

    Abstract: JVC DR -E2LBK s5101* ami HM43 ram 5101 MCM5101 HM6501 MCM5101C65 MCM5101C80 MCM51L01
    Text: M O TO R O LA 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f CM O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-volt supp ly. The C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and


    OCR Scan     		MCM5101 MCM51L01 1024-bit MCM5101 HM435101 JVC DR -E2LBK s5101* ami HM43 ram 5101 HM6501 MCM5101C65 MCM5101C80 MCM51L01 PDF

    5101 sram

    Abstract: HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 MCM5101-65
    Text: MOTOROLA MCM5101 MCM51LOI 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f C M O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-v o lt supp ly. T he C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and


    OCR Scan     		MCM5101 MCM51LOI 1024-bit MCM51L01-45 MCM51L01-65 MCM5101-65 MCM5101-80 MCM51L01 5101 sram HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 PDF

    5101ab

    Abstract: ic 5101 ram 5101 cmos ram L21S
    Text: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M


    OCR Scan     		M5101-4, M5101L-4 200nA/Bit 800ns M5101L-4 5101ab ic 5101 ram 5101 cmos ram L21S PDF

    5101 RAM

    Abstract: intel 2101 Static RAM
    Text: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:


    OCR Scan     		5101L 5101L-1 5101L-3 5101L) 1024-bit 100pF 5101 RAM intel 2101 Static RAM PDF

    5101 RAM

    Abstract: Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE
    Text: irrte1 « In te l C o rp o ra tio n 1975 APPLICATION NOTE AP-12 Contents Designing Non-Volatile Memory Systems with Inters 5101 RAM IN T R O D U C T IO N . 1 D E V IC E D E S C R IP T IO N .


    OCR Scan     		AP-12 100pF 5101L, 5101L-3 5101 RAM Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE PDF

    5101 RAM

    Abstract: ram 5101 intel 5101 intel 2101 5101L ram 5101L-1 intel 2101 Static RAM 5101L-3 5101 intel 5101L
    Text: intei 5101 FAMILY ^ 256 x 4 BIT STATIQX M O S jR A M P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) Max Access (ns) 0.14 0.2 0.2 1.0 650 450 650 5101L 5101L-1 5101L-3 0.14 0.70 •Single +5V Power Supply ■ Ideal for Battery Operation (5101L) ■ Directly TTL Compatible:


    OCR Scan     		5101L 5101L-1 5101L-3 5101L) 1024-bit 20nsec 100pF 5101 RAM ram 5101 intel 5101 intel 2101 5101L ram intel 2101 Static RAM 5101 intel PDF

    ic 5101 ram

    Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
    Text: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x


    OCR Scan     		LH5101 22-pin, 300-mil LH5101 LH5101-30 ic 5101 ram 5101 RAM LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram PDF

    LH5101

    Abstract: LH5101-30 intel 5101 5101 static ram
    Text: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:


    OCR Scan     		LH5101 22-pin, 300-mil 28-PIN LH5101 LH5101-30 LH5101-30 intel 5101 5101 static ram PDF

    Intel mcs-40

    Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
    Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough


    OCR Scan     		S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: In t e l M5101-4, M5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output


    OCR Scan     		M5101-4, M5101L-4 200nA/Bit 800ns PDF

    HM435101

    Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
    Text: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and


    OCR Scan     		MCM5101 MCM51L01 256x4 1024-bit MCM510TMCM51L01 l/OI111 HM435101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01 PDF

    saa6000

    Abstract: 65536 page mode dynamic ITT4164 ITT5101S
    Text: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched


    OCR Scan     		ITT4164 65536-Bit 16-Pin ITT4164-15) ITT4164-20) SAA6000 ITT5101S saa6000 65536 page mode dynamic PDF

    HM435101

    Abstract: L0145 D11-CR HM43 MCM5101 ram 5101 s5101* ami D11/CR HM6501 MCM5101C65
    Text: r> • r . @ M O T O R O L A \ > >.\ 0 u MCM5101 MCM51L01 2 5 6 x4 BIT STATIC RAM CMOS T h e M C M 5 1 0 1 fa m ily o f C M O S R A M s o ffe r s u ltra lo w p o w e r a n d f u l­ ly s ta tic o p e ra tio n w it h a s in g le 5 -v o lt s u p p ly . T h e C M O S 1 0 2 4 -b it


    OCR Scan     		MCM5101 MCM51L01 256x4 1024-bit MCM5101-MCM51L01 HM435101 L0145 D11-CR HM43 ram 5101 s5101* ami D11/CR HM6501 MCM5101C65 PDF

    HM62W8128-12

    Abstract: No abstract text available
    Text: HM62W8128 Series Product Preview 131072-Word x 8-B it High Speed CMOS Static RAM O rdering Inform ation D escription Type No. Access time HM62W8128LP-10 100 ns HM62W8128LP-12 120 ns HM62W8128LP-10L 100 ns HM62W8128LP-12L 120 ns HM62W8128LP-10SL 100 ns HM62W8128LP-12SL


    OCR Scan     		HM62W8128 131072-Word HM62W8128LP-10 HM62W8128LP-12 525-mil HM62W8128LP-10L 600-mil 32-pin 460-mil HM62W8128-12 PDF

    RR-63

    Abstract: No abstract text available
    Text: inteT RELIABILITY REPORT RR-63 August 1989 4 Static RAM Reliability Report MADHU NIMGAONKAR COMPONENTS CONTRACTING DIVISION QUALITY AND RELIABILITY ENGINEERING Order Number: 240544-001 4-63 SRAM RELIABILITY DATA SUMMARY CONTENTS PAGE 1.0 IN T R O D U C T IO N .4-65


    OCR Scan     		RR-63 RR-63 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 62963 Product Preview 4 K x 1 0 B it S ynchronous S ta tic R A M with Output Registers The MCM62963 is a 40,960 bit synchronous static random access memory organized as >1096 words of 10 bits, fabricated using Motorola's second-generation high-performance


    OCR Scan     		MCM62963 r------------------62963 62963FN20 62963FN25 62963FN30 PDF

    47C400

    Abstract: TMP47C423AF lg lcd monitor circuit diagram QFP64 Display 7 segment sec 5101 8 pin configuration LCD 5110 Display 7 segment sec 5101
    Text: TO SH IBA TMP47C423A CMOS 4-BIT MICROCONTROLLER TMP47C423AF The 47C423A is a high speed and high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with LCD driver, High Speed Event Counter and Pulse output circuit. PART No. ROM RAM


    OCR Scan     		TMP47C423A TMP47C423AF 47C423A TLCS-47 TMP47C423AF QFP64 23pins 70Kii 47C400 lg lcd monitor circuit diagram QFP64 Display 7 segment sec 5101 8 pin configuration LCD 5110 Display 7 segment sec 5101 PDF

    cs 2648

    Abstract: lu 7821 PCF29F64 PCX8582 IE2K MC0272 PCF29F64P PCF29F64T S028 B1070
    Text: 10 I»*-' INTEGRATED CIRCUITS PCF29F64 8 K x 8-bit static CMOS EEPROM with PAG E-ERASE option Preliminary specification File under Integrated Circuits, IC10 January 1993 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification


    OCR Scan     		PCF29F64 32-byte 256-byte SCD14 cs 2648 lu 7821 PCF29F64 PCX8582 IE2K MC0272 PCF29F64P PCF29F64T S028 B1070 PDF

    diagram of 16x32 LED matrix display

    Abstract: pin diagram 16x32 LED matrix display led matrix 16X32 16*32 LED Matrix 16x32 red LED 16x32 LED matrix display
    Text: 2001. 2.8 A K T E N TA T IV E LED DOT MATRIX MODULE M ODEL : K L M -9 6 D C A N A U K CORP. 802- 12 Shinheung-Dong, Iksan, Korea TEL : 063 835-7111 FAX : (063) 835-2681 URL : http://ww w.auk.co.kr E -m ail : webmaster@auk.co.kr 2001. 2. 8 2001. 2.8 1. O VE R VIE W


    OCR Scan     		KLM-96D 96x192x11 16x32) si011 IHIAI-21- diagram of 16x32 LED matrix display pin diagram 16x32 LED matrix display led matrix 16X32 16*32 LED Matrix 16x32 red LED 16x32 LED matrix display PDF

    intel 8282

    Abstract: INTEL I7 microprocessor circuit diagram pin diagram of ic 8088 2817A 8031 Intel Microprocessor 8088 intel microprocessor pin diagram INTEL 2817a 2817A-2 8088 intel microprocessor circuit diagram intel 2816A
    Text: r a iO M O lM W 2817A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation • Write Protect Circuit to Preserve Data on Power Up and Power Down On-Chip Latches for Direct Microprocessor Interface ■ 10,000 Erase/Write Cycles per Byte Automatic Byte-Erase-before-Write


    OCR Scan     		-2817A-1 -2817A-2 -2817A -2817A-3 -2817A-4 200ns 250ns 350ns 450ns intel 8282 INTEL I7 microprocessor circuit diagram pin diagram of ic 8088 2817A 8031 Intel Microprocessor 8088 intel microprocessor pin diagram INTEL 2817a 2817A-2 8088 intel microprocessor circuit diagram intel 2816A PDF

    8X16

    Abstract: KPM-240LAU
    Text: 2002 . 1 . 7 A 0 K T E N TA T IV E LED DOT MATRIX MODULE M ODEL : K P M -2 4 0 L A U 3 Colors LD M for outdoor use A U K CORP. 802- 12 Shinheung-Dong, Iksan, Korea TEL : (063) 835-7111 FAX : (063) 835-2681 URL : http://ww w.auk.co.kr E -m ail : webmaster@auk.co.kr


    OCR Scan     		KPM-240 120x240x30 8X16 KPM-240LAU PDF

    MCM32100DG60

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32100D Product Preview D PACKAGE SM ALL O UTLINE DIMM M ODULE CASE 992-01 1M x 32 Bit DRAM Small Outline Memory Module T h e M C M 32100D is a 5 V D RAM sm all outline m em ory m odule SO M M organized as 1,048,576 x 32 bits. The m odule is a JE D E C -standard 72-lead m em ber of th e


    OCR Scan     		MCM32100D 32100D 72-lead 4400A MCM32100D60 MCM32100D70 MCM32100DG60 MCM32100DG70 MCM32100D PDF