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    511 MOSFET Search Results

    511 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    511 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN6M9P Preliminary 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    MO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN6M9P Preliminary 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    MO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    UXN14M9P -147dBc 10kHz MO-220 UXN14M9P PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm


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    MO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    UXN14M9P -147dBc 10kHz MO-220 UXN14M9P co01-2009 smd-00020 UXN14M9P: PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    UXN14M9P -147dBc 10kHz MO-220 UXN14M9P PDF

    leadframe Cu C194

    Abstract: POWER MOSFET P1 smd marking code C194 MO-220 UXN14M9P
    Text: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive


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    UXN14M9P -147dBc 10kHz MO-220 UXN14M9P smd-00020 UXN14M9P: leadframe Cu C194 POWER MOSFET P1 smd marking code C194 PDF

    UXN6M9P

    Abstract: No abstract text available
    Text: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm


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    MO-220 smd-00027 UXN6M9P PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm


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    MO-220 PDF

    C194

    Abstract: MO-220 divide-by-10 MARKING CODE SMD IC leadframe Cu C194 smd marking 3263 OUTP26
    Text: CENTELLAX UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 9 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive Size: 6mm x 6mm


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    MO-220 smd-00027 C194 divide-by-10 MARKING CODE SMD IC leadframe Cu C194 smd marking 3263 OUTP26 PDF

    SLVU331

    Abstract: TPS54218RTE
    Text: User's Guide SLVU331 – September 2009 TPS54218EVM-511 2-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4


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    SLVU331 TPS54218EVM-511 SLVU331 TPS54218RTE PDF

    IRF511

    Abstract: IRF510 IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510
    Text: N-CHANNEL POWER MOSFETS IRF510/511 FEATURES • L o w e r R d s <o n • Improved inductive raggedness • Fast switching times • Rugged poiysiiicon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    IRF510/511 IRF510 IRF511 71b414S IRF510 MOSFET IRF511 MOSFET 250M rectifier diode bbc DIODE BBC MOSFET IRF510 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRF510/511 IRF510 IRF51 IRF513 IRF511 IRF512 G012150 PDF

    RUR30100

    Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
    Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns


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    43D2571 110ns) RUR3070, RUR3080, RUR3090, RUR30100 RUR3080. RUR3090RUR30100 rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V PDF

    leadframe Cu C194

    Abstract: 000027 FRS 8 8 OHM
    Text: UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Product Highlights • Wide Operating Range: DC-9 GHz 40 pin Quad Flat No Lead QFN 6x6 mm pkg, 0.5 mm pad pitch JEDEC MO-220 Compliant UXN6M9P XXXX Marking Information: UXN6M9P = Device Part Number


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    MO-220 SmD-000027 leadframe Cu C194 000027 FRS 8 8 OHM PDF

    SMD DATASHEET

    Abstract: No abstract text available
    Text: UXN6M9P Datasheet 9 GHz Divide-by-8 to 511 Programmable Integer Divider Product Highlights • Wide Operating Range: DC-9 GHz 40 pin Quad Flat No Lead QFN 6x6 mm pkg, 0.5 mm pad pitch JEDEC MO-220 Compliant UXN6M9P XXXX Marking Information: UXN6M9P = Device Part Number


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    MO-220 SmD-000027 SMD DATASHEET PDF

    1rf510

    Abstract: 1RF51
    Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ


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    M3DE271 IRF510/511/512/513 IRF51OR/511R/512R/513R IRF510, IRF511, IRF512, IRF513 IRF510R, IRF511R, IRF512R 1rf510 1RF51 PDF

    1RF511

    Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
    Text: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*


    OCR Scan
    IRF510/511/512/513 IRF510R/511R/512R/513R IRFS10, IRF511, IRF512, IRF513 IRF510R, 1RF511R, IRF512R IRF513R 1RF511 IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51 PDF

    D2Pak Package dimensions

    Abstract: MOSFET 355 2X transistor transistor 355 355 data
    Text: Super-D 2Pak Package Outline 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 3 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 1 9.2 [.362] 9.0 [.355] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] 2X B A


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    5M-1994. D2Pak Package dimensions MOSFET 355 2X transistor transistor 355 355 data PDF

    FCQFN

    Abstract: No abstract text available
    Text: MIC285 511 60 0VIN, 3A Sy ynchronous s Buck Regulator Gen neral Desc cription Featu ures The MIC28511 is i a synchro onous step-d down switching regullator with inte ernal power sw witches capable of providing up to o 3A output current from a wide inpu ut supply range


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    MIC285 MIC28511 200kHz FCQFN PDF

    Untitled

    Abstract: No abstract text available
    Text: LINEAR TECHNOLOGY CORP 53E j> • S S l f l 4L,fl OOObb^a 511 m L T C LT1246 / T L I i m . TECHNOLOGY 1MHz Off-Line Current Mode PWM F€flTUR€S D C S C M P T IO n ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1246 is an 8-pin, fixed frequency, current mode,


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    LT1246 LT1246 UC1842 000b7D2 T-58-ll 300mV IT1246 PDF

    LTI24

    Abstract: No abstract text available
    Text: LINEAR TECHNOLOGY CORP 53E j> • S S l f l 4L,fl OOObb^a 511 m L T C LT1246 / T L I i m . TECHNOLOGY 1MHz Off-Line Current Mode PWM F€flTUR€S D C S C M P T IO n ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1246 is an 8-pin, fixed frequency, current mode,


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    LT1246 LT1246 UC1842 000b7D2 T-58-ll 300mV IT1246 LTI24 PDF

    IRF510

    Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
    Text: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area


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    IRF510/511/512/513 IRF510 IRF512 IRF513 IRF510 MOSFET irf510 ir 05b diode PDF

    IRF510

    Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
    Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power


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    IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF511 IRF512 IRF513 PDF