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    511 TRANSISTOR Search Results

    511 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    511 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC107 to92

    Abstract: 511-2N2222A MMBTA29 SO2222A BCY59IX 2n2222a SOT223 511-TIP30 mj2955 TO-218 DATASHEET FOR 323 BD244C 511-TIP2955
    Text: BACK NEXT Transistors STMICROELECTRONICS Bipolar and Small Signal Transistors STMICROELECTRONICS PNP POWER BIPOLAR TRANSISTORS cont. MOUSER STOCK NO. STMicroelectronics SOT-23-3 SOT-223 SOT-323 SOT-89-3 TO-220AB Thru Hole 511-TIP145 511-2N6490 511-MJ2955


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    PDF OT-23-3 OT-223 OT-323 OT-89-3 O-220AB 511-TIP145 511-2N6490 511-MJ2955 511-TIP2955 511-BD140 BC107 to92 511-2N2222A MMBTA29 SO2222A BCY59IX 2n2222a SOT223 511-TIP30 mj2955 TO-218 DATASHEET FOR 323 BD244C 511-TIP2955

    Untitled

    Abstract: No abstract text available
    Text: 2N4261UBC Compliant PNP Small Signal Silicon Transistor Qualified Levels: JANS Qualified per MIL-PRF-19500/511 DESCRIPTION This 2N4261UBC small signal transistor features ceramic bodied construction with a ceramic lid for military grade products per MIL-PRF-19500/511. It is also available with the standard


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    PDF 2N4261UBC MIL-PRF-19500/511 2N4261UBC MIL-PRF-19500/511. 2N4261 T4-LDS-0150-2,

    Untitled

    Abstract: No abstract text available
    Text: A Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 511 Series is an efficient medium-gain thin-film bipolar RF amplifier. Resistive feedback and active bias provide temperature


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    Untitled

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500␣MHz The 511 Series is an efficient medium-gain thin-film bipolar RF amplifier. Resistive feedback and


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    PDF 500MHz 5963-2554E

    teledyne cougar

    Abstract: 509-1 MAG teledyne transistor
    Text: A Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 511 Series is an efficient medium-gain thin-film bipolar RF amplifier. Resistive feedback and active bias provide temperature


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    Untitled

    Abstract: No abstract text available
    Text: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the


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    PDF 2N4261UB MIL-PRF-19500/511 2N4261UB MIL-PRF-19500/511. 2N4261 T4-LDS-0150-1,

    SLVU331

    Abstract: TPS54218RTE
    Text: User's Guide SLVU331 – September 2009 TPS54218EVM-511 2-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4


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    PDF SLVU331 TPS54218EVM-511 SLVU331 TPS54218RTE

    "Bipolar Transistor"

    Abstract: datasheets for CROs microwave diode ratings 900 mhz oscillator
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 900 - 1100 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    Untitled

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 1200 - 1400 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    Untitled

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 500 - 700 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    Untitled

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 1800 - 2000 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    microwave diode ratings

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 1100 - 1200 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    Untitled

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 1600 - 1800 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    Untitled

    Abstract: No abstract text available
    Text: Series 511 COAXIAL RESONATOR OSCILLATOR 700 - 900 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Fixed Frequency Spectrum Microwave CROs produce impressive frequency stability and phase noise when used in a


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    2N4261

    Abstract: 2N4261UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV


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    PDF MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UB, T4-LDS-0150 2N4261 2N4261UB

    2N4261

    Abstract: 2N4261 JAN
    Text: Data Sheet No. 2N4261 Generic Part Number: 2N4261 Type 2N4261 Geometry 0014 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/511 Features: • • • • • Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using


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    PDF 2N4261 MIL-PRF-19500/511 MIL-PRF-19500/511 2N4261 2N4261 JAN

    Untitled

    Abstract: No abstract text available
    Text: MA42110-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF MA42110-511

    Untitled

    Abstract: No abstract text available
    Text: 599 FIBER SENSORS Light Curtain Type 2 SF2B SERIES Ver.2 Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions.P.1359~ / P.1405 ■■Sensor selection guide.P.511~ ■■SF-C10. P.633~


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    PDF SF-C10. BSF4-AH80

    Untitled

    Abstract: No abstract text available
    Text: MA42111-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF MA42111-511

    TBA311

    Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
    Text: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,


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    PDF 16-lead TBA311 TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214

    Untitled

    Abstract: No abstract text available
    Text: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient


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    PDF 44475A4 001DbT3

    photo transistor

    Abstract: FS-511 FC-101 photo transistor high current
    Text: C INTERFACE INC IDE D | 0023303 0000404 ^ ÏÂ ^ mey ^ | ~ FS-511 STANLEY PHOTO TRANSISTOR • Package Dimensions ■ FEATURES 1 High accuracy by use of special resin package with central chip (2) High photo current (Typ. 2.5m A at Ee = 10mW/cm2 ) (3) Fast response permits fast transmission


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    PDF FS-511 10mW/cm2) FC-101 FC-101 photo transistor FS-511 photo transistor high current

    teledyne crystalonics

    Abstract: 2N5330 2N5329 LIN5410
    Text: m 5ÖE D TELEDYNE COMPONENTS ÖTlTtiQE QQQtiSBÖ 4 • T -J * ''/ NPN POWER TRANSISTORS 20 & 30 AMP GEOMETRY 511 • le to 30 Amp • Fast Switching MAXIMUM RATINGS PARAMETER SYMBOL Collector-Emitter Voltaae Collector-Base Vottaae Emtttef-Base Voltaa Collector Current-Continuous


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    PDF 2N5329 2N5330 200-C 10mHz 10ADC LIN5410 teledyne crystalonics LIN5410

    HA2620

    Abstract: 1420nm
    Text: 511 H a r r is U U HA-2620, HA-2622, 2625 SEMICONDUCTOR 100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers November 1996 Features • • • • • • • • Description Gain Bandwidth Product Ay > 5 . 100MHz


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    PDF HA-2620, HA-2622, 100MHz, HA-2620/2622/2625 500MU HA-2620) 100MHz HA2620/2622/2625 HA2620 1420nm