Contextual Info: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced

Contextual Info: 1,048,576 W 0 R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The T H M 9 1 0 0 0 B S /B S G /B L is a 1,048,576 words by 9 bits dynam ic RAM m odule which assem bled 9 pcs of TC 511000B J on the printed circuit board. The THM 91000BS / BSG / BL is optim ized for

Contextual Info: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60

Contextual Info: H M 5 1 1 0 0 1 A S e r i e s - 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 5 1 1 0 0 1 A P S e r ie s The Hitachi H M 511001A series is a C M OS dynamic RAM organized 1,048,576word x 1-bit. H M 511001A has realized higher density, higher performance and vari­

511000BJ7

Contextual Info: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

HM511001-12

Abstract: HM511001
Contextual Info: H M 511001 S e r ie s 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi 511001 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. 511001 has realized higher density, higher performance and various functions by employing 1.3jum CMOS process technology and some new CMOS circuit

HM511001-12

Contextual Info: H M 511001S S e rie s -Preliminary 1048576-word x 1-bit CM O S Dynamic Random Access Memory The Hitachi HM 511001S series is a C M O S dynamic R A M organized 1048576-word x 1-bit. H M 511001S has realized higher density, higher performance and various functions by employing

HB56A19B

Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type

M511000B

Contextual Info: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION T h e O K I M S C 2 3 1 2 B -x x Y S 9 /K S 9 is a fu lly d e co d ed 1 ,0 4 8 ,5 7 6 -w o rd x 9 -b it C M O S D y n a m ic R a n d o m A ccess M em ory M od u le co m p o sed o f n in e 1-M b D R A M s in S O J M S M 511000B p ack ag es m ou n ted w ith

Contextual Info: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to

DQ712

Abstract: 511000BJ-70
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version

Contextual Info: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60

HM511001AP-12

Abstract: 511001AP
Contextual Info: 511001A Series 1,048,576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511001AP Series The H itachi H M 51 1 0 01 A series is a C M OS dynam ic R AM organized 1,048,576w ord x 1-bit. H M 51 1001A has realized higher density, higher p erform ance and vari­

tca 761

Contextual Info: HMS11000H Series 1048576-word x 1-bit CMOS Dynamic RAM The Hitachi H M 5 1 1 0 0 0 H series is a CMOS dynam ic R A M o r­ ganized 10 4857 6-w o rd x 1-bit. H M 5 1 1 0 0 0 H has realized higher HM 511000H P Scries density, higher performance and various functions by em ploying

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

HM511000AJP7

Abstract: HM511000 HM511000AJP-7 dynamic ram 8 bit hm511000 HM511000AJP8 DP-18C HM511000AZP-8 HM511000A Hitachi Scans-001 HM511000AP-7
Contextual Info: H M 5 1 1 0 0 0 A S e rie s H M 5 1 1 0 0 0 A L ~ S e rie s 1048576-Word x 1-Bit CMOS Dynamic RAM H M 511000A /A L P Series • DESCRIPTION The Hitachi 511000A/AL series is a CMOS dynamic RAM organized 1048576-word x 1-bit. 511000A/AL has realized higher density, higher perform­

HB56A18B-8A

Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Contextual Info: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single

CSR 8811

Abstract: HM511001AP6 HM511001 HM511001ajp
Contextual Info: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi 511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. 511001A has realized higher density, higher performance and vari­

511001A

Abstract: A8 Jh
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 511001A Advance Information 1 M x 1 C M O S Dynamic RAM P PACKAGE PLASTIC CASE 707A The M C M 511001A is a 1.0^ C M O S high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CM O S silicon-gate process

Contextual Info: O K I semiconductor 511001B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511001B is a new generation dynam ic RAM organized as 1,048,576 w ords x 1 bit. The technology used to fabricate the 511001B is OKI's CM OS silicon gate process technology. The

Contextual Info: 1,048,576 W ORDS x 8 BIT D Y N A M IC RAM M O DULE DE SC R IP TIO N T he T H M 8 1 0 0 0 B S /B S G /B L is a 1,048,576 w ords by 8 b its dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000B J on the p rin te d c ircu it board. T he T IÏM 81000B S / BSG / BL is optim ized for

hyb511000a

Abstract: HYB511000 511000a HYB511000AL
Contextual Info: B aeiSbGS GGS037b 5 Ó S I E G SIEMENS AKTIENGESELLSCHAF 47E D * T - Lf £ ' Z 3 * fS HYB 511000AL-60/-70 1M x 1-Bit Dynamic RAM Low Power Version Advance Information • 1 048 576 x 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time (HYB 511000AL-60)

HYB51

Contextual Info: SIEM ENS HYB 511002-10/-12 1 048 576 Bit Static Column Dynamic RAM 1 048 576 w o rd s by 1 b it o rg a n iz a tio n Fast access and c ycle tim e 100 ns access tim e 190 ns c ycle tim e HYB 511002-10 120 ns access tim e 220 ns c ycle tim e (HYB 511002-12)

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511000B/BL is OKI’s CMOS silicon gate process technology.