WCs MARKING
Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation
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Original
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5116400BJ-50/-60
5117400BJ-50/-60
3116400BJ/BT-50/-60
3117400BJ-50/-60
400BJ-50/-60
400BJ/BT-50/-60
P-TSOPII-26/24-1
GPX05857
WCs MARKING
SMD MARKING code ASC
SMD MARKING CODE RAC
5117400
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PDF
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Q67100-Q1049
Abstract: Q67100-Q1050 Q67100-Q1051
Text: 4M x 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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Original
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5116400BJ
5116400BJ-50/-60/-70
GPJ05628
P-SOJ-26/24
Q67100-Q1049
Q67100-Q1050
Q67100-Q1051
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PDF
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HYB5116400BJ
Abstract: HYB5116400BT
Text: 4M x 4-Bit Dynamic RAM 5116400BJ -50/-60/-70 5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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Original
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HYB5116400BJ
HYB5116400BT
5116400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
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PDF
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q207
Abstract: 74ABT244
Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 724000GS-50/-60 HYM 724010GS-50/-60 Preliminary Information • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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Original
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72-Bit
724000GS-50/-60
724010GS-50/-60
HYM724000/10GS-50/-60
L-DIM-168-6
4Mx72
DM168-6
q207
74ABT244
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PDF
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HYB3116400
Abstract: HYB3117400 HYB5116400 HYB5117400
Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode 5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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Original
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HYB5116400BJ/BT-50/-60
HYB5117400BJ/BT-50/-60
HYB3116400BJ
HYB3117400BJ
HYB5116400
HYB3116400
HYB5117400
HYB31
HYB5116
400BJ-50/-60
HYB3116400
HYB3117400
HYB5116400
HYB5117400
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20
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OCR Scan
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5116400BJ
5116400BJ-50/-60/-70
P-SOJ-26/24
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PDF
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bt60
Abstract: siemens im 304 Q1050
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)
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OCR Scan
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5116400BJ
5116400BT
bt60
siemens im 304
Q1050
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA
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OCR Scan
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5116400BJ
QG0hb33
5116400BJ-50/-60/-70
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version
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OCR Scan
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5116400BJ
5116400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117400B
5116400B
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PDF
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bt 33 f
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature •
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OCR Scan
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5116400BJ-50/-60
5117400BJ-50/-60
3116400BJ/BT-50/-60
3117400BJ-50/-60
400BJ-50/-60
400BJ/BT-50/-60
P-TSOPII-26/24-1
GPX05857
bt 33 f
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PDF
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51w4260
Abstract: 51W4265C HM 338 262144-WORD
Text: Contents • L in e U p o f H ita c h i IC M e m o rie s . 7 • P a c k a g e In f o rm a tio n s .
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OCR Scan
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HM5283206
131072-word
32-bit
HM530281R
331776-word
HM538253B/
262144-word
HM538254B
HM538123B
51w4260
51W4265C
HM 338
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PDF
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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OCR Scan
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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OCR Scan
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P-SOJ-26/20-5
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PDF
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Untitled
Abstract: No abstract text available
Text: 5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi 5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 5116400B offers Fast Page Mode
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OCR Scan
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HM5116400B
304-word
ADE-203-367A
440mW/385
mW/358
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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OCR Scan
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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PDF
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HY5116400BT
Abstract: No abstract text available
Text: -HYUNDAI • HY5117400B, 5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5117400B,
HY5116400B
A0-A11)
HY5116400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode 5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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OCR Scan
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HYB5116400BJ/BT-50/-60
HYB5117400BJ/BT-50/-60
HYB3116400BJ
HYB3117400BJ(
HYB5116400
HYB3116400
HYB5117400
HYB3117400
12/1AM
P-SOJ-26/24
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PDF
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Untitled
Abstract: No abstract text available
Text: 5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi 5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 5116400B offers Fast Page Mode
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OCR Scan
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HM5116400B
304-word
ADE-203-367A
mW/385
mW/358
HM511640OB
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PDF
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BT 804
Abstract: No abstract text available
Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13
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OCR Scan
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32-Bit
B166-H6993-X-7600,
BT 804
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16Mbit DRAM (5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin
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OCR Scan
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HB56T432D
304-word
32-bit
ADE-203Rev.
16Mbit
HM5116400BTS/
72-pin
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PDF
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eprom 2904
Abstract: 4502 C DRAM 64kx16
Text: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —
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OCR Scan
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128kx8n
128kX
128kx8Type
HM62W8512A
HM628512A
HM628512
HM674100H
HM671400H
HM62V8128B
HM62V8128
eprom 2904
4502 C
DRAM 64kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: 5116400B / NN5117400B series Fast Page Mode CMOS 4M x 4bit Dynamic RAM NPN a DESCRIPTION The 5116400B / NN5117400B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4 bits. The 5116400B / NN5117400B series is fabricated with advanced CMOS technology and de
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OCR Scan
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NN5116400B
NN5117400B
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PDF
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3165805AT-60
Abstract: Q67100
Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60
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OCR Scan
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3116160BSJ-50
311616QBSJ-60
3116160BSJ-70
3116160BST-50
3116160BST-60
3116160BST-70
3116165BSJ-50
3116165BSJ-60
3116165BSJ-70
3116165BST-50
3165805AT-60
Q67100
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PDF
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