MSM511665-10
Abstract: MSM511665-80
Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M 511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the 511665 is OKI's CMOS silicon gate process technology.
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b724240
MSM511665
536-WORD
16-BIT
MSM511665
W15/I015
Lj7BM240
MSM511665'
VOH-W15/1015
MSM511665-10
MSM511665-80
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICs 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH [ _ ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER [ DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels o f ALC.
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M51166P
M51166P
80dBV
52dBV
20kHz
50dBV
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Untitled
Abstract: No abstract text available
Text: 511665/L Series 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION The Hitachi 511665/HM 511665L are C M O S dynamic R A M organized as 65,536-word x 16-bit. 511665/11665L have realized higher density, higher performance and vari ous functions by employing 0.8 nm C M O S process technol
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HM511665/L
536-Word
16-Bit
HM511665/HM
511665L
16-bit.
HM511665/11665L
511665/HM511665L
HM511665/
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HM511664-8
Abstract: HM511664-10 HM511664 HM511664Z HM511664ZP HM511664JP
Text: HM 511664 S e rie s - Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511664JP Series The Hitachi 511664 are CMOS dynamic RAM orga nized as 65,536-word x 16-bit. 511664 have realized higher density, higher performance and various functions by
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HM511664
536-Word
16-Bit
16-bit.
40-pin
HM511664-8
HM511664-10
HM511664Z
HM511664ZP
HM511664JP
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Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor M SM 511664A/AL_ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/A L is a 65,536-word x 16-bit dynam ic RAM fabricated in OKI’s CM O S silicon gate technology. The M SM 511664A/A L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single metal CM OS. The M SM 511664A /A L is
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MSM511664A/AL_
536-Word
16-Bit
MSM511664A/AL
40-pin
44/40-pin
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Untitled
Abstract: No abstract text available
Text: 511663C Series 65536-word x 16-bit Dynamic RAM HITACHI ADE-203-695 Z Preliminary Rev. 0.0 Dec. 20, 1996 Description The Hitachi H M 511663C Series is a CMOS dynamic RAM organized 65,536-word X 16-bit. H M 511663C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS
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HM511663C
65536-word
16-bit
ADE-203-695
511663C
536-word
16-bit.
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Untitled
Abstract: No abstract text available
Text: FEATURES AND SPECIFICATIONS Reference Information Product Specification: PS-55357-011 Packaging: Tube Mates With: 54780 Type M receptacle Use With: 51166 code key Designed In: Millimeters Electrical Voltage: 500V Current: 1.0A Contact Resistance: 30 milliohms max.
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PS-55357-011
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Untitled
Abstract: No abstract text available
Text: 511667C Series IM EDO DRAM 64-kword x 16-bit 256 refresh HITACHI ADE-203-625A (Z) Rev. 1.0 Dec. 20, 1997 Description The Hitachi H M 511667C Series is a CMOS dynamic RAM organized 65,536-word x 16-bit. H M 511667C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS
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HM511667C
64-kword
16-bit)
ADE-203-625A
511667C
536-word
16-bit.
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PDF
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511664JP
Abstract: HM511664JP HM511664JP8
Text: 511664 S e r ie s - Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION HM 511664JP Series The Hitachi 511664 are C M O S dynamic RAM orga nized as 65,536-word x 16-bit. 511664 have realized higher density, higher performance and various functions by
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HM511664
536-Word
16-Bit
16-bit.
40-pin
511664JP
HM511664JP
HM511664JP8
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PDF
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M511664C
Abstract: No abstract text available
Text: 511664C Series IM FP DRAM 64-kword x 16-bit 256 refresh HITACHI ADE-203-627A (Z) Rev. 1.0 Dec. 20, 1997 Description The Hitachi H M 511664C Series is a CMOS dynamic RAM organized 65,536-word x 16-bit. H M 511664C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS
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HM511664C
64-kword
16-bit)
ADE-203-627A
511664C
536-word
16-bit.
M511664C
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7A07
Abstract: w9109 jcs5 tc511665
Text: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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511665J/Z
TC511665J/Z
7A07
w9109
jcs5
tc511665
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MSM OKI
Abstract: No abstract text available
Text: O K I Semiconductor M S M 5 1 1 6 6 4 A / A L _ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/AL is a n ew generation dynam ic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the M SM 511664A/AL is OKI's CMOS silicon gate process technology.
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MSM511664A/AL
536-Word
16-Bit
MSM511664A/AL
16-bit.
cycles/32ms
MSM OKI
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M51166P
Abstract: ta625 ALC ic
Text: MITSUBISHI SOUND PROCESSOR ICs 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH _ ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels of ALC.
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M51166P
M51166P
80dBV
52dBV
20kHz
50dBV
50dBV
ta625
ALC ic
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51166P
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICs M 51166P QUAD RECORDING/PLAYBACK PREAMPLIFIER WITH ALC PEAK DETECTOR FOR DUAL CASSETTE PLAYER DESCRIPTION The M 51166P is an IC fo r radio double cassette tape players. It has a built-in 4 low-noise preamplifiers and 2 channels o f ALC.
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51166P
51166P
20kHz
50dBV
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PDF
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m511664
Abstract: No abstract text available
Text: O K I semiconductor MSM 511664_ 65,536-WORD x 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the 511664 is OKI's CMOS silicon gate process technology.
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MSM511664
536-WORD
16-BIT
MSM511664
SM511664
m511664
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LH5116H
Abstract: No abstract text available
Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode
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LH5116/H
LH5116H:
24-pin,
600-mil
300-mil
450-mil
LH5116/H
24-pin
LH5116H
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Untitled
Abstract: No abstract text available
Text: TENTATIVE DATA 65,535 WORD x 15 BIT DYNAMIC RAM D E S CRIPTION T b e T C S l l GkW BJL'BZL is the new g e n e ra tio n dyna^nic R A M o rg an ize d 6 5 ,536 w ords by 16 b its. The T C £ t J6 6 4 0 JL /3 Z .L u tilize s T O S H IB A 'S C M O S S ilic c r. p:.te p rocess tech n ology as weii a s ad van ced
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243-11320-15
Abstract: 243-11321-15 243-11020-15 54603-1102 044146 064179 352127-1 044446 054546 064198
Text: AVX Corporation - Interconnect Division 2MM Hard Metric Cross Reference Guide AMP 100141-1 5100141-1 100141-4 5100141-4 100143-1 5100143-1 100145-1 5100145-1 100147-1 5100147-1 100159-1 5100159-1 100159-9 5100159-9 100161-1 5100161-1 100525-3 100525-9 100526-3
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A110-1-TG30
CP2-SA110-G1-TG30
CP2-SB095-1-TG30
CP2-SB095-G1-TG30
CP2-SB110-1-TG30
CP2-SB110-G1-TG30
CP2-SB125-1-TG30
CP2-SB125-G1-TG30
CP2-SC055-1-TG30
CP2-SC055-G1-TG30
243-11320-15
243-11321-15
243-11020-15
54603-1102
044146
064179
352127-1
044446
054546
064198
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HM511664LJ8
Abstract: No abstract text available
Text: 511664/L S eries- Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION 511664JP Series The Hitachi 511664/511664L are CMOS dynamic RAM organized as 65,536-word x 16-bit. 511664/ 511664L have realized higher density, higher perform
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HM511664/L
536-Word
16-Bit
HM511664JP
HM511664/HM511664L
16-bit.
HM511664/
HM511664L
HM511664LJ8
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PDF
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Untitled
Abstract: No abstract text available
Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).
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LH5116/H
LH5116/H
24-PIN
Three-sP-0600)
24-pin,
300-mil
DIP024-P-0300)
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PDF
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smd ND
Abstract: TH101
Text: Globespan HDSL recommendations DigitalTelecom Features EP13 - SMD • Compatible with Globespan chip sets • Good total harmonic distortion characteristics • Optimized design for size and performance • Customization available • Volume production and automated
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51264R
50517R
50711R
50864R
51081R
51074R
51128R
51075R
51197R
51166R
smd ND
TH101
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PDF
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HM511665ZP-8
Abstract: No abstract text available
Text: 511665 Series Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511665JP Series The Hitachi 511665 are C M O S dynamic RA M orga nized as 65,536-word x 16-bit. 511665 have realized higher density, higher performance and various functions by
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HM511665
536-Word
16-Bit
16-bit.
40-pln
40-pin
HM511665ZP-8
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PDF
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hitachi ras 202 ci
Abstract: HM511665ZP-8 HM511665JP-8 hm511665jp8
Text: 511665 Series Preliminary 65,536-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION 511665JP Series The Hitachi 511665 are CMOS dynamic RAM orga nized as 65,536-word x 16-bit. 511665 have realized higher density, higher performance and various functions by
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OCR Scan
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HM511665
536-Word
16-Bit
16-bit.
40-pin
hitachi ras 202 ci
HM511665ZP-8
HM511665JP-8
hm511665jp8
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PDF
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FSP 30
Abstract: No abstract text available
Text: 511666 Series Preliminary 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION 511666JP Series The Hitachi 511666 are CMOS dynamic RAM orga nized as 65,536-word x 16-bit. 511666 have realized higher density, higher performance and various functions by
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HM511666
536-Word
16-Bit
16-bit.
HM511666
40-pin
FSP 30
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PDF
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