CY7C1051DV33-15ZSXE
Abstract: AN1064 CY7C1051DV33 CY7C1051DV33-10BAXI
Text: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Features Functional Description The CY7C1051DV33[2] is a high performance CMOS Static RAM organized as 512 K words by 16 bits. • Temperature ranges ❐ Industrial: –40 °C to 85 °C
|
Original
|
CY7C1051DV33
CY7C1051DV33
CY7C1051DV33-15ZSXE
AN1064
CY7C1051DV33-10BAXI
|
PDF
|
x2004
Abstract: XICOR x2004 X20C04
Text: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to
|
Original
|
X20C04
X20C04
x2004
XICOR x2004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits. ■ High speed
|
Original
|
CY7C1051DV33
CY7C1051DV33
16-bits.
I/O15)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY7C1051DV33 8-Mbit 512 K x 16 Static RAM 8-Mbit (512K x 16) Static RAM Functional Description Features • Temperature ranges ❐ –40 °C to 85 °C The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits. ■ High speed
|
Original
|
CY7C1051DV33
CY7C1051DV33
16-bits.
I/O15)
|
PDF
|
XICOR x2004
Abstract: X2004 X20C04
Text: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to
|
Original
|
X20C04
X20C04
XICOR x2004
X2004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: U630H04 HardStore 512 x 8 nvSRAM F Packages: Features F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 ns Access Time F 12 ns Output Enable Access Time F Unlimited Read and Write to SRAM F Hardware STORE Initiation STORE Cycle Time < 10 ms
|
Original
|
U630H04
PDIP28
M3015
U630H04
D-01109
D-01101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: U630H04 Preliminary HardStore 512 x 8 nvSRAM F Packages: Features F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation
|
Original
|
U630H04
M3015
PDIP28
PDIP28
D-01109
D-01101
|
PDF
|
ZMD cross reference
Abstract: No abstract text available
Text: U633H04 Preliminary PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to
|
Original
|
U633H04
D-01109
D-01101
ZMD cross reference
|
PDF
|
PDIP24
Abstract: U636H04
Text: U636H04 Preliminary PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to
|
Original
|
U636H04
M3015
PDIP24
D-01109
D-01101
PDIP24
U636H04
|
PDF
|
of RAS 0510 of 5 volts
Abstract: No abstract text available
Text: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The
|
Original
|
X20C05
X20C05
28-Lead
32-Pad
32-Lead
of RAS 0510 of 5 volts
|
PDF
|
Untitled
Abstract: No abstract text available
Text: U633H04 PowerStore 512 x 8 nvSRAM Features Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 ns Access Time F 12 ns Output Enable Access Time F I = 15 mA at 200 ns Cycle Time F Unlimited Read and Write to SRAM F Automatic STORE to EEPROM
|
Original
|
U633H04
U633H04
D-01109
D-01101
|
PDF
|
of RAS 0510 of 5 volts
Abstract: AN56 X20C04 X20C05 X20C16
Text: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The
|
Original
|
X20C05
X20C05
9-A-0050
of RAS 0510 of 5 volts
AN56
X20C04
X20C16
|
PDF
|
AN56
Abstract: X20C04 X20C05 X20C16
Text: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The
|
Original
|
X20C05
X20C05
AN56
X20C04
X20C16
|
PDF
|
AN56
Abstract: X20C04 X20C05 X20C16
Text: APPLICATION NOTE A V A I L A B L E AN56 X20C05 X20C05 4K 512 x 8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C05 is a 512 x 8 NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The
|
Original
|
X20C05
X20C05
AN56
X20C04
X20C16
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This is a partial data sheet. F or com plete data sheet, see Section 8, Modules. CYM1821 s CYPRESS SEMICONDUCTOR 16K x 32 Static RAM Module Features Functional Description • High-density 512-kbit SRAM module T he CYM1821 is a high-performance 512-kbit static RAM module organized as
|
OCR Scan
|
CYM1821
512-kbit
CYM1821
1821PZ-12
821PZ-15
1821PZ-20
1821PZ-25
1821PZ-35
1821PZ-45
|
PDF
|
A16Q2
Abstract: No abstract text available
Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( Am Hi-CMOS process
|
OCR Scan
|
HM62W8512B
512-kword
ADE-203-904B
525-mil
400-milTSOP
A16Q2
|
PDF
|
YC 2604
Abstract: No abstract text available
Text: 128K X 8 64K X 8 CMOS DUAL-PORT STATIC RAM MODULE Integrated Device Technology, Inc. IDT7M1001 IDT7M1003 FEATURES DESCRIPTION: • High-density 1M /512 K C M O S Dual-Port Static RAM T h e ID T 7 M 1001 /ID T 7 M 1003 is a 128K x 8/6 4K x 8 high speed C M O S D ual-Port Static RA M m odule constructed on a
|
OCR Scan
|
IDT7M1001
IDT7M1003
64-pin
IDT7M1001/1003
128K/64K
YC 2604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process
|
OCR Scan
|
HM62W8512B
512-kword
ADE-203-904B
525-mil
400-mil
time8512B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.
|
OCR Scan
|
HM62V8512B
512-kword
ADE-203-905
525-mil
400-mil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process technology.
|
OCR Scan
|
HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
|
PDF
|
628512blp
Abstract: No abstract text available
Text: HM628512BI Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 jam Hi-CMOS process technology.
|
OCR Scan
|
HM628512BI
512-kword
ADE-203-935A
525-mil
400-mil
600-mil
628512blp
|
PDF
|
HM628512ALP-7
Abstract: HM628512ALP-5 HM628512ALP-5SL HM628512ALFP-7 A17a DP-32 HM628512A HM628512ALFP-5 HM628512ALFP-5SL HM628512ALP-7SL
Text: HM628512A Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process technology. The
|
OCR Scan
|
HM628512A
512-kword
ADE-203-640B
525-mil
400-mil
600-mil
HM628512ALP-7
HM628512ALP-5
HM628512ALP-5SL
HM628512ALFP-7
A17a
DP-32
HM628512ALFP-5
HM628512ALFP-5SL
HM628512ALP-7SL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process
|
OCR Scan
|
HM62W8512B
512-kword
ADE-203-904
525-mil
400-mil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.
|
OCR Scan
|
HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
|
PDF
|
