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    512KBIT Search Results

    512KBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25XE512C-XMHN-T Renesas Electronics Corporation 512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current Visit Renesas Electronics Corporation
    AT25XE512C-SSHN-B Renesas Electronics Corporation 512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current Visit Renesas Electronics Corporation
    AT25XE512C-SSHN-T Renesas Electronics Corporation 512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current Visit Renesas Electronics Corporation
    AT25XE512C-XMHN-B Renesas Electronics Corporation 512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current Visit Renesas Electronics Corporation
    AT25XE512C-MAHN-T Renesas Electronics Corporation 512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current Visit Renesas Electronics Corporation
    SF Impression Pixel

    512KBIT Price and Stock

    ROHM Semiconductor BR24G512F-5AE2

    EEPROM SERIAL EEPOROM 512KBIT 1MHZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24G512F-5AE2 Reel 2,500
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    ROHM Semiconductor BR24G512FJ-5AE2

    EEPROM SERIAL EEPROM 512KBIT C BUS
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    TTI BR24G512FJ-5AE2 Reel 2,500
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    ROHM Semiconductor BR25H512F-5ACE2

    EEPROM SERIAL EEPROM 512KBIT
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    TTI BR25H512F-5ACE2 Reel 2,500
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    ROHM Semiconductor BR25H512FVM-5ACTR

    EEPROM 512KBIT SERIAL EEPROM
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    TTI BR25H512FVM-5ACTR Reel 3,000
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    ROHM Semiconductor BR24G512FVT-5AE2

    EEPROM SERIAL EEPROM
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    TTI BR24G512FVT-5AE2 Reel 3,000
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    512KBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23A512-I

    Abstract: 23A512 23LC512-I 23LC512
    Text: 23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Number VCC Range Dual I/O SDI Quad I/O (SQI) Max. Clock Frequency 23A512 1.7-2.2V Yes Yes 20 MHz SN, ST, P 23LC512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Packages Features:


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    PDF 23A512/23LC512 512Kbit 23A512 23LC512 32-byte DS25155A-page 23A512-I 23LC512-I

    Untitled

    Abstract: No abstract text available
    Text: 8 Bit PLCC EPROMs 512Kbit and smaller UniROM User's Manual 84


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    PDF 512Kbit

    A25L05PT

    Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
    Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date


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    PDF A25L20P/A25L10P/A25L05P 512Kbit, 85MHz 512Kbit 203mm A25L05PT A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P

    LH28F800BVE-BTL90

    Abstract: LHF80V11
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVE-BTL90 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V11) Issue Date: September 20, 1999 sharp LHF80V11 ●Handle this document carefully for it contains material protected by international copyright law.


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    PDF LH28F800BVE-BTL90 512Kbit LHF80V11) LHF80V11 LH28F800BVE-BTL90 LHF80V11

    LH28F800BVHE-BV85

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVHE-BV85 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V37) Spec No.: EL109096A Issue Date: September 27, 1999 sharp LHF80V37 ●Handle this document carefully for it contains material protected by international copyright law.


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    PDF LH28F800BVHE-BV85 512Kbit LHF80V37) EL109096A LHF80V37 LH28F800BVHE-BV85

    FM24C512

    Abstract: FM24C512-G FM24V05
    Text: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    PDF FM24C512 512Kb 512Kbit FM24C512 512-kilobit FM24C512, FM24C512-G A60003G1 FM24V05 FM24C512-G

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C316162V 200/183/166 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 V54C316162V -5 -55 -6 Unit 200 183 166 MHz Latency 3 3 3 clocks Cycle Time tCK 5 5.5 6 ns Access Time (tAC) 5 5.3 5.5 ns Clock Frequency (tCK)


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    PDF V54C316162V 512Kbit V54C316162V

    Untitled

    Abstract: No abstract text available
    Text: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)


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    PDF IS25CD512/010 IS25LD020 512Kbit/1 512Kbit IS25CD512: IS25CD010: IS25LD020: 512Kb 32KByte

    Untitled

    Abstract: No abstract text available
    Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage


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    PDF M25P32 50MHz 32Mbit 512Kbit) 32Mbit) 2016h)

    ML2250

    Abstract: ML22Q54
    Text: 1 ML2250 Series PRODUCT INTRODUCTION SHEET January 22, 2004 VOICE SYNTHESIS LSIs WITH 2 CHANNEL MIXING Description ML2250 series are voice synthesizer LSIs with 512kbit to 6MBit internal ROM plus 2-channel mixing playback function. The volume of each channel can be controlled independently. A “phrase control table” in ROM allows preprogramming of individual phrases to form a sentence


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    PDF ML2250 512kbit 14-bit ML22Q54

    V54C316162V

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C316162V V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3 5.5


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    PDF V54C316162V 512Kbit V54C316162V

    vdfpn8

    Abstract: M25P16 VDFPN8 8x6mm MLP8 package spi flash m25pxx VDFPN8 package MLP8 M25PXX VDFPN M25P application note
    Text: M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical)


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    PDF M25PXX 512Kbit 32Mbit 512Kbit) 32Mbit) 40MHz 50MHz 20xxh) vdfpn8 M25P16 VDFPN8 8x6mm MLP8 package spi flash m25pxx VDFPN8 package MLP8 M25PXX VDFPN M25P application note

    ice27c512

    Abstract: No abstract text available
    Text: ICE27C512 512kbit 64KX8 OTP EPROM Description The ICE27C512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 5V power supply in normal read mode operation. Any byte can be accessed in less than 70ns. The ICE27C512 typically consumes 10mA , standby


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    PDF ICE27C512 512kbit 64KX8) ICE27C512

    V54C316162VC

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C316162VC V54C316162VC 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3


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    PDF V54C316162VC 512Kbit V54C316162VC L52-3775

    6755w

    Abstract: No abstract text available
    Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­


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    PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 6755w

    M27G512

    Abstract: 27G512
    Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 64K words with 8 bits per word. Any byte can be


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    PDF FM27C512-L 288-Bit FM27C512 512Kbit, 256Kb M27G512 27G512

    Untitled

    Abstract: No abstract text available
    Text: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the


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    PDF 48F512 48F512is 512Kbit s48F512 MD400062/A 48F512

    27C512N

    Abstract: No abstract text available
    Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into


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    PDF FM27C512L FM27C512L 288-Bit 64Kx8) FM27C512 512Kbit, 27C512 256Kb 27C512N

    CAT71C256L-85

    Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
    Text: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA


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    PDF T-90-30 CAT28F010 12SKx8) 30mA/100 CAT28F512 512KBit 64Kx8) 50mA/500pA CAT28F512V5 CAT71C256L-85 cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 4Q91

    1N914

    Abstract: A14C N28B NM27C512 VA32A
    Text: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or­


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    PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 512Kb 150ns 1N914 A14C N28B NM27C512 VA32A

    27C512N

    Abstract: No abstract text available
    Text: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into


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    PDF FM27C512L FM27C512L 288-Bit 64Kx8) FM27C512 512Kbit, 256Kb 27C512N

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM6375 / M SM 6374 1 MSM6373 I MSM6372 1M bit/512Kbit/256K bit M A SK ROM SPEECH SYNTHESIZER G EN ERA L DESCRIPTION The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech processor circuit in conjunction w ith a built-in M ASK ROM fo r speech data storage. Since it has a built-in 12-bit DA


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    PDF MSM6375 MSM6373 MSM6372 it/512Kbit/256K 12-bit MSM6376

    Untitled

    Abstract: No abstract text available
    Text: July 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming V oltage + 1 2.7 5V ■ Typical programm ing tim e 50ns T h e F M 2 7 L V 5 1 2 is a low voltage, low-power 512Kbit, 3.3V-only


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    PDF FM27LV512L 288-Bit FM27LV512 512Kbit, 150ns, 512Kb 150ns

    M6378A

    Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
    Text: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family


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    PDF 128Kbit 256Kbit 512Kbit 63P74 MSM6376 MSM6295 MSM5205 MSM6585 MSM6586 MSM6587 M6378A MSM6388 MSM62* ADPCM MSM63* ADPCM