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    Octavo Systems LLC OSD3358-512M-BSM

    IC MODULE CORTEX-A8 1GHZ 512MB
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    DigiKey OSD3358-512M-BSM Tray 1,711 1
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    Bristol Electronics OSD3358-512M-BSM 21,812
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    Delta Electronics Inc AFB0512MB

    FAN AXIAL 50X15MM 12VDC WIRE
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    DigiKey AFB0512MB Bulk 1,391 1
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    Neutron USA AFB0512MB 50
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    Octavo Systems LLC OSD32MP157C-512M-BAA

    SIP ARM CORTEX STM32MP157C
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    DigiKey OSD32MP157C-512M-BAA Tray 1,344 1
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    Avnet Silica OSD32MP157C-512M-BAA 31 Weeks 130
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    Orion Fans OD8025-12MB

    FAN AXIAL 80X25MM 12VDC WIRE
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    DigiKey OD8025-12MB Box 1,094 1
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    Newark OD8025-12MB Bulk 2 1
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    Interstate Connecting Components OD8025-12MB 15
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    Powell Electronics OD8025-12MB 13 1
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    Neutron USA OD8025-12MB
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    TestEquity LLC OD8025-12MB
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    Orion Fans OD8015-12MB

    FAN AXIAL 80X15MM 12VDC WIRE
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    DigiKey OD8015-12MB Box 943 1
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    Newark OD8015-12MB Bulk 37 1
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    Powell Electronics OD8015-12MB 14 1
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    Master Electronics OD8015-12MB 636
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    Neutron USA OD8015-12MB
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    TestEquity LLC OD8015-12MB
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    512MB Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    512MBA000199AAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBA000199AAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBA000230AAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBA000230AAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBA000230BAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBA000230BAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBB000132AAG Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF
    512MBB000132AAGR Silicon Labs Crystals, Oscillators, Resonators - Pin Configurable/Selectable Oscillators - XTAL OSC XO 3.3V 6SMD Original PDF

    512MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ64V8J TS64MLQ64V8J 64bits DDR2-800 64Mx8bits 240-pin

    AS4SD32M16

    Abstract: No abstract text available
    Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16

    N25Q256

    Abstract: No abstract text available
    Text: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection


    Original     		PDF 512Mb, N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x 256Mb 09005aef84752721 N25Q256

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    NT512T64U88A0BY-37B

    Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
    Text: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module


    Original     		PDF NT512T64U88A0F NT512T64U88A0B NT512T64U88A0BY NT1GT64U8HA0F NT1GT64U8HA0B NT1GT64U8HA0BY 512MB: 240pin 64Mx8 240-pin NT512T64U88A0BY-37B NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A

    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632D 512Mbit 16bit K4S511632D

    DDR2-400

    Abstract: DDR2-533 K4T56043QF K4T56083QF
    Text: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF

    M378T2953CZ3

    Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
    Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 240pin 512Mb 64/72-bit 32Mx64 M378T3354CZ3 M378T3354CZ0 K4T51163QC M378T2953CZ3 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108

    DDR400

    Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
    Text: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM


    Original     		PDF 256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC

    K4H560838E

    Abstract: DDR333
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit K4H560838E DDR333

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


    Original     		PDF NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be

    mt48lc32m16a2p-75

    Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
    Text: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant


    Original     		PDF 512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 192-cycle 09005aef809bf8f3/Source: 09005aef80818a4a 512MbSDRAM mt48lc32m16a2p-75 MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c

    dm 533

    Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
    Text: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 512MB, 240pin 512Mb 72-bit M393T6553BG0-CD5/CC 512MB 64Mx72 64Mx8 K4T51083QB) dm 533 K4T5108 M393T5750BS0-CD5 DDR2-533

    Untitled

    Abstract: No abstract text available
    Text: M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M381L6423DTL 184pin 512MB 64Mx72 32Mx72 32Mx8 72-bit

    M368L6523DUS

    Abstract: L2923D
    Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64/72-bit 64Mx8 K4H510838D-U* M368L6523DUS L2923D

    K4H511638B-TCCC

    Abstract: K4H510838B-TCCC DDR333 DDR400 K4H511638B-T
    Text: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics


    Original     		PDF 512Mb DDR400 200MHz 400Mbps K4H511638B-TCCC K4H510838B-TCCC DDR333 K4H511638B-T

    K4T51043QB-GCCC

    Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
    Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing


    Original     		PDF 512Mb K4T51043QB-GCCC K4T51043QB-GCE6 K4T51043QB-GLE6

    MVME5110

    Abstract: MVME51105E-2263 MVME5100 MVME51105E-2161 MVME51105E-2163 MVME5107-2163 MVME51105E-2261 IPMC7616E-002 MVME51005E-0161 SCANBE ejector
    Text: D ATA S H E E T MPC7410, MPC750 or MPC755 microprocessor with 32KB/32KB L1 cache Up to 2MB of secondary backside cache 100 MHz frontside bus Up to 512MB of on-board ECC SDRAM – expandable up to 1GB with optional RAM500 memory expansion modules 17MB flash memory


    Original     		PDF MPC7410, MPC750 MPC755 32KB/32KB 512MB RAM500 P1386 32/64-bit MVME5100 264MB/s MVME5110 MVME51105E-2263 MVME51105E-2161 MVME51105E-2163 MVME5107-2163 MVME51105E-2261 IPMC7616E-002 MVME51005E-0161 SCANBE ejector

    Untitled

    Abstract: No abstract text available
    Text: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History


    Original     		PDF M383L6423DTS 184pin 512MB 64Mx72 32Mx72 32Mx8 72-bit

    ddr266

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification Revision 1.1 Rev. 1.1 August 2003 DDR SDRAM 512Mb B-die (x4, x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review


    Original     		PDF 512Mb K4H511632B ddr266

    MVME2434

    Abstract: MVME2434-1 MVME2400 MVME2400 SERIES MVME2434-3 MK48T59 SCANBE connector 32KB VME PMC VME COnnector
    Text: KEY FEATURES MPC750 32-bit microprocessor 32KB/32KB L1 cache 1MB backside L2 cache 256MB or 512MB of on-board ECC SDRAM Up to 1MB capacity for on-board firmware or user-specified requirements The MVME2400 processor modules pack optimum levels of flexibility and performance


    Original     		PDF MPC750 32-bit 32KB/32KB 256MB 512MB MVME2400 MPC750 MVME2400-D7 MVME2434 MVME2434-1 MVME2400 SERIES MVME2434-3 MK48T59 SCANBE connector 32KB VME PMC VME COnnector

    7F7F7F0B00000000

    Abstract: PC2-5300 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16
    Text: NT256T64UH4B0FN / NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die Features • Performance:


    Original     		PDF NT256T64UH4B0FN NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 512MB: PC2-4200 PC2-5300 PC-6400 DDR2-533/667/800 32Mx16/64Mx8 7F7F7F0B00000000 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16