Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of
|
Original
|
VL47D5263D-K0/K9/F8S
512Mx64
204-PIN
VL47D5263D
256Mx8
204-pin
204-pin,
PC3-12800,
PC3-10600,
|
PDF
|
DDR3-1066
Abstract: DDR3-1333 PC3-10600
Text: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of
|
Original
|
VL47B5263B-K9S/F8S/E7S-IU
512MX64
VL47B5263B
256Mx8
204-pin
204-pin,
in-li00
DDR3-1066
DDR3-1333
PC3-10600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists
|
Original
|
VL47B5463E-K9/F8/E7S
512Mx64
204-PIN
VL47B5463E
512Mx8
204-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of
|
Original
|
VL47D5263D-K0/K9/F8S
512Mx64
204-PIN
VL47D5263D
256Mx8
204-pin
204-pin,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of
|
Original
|
VL47B5263B-K9S/F8S/E7S-IU
512MX64
VL47B5263B
256Mx8
204-pin
204-pin,
in-li00
|
PDF
|
DDR3 soDIMM pinout 204 pins
Abstract: DDR3 SO-DIMM pinout DDR3-1066 DDR3-1333 PC3-10600 4GB 512MX64 DDR3 SDRAM MODULE DDR3 soDIMM 240 pinout
Text: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists
|
Original
|
VL47B5463E-K9/F8/E7S
512Mx64
204-PIN
VL47B5463E
512Mx8
204-pin
204-pin,
DDR3 soDIMM pinout 204 pins
DDR3 SO-DIMM pinout
DDR3-1066
DDR3-1333
PC3-10600
4GB 512MX64 DDR3 SDRAM MODULE
DDR3 soDIMM 240 pinout
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM
|
Original
|
VL47B5263A-K9S/F8S/E7S-I
512MX64
VL47B5263A
256Mx8
204-pin
204-pin,
|
PDF
|
850C
Abstract: PC3-10600
Text: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM
|
Original
|
VL47B5263A-K9S/F8S/E7S-I
512MX64
VL47B5263A
256Mx8
204-pin
204-pin,
Fas00
850C
PC3-10600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B5263A-F8SD-I REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
|
Original
|
VL47B5263A-F8SD-I
512Mx64
204-PIN
VL47B5263A
256Mx8
204-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG564128FH8N0UU May 13, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8N0KA 512Mx64 4GB , DDR3, 240-pin Unbuffered DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8N06B
|
Original
|
SG564128FH8N0UU
SG564128FH8N0KA
512Mx64
240-pin
256Mx8
DDR3-800-555,
PC3-6400
SG564128FH8N06B
|
PDF
|
K/DDR31066-666
Abstract: No abstract text available
Text: SG564128FH8NZUU February 23, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8NZKA 512Mx64 4GB , DDR3, 204-pin Unbuffered SO-DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8NZ6B
|
Original
|
SG564128FH8NZUU
SG564128FH8NZKA
512Mx64
204-pin
256Mx8
DDR3-800-555,
PC3-6400
SG564128FH8NZ6B
K/DDR31066-666
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
|
Original
|
SG564128FG8NZUU
SG564128FG8NZDB
512Mx64
200-pin
256Mx8
DDR2-400-333,
PC2-3200
SG564128FG8NZDG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG564128FG8N0UU January 11, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8N0DB 512Mx64 4GB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
|
Original
|
SG564128FG8N0UU
SG564128FG8N0DB
512Mx64
240-pin
256Mx8
DDR2-400-333,
PC2-3200
SG564128FG8N0DG
|
PDF
|
MIL-I-46058C
Abstract: PC3-10600 204 pin so-DIMM DDR3 connector DDR3 sodimm 4gb samsung
Text: Product Specifications PART NO: VL47B5263Z-R9S/R8S/R7S-HS REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM HEAT SPREADER AND CONFORMAL COATING Description: The VL47B5263Z is a 512M X 64 DDR3 SDRAM high density SODIMM. This memory module
|
Original
|
VL47B5263Z-R9S/R8S/R7S-HS
512MX64
VL47B5263Z
256Mx8
204-pin
204-pin,
MIL-I-46058C
PC3-10600
204 pin so-DIMM DDR3 connector
DDR3 sodimm 4gb samsung
|
PDF
|
|
TH20594MC1.4
Abstract: 577b
Text: Product Specifications 3$57 12 VL47B5263A-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM WITH BGA DRAM COMPONENTS UNDER-FILLED Description 7KH 9/%$ LV D 0[ ''5 6'5$0 KLJK GHQVLW\ 62',00 7KLV PHPRU\ PRGXOH FRQVLVWV RI
|
Original
|
VL47B5263A-K9S/F8S/E7S-IU
512MX64
TH20594MC1.4
577b
|
PDF
|
K4T4G274QA-TC
Abstract: K4T4G274QA 512Mx64 SODIMM ddr2 DDR2-533 DDR2-667 DDR2-800 512mx64 4gb M470T5267AZ K4T4G
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 2Gb A-die 64-bit Non-ECC 83DSP with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
200pin
64-bit
83DSP
512Mbx8
512Mx64
M470T5267AZ
K4T4G274QA
K4T4G274QA-TC
K4T4G274QA
SODIMM ddr2
DDR2-533
DDR2-667
DDR2-800
512mx64 4gb
K4T4G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort
|
Original
|
NT2GC64B
NT4GC64B
NT8GC64B
1024M
256Mx16
512Mx8
204-Pin
256Mx64
256Mx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NT2GC64B C H4C0PS / NT4GC64B(C)88C0NS / NT8GC64B(C)8HC0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600/1866 256Mx16 and 512Mx8 SDRAM C-Die Features •Performance:
|
Original
|
NT2GC64B
NT4GC64B
88C0NS
NT8GC64B
1024M
PC3-14900
256Mx16
512Mx8
204-Pin
|
PDF
|
abs 920 grade
Abstract: DDR2-533 DDR2-667 DDR2-800 JESD79-2E
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 2Gb A-die 64-bit Non-ECC 83DSP with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
200pin
64-bit
83DSP
512Mbx8
512Mx64
M470T5267AZ
K4T4G274QA
abs 920 grade
DDR2-533
DDR2-667
DDR2-800
JESD79-2E
|
PDF
|
NT4GC64B8HG0NS-CG
Abstract: PC3-12800 NT4GC64C8HG0NS-CG nanya 4gb DDR3 SODIMM NT2GC64C88G0NS-DI NT2GC64C88G0NS-CG
Text: NT2GC64B C 88G0NS / NT4GC64B(C)8HG0NS 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: Speed Sort PC3-10600 PC3-12800 -CG -DI Unit DIMM CAS Latency 9 11 fck – Clock Freqency
|
Original
|
NT2GC64B
88G0NS
NT4GC64B
PC3-10600
PC3-12800
DDR3-1333/1600
256Mx8
204-Pin
NT4GC64B8HG0NS-CG
NT4GC64C8HG0NS-CG
nanya 4gb DDR3 SODIMM
NT2GC64C88G0NS-DI
NT2GC64C88G0NS-CG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M2F X 4G64CB88B7(H)N / M2F(X)8G64CB8HB5(9)N 4GB: 512M x 64 / 8GB: 1024M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3-10600 PC3-12800 PC3-12800 -CG -DG -DI Unit DIMM CAS Latency 9
|
Original
|
4G64CB88B7
8G64CB8HB5
1024M
PC3-10600
PC3-12800
512Mx8
PC3-10600
240-Pin
|
PDF
|
NT2GC64B88G0
Abstract: 12PER NT2GC64B
Text: NT2GC64B C 88G0(1)NS / NT4GC64B(C)8HG0(1)NS 2GB: 256M x 64 / 4GB: 512M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: Speed Sort PC3(L)-10600 PC3(L)-12800 -CG -DI Unit DIMM CAS Latency
|
Original
|
NT2GC64B
NT4GC64B
DDR3-1333/1600
256Mx8
204-Pin
256Mx64
512Mx64
667MHz/800MHz
SSTL-15
NT2GC64B88G0
12PER
|
PDF
|
H5TQ2G63FFR-RDC
Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Text: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC
|
Original
|
256Mx8
H5TQ2G83EFR-RDC
78ball)
H5TQ2G83CFR-PBC
H5TQ2G83EFR-PBC
H5TQ2G83CFR-H9C
H5TQ2G83EFR-H9C
H5TQ2G63FFR-RDC
H5TQ4G63MFRPBC
H5TC8G83AMR-PBA
HMT351U7EFR8C-PB
H5TQ2G63DFR-PBC
|
PDF
|
NT4GC64B88B0NS-DI
Abstract: NT2GC64B PC3L-12800 NT4GC64B NT2GC64CH4B0PS-DI 88B0NS 512Mx16 NT4GC64C88B0NS-DI NT2GC64BH4B0PS-DI NT8GC64B8HB0NS-DI
Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600
|
Original
|
NT2GC64B
NT4GC64B
88B0NS
NT8GC64B
1024M
256Mx16
512Mx8
204-Pin
256Mx64
NT4GC64B88B0NS-DI
PC3L-12800
NT2GC64CH4B0PS-DI
512Mx16
NT4GC64C88B0NS-DI
NT2GC64BH4B0PS-DI
NT8GC64B8HB0NS-DI
|
PDF
|