HM511000J
Abstract: No abstract text available
Text: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of
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HB56D136B/S
36-Bit
514400JP/AJ)
HM511000JP)
HM511000ATS)
HB56D136SB/
72-pin
HB56D136B/
HB560136B/S
HM511000J
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S-10
Abstract: No abstract text available
Text: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by
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THM321020S
TC5144Q0J
THM321020
THM321020S-80,
THM321020SG-80,
V0H-0Q31
S-10
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511000a
Abstract: No abstract text available
Text: HB56D236B/SB Series-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 2 3 6 B /S B /B S /S B S is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM H M 514400JP /A J sealed in SOJ package and 8 pieces of
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HB56D236B/SB
152-Word
36-Bit
514400JP
511000JP)
11000A
72-pin
511000a
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514400J
Abstract: 511000a
Text: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An
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HB56D236B-8
HB56D236B-10
HB56D236B-12
152-Word
36-Bit
514400JP)
511000AJP)
72-pin
D236B-8/10/12----------------------------
514400J
511000a
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514400j
Abstract: 236b 511000a
Text: HB56D236B Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • PIN OUT ■ DESCRIPTION T h e H B56D 236B is a 2M x 36 dynam ic R AM m odule, m ounted 16 pieces o f 4 M bit DRAM H M 514400JP sealed in SOJ package and 8 pieces o f 1 M bit DRAM
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HB56D236B
152-Word
36-Bit
514400JP)
511000AJP)
72-pin
514400j
236b
511000a
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HM514400
Abstract: 5a6t hm514400jp8 HM514400ZP8 HM514400-10 HM514400JP-10 514100Z
Text: HM514400 Series 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION H M 514400JP Series The Hitachi HM514400 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514400 has realized higher density, higher performance and various func
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HM514400
576-Word
20-pin
514400JP
514400Z
5a6t
hm514400jp8
HM514400ZP8
HM514400-10
HM514400JP-10
514100Z
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SG-10
Abstract: SG-80 TC514400J THM402040SG-80 THM402040SG KA5s
Text: w m am P H ^ WKÊKBÊ m i •!11:? m Sfili! 2 ,0 9 7 ,1 5 2 W O R D S x 4 0 BIT D Y N A M I C RAM m m r f l; i i n t t i H PRELIMINARY MODULE DESCRIPTION T he THM 402020SG is a 2,097,152 w ards by 40 b its dynam ic HAM m odule which assem bled 20 pcs of T C 514400J on the printed circuit board.
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THM402020SG
TC514400J
THM402020
SG-80
SG-10
100ns
150ns
180ns
SG-10
THM402040SG-80
THM402040SG
KA5s
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514400
Abstract: V7777 M514400
Text: 514400JP/ZP-8/10/12 4 Megabit DRAM 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi H M 514400 is a C M O S dynam ic RAM organized 1,048,576 word x 4 bit. H M 514400 has realized higher density, higher perform ance and various functions by employing 0.6 /<m C M O S
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HM514400JP/ZP-8/10/12
576-Word
20-pin
HM5I440QJP
514100L
128ms
514400
V7777
M514400
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IRF 829 equivalent
Abstract: JCA Technology
Text: HB56D232B Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232B is a 2M x 32 dynamic RAM module, mounted 16 pieces of 4Mbit DRAM 514400JP sealed in SOJ package. An outline of the HB56D232B is 72-pin single in-line package. Therefore, the HB56D232B makes high
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HB56D232B
152-Word
32-Bit
HM514400JP)
72-pin
IRF 829 equivalent
JCA Technology
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PDF
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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siemens FLH
Abstract: 514400 514400J-10 514400J-80 514400J
Text: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80
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023SbOS
siemens FLH
514400
514400J-10
514400J-80
514400J
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Untitled
Abstract: No abstract text available
Text: HB56D132 S e rie s -1,048,576-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT The H B56D 132B R /SBR is a 1M x 32 dynamic R A M mod ule, mounted 8 pieces of 4 Mbit DRAM 514400JP/AJ sealed in S O J package. An outline of the HB56D 132BR/
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HB56D132
576-Word
32-Bit
HM514400JP/AJ)
HB56D
132BR/
72-pin
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PDF
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Siemens HYB 41256-12
Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
Text: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347
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511000B-60
511000B-70
511000B-80
511000BJ-60
511000BJ-70
511000BJ-80
511000BJL-60
511000BJL-70
511000BL-60
511000BL-70
Siemens HYB 41256-12
41256-12 dram
41256-15
Q67100-Q539
41256-12
514400J-10
514256BZ-70
514400J-80
511000BZL-70
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514400j
Abstract: 514400J-10 514400J-80
Text: SIEM EN S 1M X 4-Bit Dynamic RAM HYB 514400-80/-10 Preliminary • • 1 048 576 words by 4-bit organization Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80 100 ns access time 190 ns cycle time (HYB 514400-10) • Fast page mode cycle time
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Untitled
Abstract: No abstract text available
Text: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The 514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4
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TC514400J/Z
TC514400J/Zâ
l7240
T-46-23-18
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514400J
Abstract: No abstract text available
Text: 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION * This is advanced information and specifications are subject to change without notice. The 514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 514400J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514400J/Z
TC514400J/Z.
TC514400J/Zâ
514400J
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56D236B/SB Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The RAM H B 5 6 D 2 3 6 B /S B /B S /S B S m odule, m ounted 16 is a pieces 2M of x 36 4 M bit dynam ic DRAM H M 5 1 4 4 0 0 J P /A J sea led in S O J p ac k a g e an d 8 p ieces of
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HB56D236B/SB
152-Word
36-Bit
72-pin
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PDF
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HM511000
Abstract: No abstract text available
Text: ^ 6 5 6 1 3 6 6 S e r i e s - 1,048,576-W ord x 36-B it High D ensity Dynam ic RAM M odule • DESCRIPTIO N ■ PIN O U T The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM 514400JP sealed in SOJ package and 4 pieces of
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OCR Scan
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HB56D136B
HM514400JP)
HM511000AJP)
72-pin
HM511000
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PDF
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