HM511000J

Contextual Info: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy­ namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of

S-10

Contextual Info: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by

511000a

Contextual Info: HB56D236B/SB Series-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 2 3 6 B /S B /B S /S B S is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM H M 514400JP /A J sealed in SOJ package and 8 pieces of

514400J

Abstract: 511000a
Contextual Info: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An

514400j

Abstract: 236b 511000a
Contextual Info: HB56D236B Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • PIN OUT ■ DESCRIPTION T h e H B56D 236B is a 2M x 36 dynam ic R AM m odule, m ounted 16 pieces o f 4 M bit DRAM H M 514400JP sealed in SOJ package and 8 pieces o f 1 M bit DRAM

HM514400

Abstract: 5a6t hm514400jp8 HM514400ZP8 HM514400-10 HM514400JP-10 514100Z
Contextual Info: HM514400 Series 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION H M 514400JP Series The Hitachi HM514400 is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514400 has realized higher density, higher performance and various func­

SG-10

Abstract: SG-80 TC514400J THM402040SG-80 THM402040SG KA5s
Contextual Info: w m am P H ^ WKÊKBÊ m i •!11:? m Sfili! 2 ,0 9 7 ,1 5 2 W O R D S x 4 0 BIT D Y N A M I C RAM m m r f l; i i n t t i H PRELIMINARY MODULE DESCRIPTION T he THM 402020SG is a 2,097,152 w ards by 40 b its dynam ic HAM m odule which assem bled 20 pcs of T C 514400J on the printed circuit board.

514400

Abstract: V7777 M514400
Contextual Info: 514400JP/ZP-8/10/12 4 Megabit DRAM 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi H M 514400 is a C M O S dynam ic RAM organized 1,048,576 word x 4 bit. H M 514400 has realized higher density, higher perform ance and various functions by employing 0.6 /<m C M O S

IRF 829 equivalent

Abstract: JCA Technology
Contextual Info: HB56D232B Series 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232B is a 2M x 32 dynamic RAM module, mounted 16 pieces of 4Mbit DRAM 514400JP sealed in SOJ package. An outline of the HB56D232B is 72-pin single in-line package. Therefore, the HB56D232B makes high

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

siemens FLH

Abstract: 514400 514400J-10 514400J-80 514400J
Contextual Info: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80

Contextual Info: HB56D132 S e rie s -1,048,576-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT The H B56D 132B R /SBR is a 1M x 32 dynamic R A M mod­ ule, mounted 8 pieces of 4 Mbit DRAM 514400JP/AJ sealed in S O J package. An outline of the HB56D 132BR/

Siemens HYB 41256-12

Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
Contextual Info: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347

514400j

Abstract: 514400J-10 514400J-80
Contextual Info: SIEM EN S 1M X 4-Bit Dynamic RAM HYB 514400-80/-10 Preliminary • • 1 048 576 words by 4-bit organization Fast access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80 100 ns access time 190 ns cycle time (HYB 514400-10) • Fast page mode cycle time

Contextual Info: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The 514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4

514400J

Contextual Info: 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION * This is advanced information and specifications are subject to change without notice. The 514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 514400J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well

Contextual Info: HB56D236B/SB Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The RAM H B 5 6 D 2 3 6 B /S B /B S /S B S m odule, m ounted 16 is a pieces 2M of x 36 4 M bit dynam ic DRAM H M 5 1 4 4 0 0 J P /A J sea led in S O J p ac k a g e an d 8 p ieces of

HM511000

Contextual Info: ^ 6 5 6 1 3 6 6 S e r i e s - 1,048,576-W ord x 36-B it High D ensity Dynam ic RAM M odule • DESCRIPTIO N ■ PIN O U T The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM 514400JP sealed in SOJ package and 4 pieces of