Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    515D107M050BB6A Search Results

    SF Impression Pixel

    515D107M050BB6A Price and Stock

    Vishay Sprague 515D107M050BB6AE3

    CAP ALUM 100UF 20% 50V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 515D107M050BB6AE3 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Quest Components 515D107M050BB6AE3 4
    • 1 $0.837
    • 10 $0.837
    • 100 $0.837
    • 1000 $0.837
    • 10000 $0.837
    		Buy Now

    Vishay Intertechnologies 515D107M050BB6AE3

    100uF 50V 8x11.5 85?C Rad - Bulk (Alt: 515D107M050BB6AE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 515D107M050BB6AE3 Bulk 49 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Newark 515D107M050BB6AE3 Bulk 22 1
    • 1 $0.103
    • 10 $0.103
    • 100 $0.103
    • 1000 $0.103
    • 10000 $0.103
    		Buy Now
    Bristol Electronics 515D107M050BB6AE3 133
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    TTI 515D107M050BB6AE3 Bulk 2,995 14
    • 1 -
    • 10 -
    • 100 $0.372
    • 1000 $0.372
    • 10000 $0.372
    		Buy Now

    Vishay Cera-Mite 515D107M050BB6AE3

    100uF 50 V dc Aluminum Electrolytic Capacitor BB, 515D Series 2000h 8 x 11.5mm | Vishay Specialty Capacitors 515D107M050BB6AE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 515D107M050BB6AE3 Bulk 12 1
    • 1 $0.778
    • 10 $0.661
    • 100 $0.607
    • 1000 $0.544
    • 10000 $0.544
    		Buy Now

    Vishay Sprague 515D107M050BB6A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 515D107M050BB6A 50 13
    • 1 -
    • 10 -
    • 100 $0.4125
    • 1000 $0.4125
    • 10000 $0.4125
    		Buy Now
    515D107M050BB6A 20
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 515D107M050BB6A 248
    • 1 $0.62
    • 10 $0.62
    • 100 $0.279
    • 1000 $0.186
    • 10000 $0.186
    		Buy Now
    515D107M050BB6A 40
    • 1 $0.55
    • 10 $0.44
    • 100 $0.44
    • 1000 $0.44
    • 10000 $0.44
    		Buy Now

    515D107M050BB6A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    515D107M050BB6A Sprague Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Capacitor, Aluminum, Miniature, Radial Lead, +/-20% tol, 100uF, 50V Scan PDF
    515D107M050BB6AE3 Vishay Sprague Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 100UF 20% 50V RADIAL Original PDF

    515D107M050BB6A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    515D

    Abstract: 515D106M050JA6A 515D336M025AW6A 515D226M050JA6A 515D106M035JA6A
    Text: 515D Vishay Sprague Aluminum Capacitors + 85 °C, Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Solvent resistant construction through 100 WVDC • Low profile ratings Fig.1 Component outline. QUICK REFERENCE DATA DESCRIPTION


    Original     		24-Feb-05 515D 515D106M050JA6A 515D336M025AW6A 515D226M050JA6A 515D106M035JA6A PDF

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 PDF

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR PDF

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 A113 A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S9125 MRF6S9125NR1/NBR1. MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125MR1 PDF

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 5, 7/2005 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1 PDF

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi PDF

    515D

    Abstract: No abstract text available
    Text: 515D Vishay Sprague Aluminum Capacitors + 85 °C, Miniature, Radial Lead FEATURES • High CV per case size Pb-free • Low cost Available • Solvent resistant construction through 100 WVDC • Low profile ratings Fig.1 Component outline. QUICK REFERENCE DATA


    Original     		08-Apr-05 515D PDF

    hatching machine

    Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1


    Original     		MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 PDF

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR PDF

    515D

    Abstract: No abstract text available
    Text: 515D Vishay Sprague Aluminum Capacitors + 85 °C, Miniature, Radial Lead FEATURES • High CV per case size • Low cost • Low profile ratings RIPPLE CURRENT MULTIPLIERS Fig.1 Component outline TEMPERATURE Ambient Temperature ≤ + 70 °C + 85 °C FREQUENCY Hz


    Original     		18-Jul-08 515D PDF

    hatching machine

    Abstract: NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100 PDF

    NIPPON CAPACITORS

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 MRF5S9100NR1 ACPR25
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 NIPPON CAPACITORS A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 ACPR25 PDF

    atc100b102jt500xt

    Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 atc100b102jt500xt CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955 PDF

    MRF6S21100H

    Abstract: MRF6S21100HR3 A114 A115 AN1955 JESD22 MRF6S21100HSR3
    Text: Freescale Semiconductor Technical Data MRF6S21100H Rev. 2, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H A114 A115 AN1955 JESD22 MRF6S21100HSR3 PDF

    199D104X9050AA1

    Abstract: 199D105X9035AA2 199D106X0035DA1 199D104X9035AA2 199D106X0016CA1 199D106X0050FE2 capacitor powerlytic 36d 75 VDC 199D225X9035BA1 Sprague Powerlytic 360 hx7s
    Text: Vishay Sprague Aluminum and Tantalex¨ Capacitors 80D Series Snap Lock Aluminum Capacitors 518D Series Aluminum Capacitors These miniature radial lead aluminum capacitors feature high CV per case size, low cost, solvent resistant construction, and low profile ratings. Capacitance


    Original     		515D106M016JA6A 53D102G063GJ6 199D106X0035DA1 53D222G063HL6 199D226X0035EE2 53D461F200JP6 199D336X0035FE2 53D101F250GJ6 199D476X0035FE2 53D101F400JL6 199D104X9050AA1 199D105X9035AA2 199D104X9035AA2 199D106X0016CA1 199D106X0050FE2 capacitor powerlytic 36d 75 VDC 199D225X9035BA1 Sprague Powerlytic 360 hx7s PDF

    MRF6S21100H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9100N Rev. 5, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 PDF