GMS90C52
Abstract: GMS97C52 90C32 GMS97L51 90c31 0X000000B2 GMS97C5X 97C51 GMS90 GMS97C51
Text: 8-Bit CMOS Microcontroller GMS90 Series GMS90C31/51/31B/51B, GMS97C51 GMS90L31/51/31B/51B, GMS97L51 Low voltage versions Fully compatible to standard MCS-51 microcontroller Versions for 12/24/40 MHz operating frequency (90C31/51) Versions for 12/24/33 MHz operating frequency (90C31B/51B, 97C51)
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GMS90
GMS90C31/51/31B/51B,
GMS97C51
GMS90L31/51/31B/51B,
GMS97L51
MCS-51
90C31/51)
90C31B/51B,
97C51)
12MHz
GMS90C52
GMS97C52
90C32
GMS97L51
90c31
0X000000B2
GMS97C5X
97C51
GMS97C51
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU199A – March 2007 – Revised June 2007 TPS2041B/51B EVM Power-Distribution Switch This User’s Guide describes the characteristics, operation, and use of TPS2041B/51B evaluation modules EVM featuring the Texas Instruments TPS2041/51B in the
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SLVU199A
TPS2041B/51B
TPS2041B/51B
TPS2041/51B
OT-23
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Untitled
Abstract: No abstract text available
Text: PT26-51B/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Package in 8mm tape on 7” diameter reels. ․Pb free ․The product itself will remain within RoHS compliant version. Description PT26-51B/TR8 ES is a phototransistor in miniature SMD package which is molded in a black with
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PT26-51B/TR8
PT26-51B/TR8
DPT-0000077
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.6mm Round Subminiature Side Looking Phototransiator PT26-51B/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Package in 8mm tape on 7” diameter reels. ․Pb free ․The product itself will remain within RoHS compliant version.
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PT26-51B/TR8
PT26-51B/TR8
DPT-0000077
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.6mm Round Subminiature Side Looking Phototransiator PT26-51B/TR8 Features Fast response time High photo sensitivity Small junction capacitance Package in 8mm tape on 7” diameter reels. Pb free The product itself will remain within RoHS compliant version.
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PT26-51B/TR8
PT26-51B/TR8
DTT-026-269
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51b SMD
Abstract: PT26-51B
Text: Technical Data Sheet 1.6mm Round Subminiature Side Looking Phototransiator PT26-51B/TR8 Features ․Fast response time ․High photo sensitivity ․Small junction capacitance ․Package in 8mm tape on 7” diameter reels. ․Pb free ․The product itself will remain within RoHS compliant version.
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PT26-51B/TR8
PT26-51B/TR8
NoDTT-026-269
date03-06-2007
51b SMD
PT26-51B
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Untitled
Abstract: No abstract text available
Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMW3146
TLMW3146
CIE1931
55ake
D-74025
18-Jun-04
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smd 41B
Abstract: No abstract text available
Text: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMW3146
TLMW3146
CIE1931
55ake
D-74025
03-May-04
smd 41B
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diodes Two Terminals - 3W 3.0 W Part No. Z3SMB6.8B Z3SMB7.5B Z3SMB8.2B Z3SMB8.7B Z3SMB9.1B Z3SMB10B Z3SMB11B Z3SMB12B Z3SMB13B Z3SMB14B Z3SMB15B Z3SMB16B Z3SMB17B Z3SMB18B Z3SMB19B Z3SMB20B Z3SMB22B Z3SMB24B Z3SMB25B Z3SMB27B Z3SMB28B Z3SMB30B Z3SMB33B
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Z3SMB10B
Z3SMB11B
Z3SMB12B
Z3SMB13B
Z3SMB14B
Z3SMB15B
Z3SMB16B
Z3SMB17B
Z3SMB18B
Z3SMB19B
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smd transistor 41B
Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
smd transistor 41B
5251B
SMD 41B sot23
5241B
zener 35b
smd MARKING 8g
5233B
81F smd
CMBZ-5245B
SMD marking 8M zener
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ST03D 55
Abstract: DL03-58F1 DL03 DL04 SMD Transistor 1f ST02D-82 ST50D-27 AX06 AX078 VR-60B
Text: SURGE PROTECTORS Varistors Features 1. Bidirectional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. 1Y Application 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption
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VR-60B
-60BP
-61F1
O-221
ST03D 55
DL03-58F1
DL03
DL04
SMD Transistor 1f
ST02D-82
ST50D-27
AX06
AX078
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ic 41b sot23
Abstract: 46B smd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
ic 41b sot23
46B smd
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smd transistor 41B
Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE
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OT-23
CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
C-120
smd transistor 41B
SMD 41B sot23
5241B
5252B
CMBZ-5251B
smd 41B
5233B
5245B
CMBZ-5245B
CMBZ5230B
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Untitled
Abstract: No abstract text available
Text: SMD LED Product Data Sheet LTW-108GCG-KD Spec No.: DS22-2009-0165 Effective Date: 09/18/2012 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
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LTW-108GCG-KD
DS22-2009-0165
BNS-OD-FC001/A4
EIA-471
BNS-OD-C131/A4
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st03d
Abstract: No abstract text available
Text: Surge Absorbers Varistors [Features 1. Bidirectional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. VR-61F1, VRYA6, 15) [Applications) 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption
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VR-61F1,
VR-60B
-60BP
ST04-16
ST03-58F1
ST04-16F1
-27F1
ST50V-27F
ST70-27F
ST02D-82
st03d
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Untitled
Abstract: No abstract text available
Text: O D L I C Q l 7 ^w D r1 “0 0 I / 10 - 1 5 0 0 MHz S tan d ard H ybrid A m plifier Temperature bandwidth +25 °c -55 to + 85 Frequency range 10- 1500 Small signal gain MHz 13.5 ± 0.5 dB Gain vs. temperature • High 3rd order intercept point Un/ts Specification limit
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OCR Scan
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H91-5817
744c1331
0000b20
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PDF
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TSH31
Abstract: No abstract text available
Text: /T T SCS-THOMSON * /£ « SMiyiÊ'IMMKg TSH31 280MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER VERY LOW INPUT CURRENT : 2pAtyp GAIN BANDWIDTH PRODUCT : 280MHz GAIN OF 2 STABILITY SLEW RATE : 300V/|is STANDARD PIN OUT N DIP8 D S08 (Plastic Package
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OCR Scan
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TSH31
280MHz
280MHz
TSH31
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PDF
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Untitled
Abstract: No abstract text available
Text: Int0 rnQt iODQI provisional Data Sheet No. PD-9.1549 IO R Rectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L 200 Volt, 0.1000 HEXFET P ro d u c t S um m an 1 HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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XO-53B
Abstract: No abstract text available
Text: ALPHABETICAL CONTENTS TYPE PRODUCT 3 0 0 SERIES . APD-016M040 . .Plasm a Display Modules . APD -32A026. .Plasm a Display M odules. APD-192O088 . Plasm a Display Modules . APD-192G068-1 .Plasm a Display Modules . APD-240M028 . .Plasm a Display Modules .
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APD-016M040
-32A026.
APD-192O088
APD-192G068-1
APD-240M028
APD-240M026A
APD-240M026A-1
APD-256M026
APD-258M026-1
CCF-55,
XO-53B
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smd diode 319
Abstract: No abstract text available
Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273
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OT-223
Q67000-S273
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd diode 319
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smd diode sm i7
Abstract: m33 tf 130 AF1EA
Text: Ip j .0 p p Q t i o n a l Provisional Data Sheet No. PD-9.1548 IOR Rectifier HEXFET POWER MOSFET IRFN240 N -C H A N N E L 200 Volt, 0.180 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The effi
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Untitled
Abstract: No abstract text available
Text: L2 1 C 11 8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/Raytheon TMC2111
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TMC2111
MIL-STD-883,
24-pin
28-pin
L21C11
L21C11
L21C11PC25
L21C11PC20
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WWA38
Abstract: No abstract text available
Text: PACKAGING METHODS These pages show standard packaging methods now In use by Dale Electronics. If you have a question or a special requirement, consult the factory. CONNECTORS INSERT TRAY High im pact styrene, vacuum form ed to protect individual units and for easy disbursal
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11-a/a
MIL-P-116,
WWA38
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PDF
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Untitled
Abstract: No abstract text available
Text: APEX niCROTECHNOLOGY CO b?E D • OôTôbBb 0001557 TEI ■ AflT m M P y f* § R s PA51 • PA51A . . . . APEX MICRCTE C H N O LO G Y CORPORATION • APPLICATICI NS HOTLINE 8 0 0 546-A PEX . . . 8 0 0 -5 4 6 -2 7 3 9 FEATURES • WIDE SUPPLY RANGE — ±10 to ±40V
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PA51A
546-APEX
OPA501,
PA51A
PA51MU
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