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    5257 TRANSISTOR Search Results

    5257 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5257 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD card socket, footprint to PCB

    Abstract: MAXQ1103 DS8005-RRX EMV CARDS DDA DS8007 DS8024 GSM11-11 Maxim EMV CARDS DDA
    Text: 19-5257; Rev 0; 4/10 Smart Card Interface Features The DS8005 dual smart card interface is a low-cost, dual analog front-end for an IC card reader interface that needs to communicate with two smart cards in a mutually exclusive fashion. The analog interface is


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    PDF DS8005 DS8024s 28-pin DS8005 SD card socket, footprint to PCB MAXQ1103 DS8005-RRX EMV CARDS DDA DS8007 DS8024 GSM11-11 Maxim EMV CARDS DDA

    Untitled

    Abstract: No abstract text available
    Text: 19-5257; Rev 0; 4/10 Smart Card Interface The DS8005 dual smart card interface is a low-cost, dual analog front-end for an IC card reader interface that needs to communicate with two smart cards in a mutually exclusive fashion. The analog interface is designed for use in ISO 7816, EMV , and B-CAS applications. The device is functionally similar to two


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    PDF DS8005 DS8024s 28-pin DS8313, DS8005

    GaAs FET operating junction temperature

    Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .


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    PDF ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


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    PDF ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet

    8-Channel opamp mux

    Abstract: mux88 mux lf11508 DIGITAL MULTIPLEXER 81 MUX MUX-88 SMP81
    Text: MUX-88 JPMI Precision 8-CHANNEL ANALOGMULTIPLEXERFOR PCM CODECS OVERVOLTAGE PROTECTED) Monolithics Inc. FEATURES GENERAL DESCRIPTION . The MUX-88is a monolithic eight-channel analog multiplexer ideally ~uited to shared:-channel PCM CODEC systems. One-of-eight channels is selected upon the decoding of a 3 bit


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    PDF MUX-88 MUX-88is 8-Channel opamp mux mux88 mux lf11508 DIGITAL MULTIPLEXER 81 MUX MUX-88 SMP81

    esaki Diode

    Abstract: detail of half adder ic TUNNEL DIODE SCHINDLER GaAs tunnel diode MT-021 tunnel diode GaAs AD9235 AM687 MC1650
    Text: MT-024 TUTORIAL ADC Architectures V: Pipelined Subranging ADCs by Walt Kester INTRODUCTION The pipelined subranging ADC architecture dominates today's applications where sampling rates of greater than 5 MSPS to 10 MSPS are required. Although the flash all-parallel architecture


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    PDF MT-024 MT-020) 1980s 1990s, esaki Diode detail of half adder ic TUNNEL DIODE SCHINDLER GaAs tunnel diode MT-021 tunnel diode GaAs AD9235 AM687 MC1650

    STM32 IWDG

    Abstract: UM0320 8054 REGULATOR MAX21000 RM0312 UFQFPN28 UFQFPN48 STM8TL53 PWM 50a8 STM8 programming manual
    Text: STM8TL53C4 STM8TL53G4 8-bit ultralow power touch sensing microcontroller with 16 Kbytes Flash, ProxSense , timers, USART, SPI, I2C Preliminary data Features • Operating conditions – Operating power supply: 1.65 V to 3.6 V – Temperature range: –40 °C to 85 °C


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    PDF STM8TL53C4 STM8TL53G4 STM32 IWDG UM0320 8054 REGULATOR MAX21000 RM0312 UFQFPN28 UFQFPN48 STM8TL53 PWM 50a8 STM8 programming manual

    Untitled

    Abstract: No abstract text available
    Text: STM8TL52G4 STM8TL52F4 STM8TL53C4 STM8TL53G4 STM8TL53F4 8-bit ultralow power touch sensing microcontroller with 16 Kbytes Flash, ProxSense , timers, USART, SPI, I2C Datasheet  production data Features • Operating conditions – Operating power supply: 1.65 V to 3.6 V


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    PDF STM8TL52G4 STM8TL52F4 STM8TL53C4 STM8TL53G4 STM8TL53F4

    Untitled

    Abstract: No abstract text available
    Text: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Datasheet - production data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA,


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    PDF STM8L101xx DocID15275

    STM8L

    Abstract: STM8L101XX STM8L Reference Manual UFQFPN20 uFQFPN-20 PWM example sTM8l uFQFPN-20 footprint STM8L101 STM8L101G3U STM8L101F3U6
    Text: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA, Active-halt: 0.8 µA, Dynamic Run:


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    PDF STM8L101xx UFQFPN28 STM8L STM8L101XX STM8L Reference Manual UFQFPN20 uFQFPN-20 PWM example sTM8l uFQFPN-20 footprint STM8L101 STM8L101G3U STM8L101F3U6

    BJ 938 Transistor

    Abstract: UFQFPN28 PWM example sTM8l rm0013 STM8L Reference Manual STM8L CPU programming manual STM8L 8054 transistor
    Text: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA, Active-halt: 0.8 µA, Dynamic Run:


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    PDF STM8L101xx BJ 938 Transistor UFQFPN28 PWM example sTM8l rm0013 STM8L Reference Manual STM8L CPU programming manual STM8L 8054 transistor

    UFQFPN20

    Abstract: No abstract text available
    Text: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Datasheet - production data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA,


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    PDF STM8L101xx DocID15275 UFQFPN20

    Untitled

    Abstract: No abstract text available
    Text: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA, Active-halt: 0.8 µA, Dynamic Run:


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    PDF STM8L101xx UFQFPN28

    STM8 spi programming manual

    Abstract: PM0212 RM0312 STM8TL53 STM8TL53F4 STM8TL52F4 pcb design 0,4 mm pitch UFQFPN48 stm8 tssop20 52e4 transistor
    Text: STM8TL52G4 STM8TL52F4 STM8TL53C4 STM8TL53G4 STM8TL53F4 8-bit ultralow power touch sensing microcontroller with 16 Kbytes Flash, ProxSense , timers, USART, SPI, I2C Datasheet  production data Features • Operating conditions – Operating power supply: 1.65 V to 3.6 V


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    PDF STM8TL52G4 STM8TL52F4 STM8TL53C4 STM8TL53G4 STM8TL53F4 STM8 spi programming manual PM0212 RM0312 STM8TL53 STM8TL53F4 pcb design 0,4 mm pitch UFQFPN48 stm8 tssop20 52e4 transistor

    5257 transistor

    Abstract: n150 transistor
    Text: SFH620AA/AGB SIEMENS 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT ✓ FEATURES • High Current Transfer Ratios at 5 mA: 50-600% at 1 mA: 45% typical >13 • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VACRMS


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    PDF SFH6206 SFH620AA/AGB SFH620AA/AGB SFH620AAM 5257 transistor n150 transistor

    SOT23 MARK Y2

    Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
    Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)


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    PDF DO-204AH DO-35) OT-23 O-236AA/AB) MLL4678 MLL4679 MLL4680 L4681 MLL4682 SOT23 MARK Y2 BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A

    CD4S14B

    Abstract: Applications of decoder CD4514 CD4514 circuits of cd4514
    Text: CD4514BM/CD45t4BC, CD4515BM/CD4515BC 4-Bit Latched/4-to-16 Line Decoders General Description Features The CD4S14B and C04515B are 4-to-16 line decoders with latched inputs Implemented with complementary MOS CMQS circuits constructed with N- and P-channel en­


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    PDF CD4514BM/CD4514BC, CD4515BM/CD4515BC CD4514BM/CD45t4BC, CD4515BM/CD4515BC Latched/4-to-16 CD4S14B C04515B 4-to-16 CD4514B CD4515B Applications of decoder CD4514 CD4514 circuits of cd4514

    Untitled

    Abstract: No abstract text available
    Text: A m P A L 2 2 V 1 0 - 1 5 24-Pin IMOX III Programmable Array Logic PRELIMINARY Distinctive Characteristics • • • • • • • 15-ns performance Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output


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    PDF 24-Pin 15-ns 28-pin

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION « Zero to 100% Duty Cycle Control The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the


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    PDF UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UC1875

    AMPAL22V10

    Abstract: No abstract text available
    Text: A m P A L 2 2 V 1 0-1 5 24-Pin IM O X III7“ Program m able Array Logic P R E L IM IN A R Y Distinctive Characteristics • • • • • • • • • 15-ns perform ance Increased logic pow er — up to 22 inputs and 10 outputs Increased product term s — average 12 per output


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    PDF 24-Pin 15-ns 28-pin WF022301 AMPAL22V10

    XR13600

    Abstract: XR-13600CP XR 13600 13600cp XR-13600 XR13600CP XR13600AP
    Text: Z * EXAR XR-13600 Dual Operational Transconductance Amplifier G E N E R A L DESCRIPTION F U N C T IO N A L B LO C K DIAGRAM T h e X R -13600 is a dual operational tra nsconductance N orton a m plifier w ith predistortion diodes and non­ com m itted D arlington bu ffer outputs.


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    PDF XR-13600 XR-1468/1568 XR13600 XR-13600CP XR 13600 13600cp XR-13600 XR13600CP XR13600AP

    T7525EC

    Abstract: b562* Transistor Transistor BFT 98 LL4148F smd transistor SA4 transistor SMD PB01 A1s smd TRANSISTOR npo 121 j kck TGS 816 DSP16A
    Text: A T & T flELEC I C b>4E » • Q05QQ2b GQGcm3G 4 b l MATTc! * Data Sheet February 1993 A lsr Microelectronics AT&T V32x-V42D V.32bis/FAX/V.42bis DeskTop Complete Modem Chip Sets Introduction The AT&T DeskTop Complete Modem Chip Set enables the modem designer to build a high-speed,


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    PDF GGS002b V32X-V42D 32bis/FAX/V 42bis 68-Pin 005002b 84-Pin T7525EC b562* Transistor Transistor BFT 98 LL4148F smd transistor SA4 transistor SMD PB01 A1s smd TRANSISTOR npo 121 j kck TGS 816 DSP16A

    D2SB 73

    Abstract: No abstract text available
    Text: 256 x 36 x 2 /512 x 36 x 2 BiFIFOs FEATURES FUNCTIONAL DESCRIPTION • Fast Cycle Times: 15/20/25/30/35 ns The LH543601/11 contain two FIFO buffers, FIFO #1 and FIFO #2. These operate in parallel, but in opposite directions, for bidirectional data buffering. FIFO #1 and


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    PDF LH5420 36-bi1/512x 36-bit 18/9-bit LH543601/11 132-Lead, PQFP132-P-S950) 120-Lead, PGA120-C-S1360) D2SB 73

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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