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    525MM2 Price and Stock

    Cinch Connectivity Solutions 415-0525-MM250

    COAX CBL SMPM TO SMPM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 415-0525-MM250 Bag 25 1
    • 1 $45.78
    • 10 $40.087
    • 100 $35.8802
    • 1000 $33.90064
    • 10000 $33.90064
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    Mouser Electronics 415-0525-MM250 25
    • 1 $44.89
    • 10 $40.08
    • 100 $35.21
    • 1000 $35.21
    • 10000 $35.21
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    Newark 415-0525-MM250 Bulk 15 1
    • 1 $30.3
    • 10 $30.3
    • 100 $30.3
    • 1000 $30.3
    • 10000 $30.3
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    RS 415-0525-MM250 Bulk 10 Weeks 25
    • 1 -
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    • 100 $38.44
    • 1000 $38.44
    • 10000 $38.44
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    Interstate Connecting Components 415-0525-MM250
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    Richardson RFPD 415-0525-MM250 25
    • 1 -
    • 10 -
    • 100 $29.81
    • 1000 $28.21
    • 10000 $28.21
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    Cinch Connectivity Solutions 415-0525-MM200

    COAX CBL SMPM TO SMPM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 415-0525-MM200 Bag 25 1
    • 1 $44.84
    • 10 $39.269
    • 100 $35.148
    • 1000 $33.2088
    • 10000 $33.2088
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    Mouser Electronics 415-0525-MM200 21
    • 1 $44
    • 10 $39.26
    • 100 $34.52
    • 1000 $34.52
    • 10000 $34.52
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    Newark 415-0525-MM200 Bulk 10 1
    • 1 $29.71
    • 10 $29.71
    • 100 $29.71
    • 1000 $29.71
    • 10000 $29.71
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    RS 415-0525-MM200 Bulk 10 Weeks 25
    • 1 -
    • 10 -
    • 100 $37.69
    • 1000 $37.69
    • 10000 $37.69
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    Interstate Connecting Components 415-0525-MM200
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    Richardson RFPD 415-0525-MM200 25
    • 1 -
    • 10 -
    • 100 $29.17
    • 1000 $27.56
    • 10000 $27.56
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    Bel Fuse 415-0525-MM250

    RF / Coaxial Cable Assembly, SMPM Jack to 90? SMPM Jack, 0.086" Semi Rigid, 9.8 ", 250 mm - Bulk (Alt: 63AK6457)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 415-0525-MM250 Bulk 1
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    415-0525-MM250 Bag 10 Weeks 25
    • 1 -
    • 10 -
    • 100 $31.415
    • 1000 $31.415
    • 10000 $31.415
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    Bel Fuse 415-0525-MM200

    RF / Coaxial Cable Assembly, SMPM Jack to 90? SMPM Jack, 0.086" Semi Rigid, 7.9 ", 200 mm - Bag (Alt: 415-0525-MM200)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 415-0525-MM200 Bag 10 Weeks 25
    • 1 -
    • 10 -
    • 100 $30.805
    • 1000 $30.805
    • 10000 $30.805
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    415-0525-MM200 Bulk 1
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    525MM2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


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    PDF W3E16M64S-XBX 16Mx64 266Mbps

    7410

    Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


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    PDF 7410E WED3C7410E16M-XBHX* 256Kx72 25x21mm, 625mm2 352mm2 1329mm2 525mm2 x64/x72 7410 WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola

    CI 7410

    Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
    Text: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications


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    PDF PC7410 256Kx72 16Mbit BP123 CI 7410 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 Multi-Chip Modules motorola

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


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    PDF 7410E WED3C7410E16M-XBHX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 WED3C7410HITCE

    Untitled

    Abstract: No abstract text available
    Text: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M64S-XBX Performance Features VA N CE D DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2 compatible


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    PDF W3E16M64S-XBX 200MHz MIF2038

    W3E16M64S-XBX

    Abstract: W3E32M64S-XBX
    Text: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply


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    PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) Bidi15, 25x21mm W3E16M64S-XBX W3E32M64S-XBX

    WED3C750A8M-200BX

    Abstract: No abstract text available
    Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications


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    PDF 750TM/8Mbit WED3C7508M-200BX 128Kx72 WED3C750A WED3C7558M-300BX WED3C750A8M-200BX* WEDPN8M72V-XBX* 750sbd WED3C750A8M-200BX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


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    PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


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    PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Single 3.3V ± 0.3V power supply  Fully Synchronous; all signals registered on positive edge


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    PDF WEDPN8M72V-XB2X 8Mx72 133MHz WEDPN8M72V-XB2X 64MByte 512Mb)

    WEDPN16M72V-XB2X

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


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    PDF WEDPN16M72V-XB2X 16Mx72 133MHz WEDPN16M72V-XB2X 128MByte 268anges 525mm2 133MHz

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX White Electronic Designs 16Mx64 DDR SDRAM Advanced* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 50% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 21 x 25mm n 2.5V ±0.2V core power supply


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    PDF 16Mx64 266MHz 200MHz 250MHz W3E16M64S-XBX

    sram 1mbyte 3.3v

    Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
    Text: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications


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    PDF PC755B 128Kx72 PCX745BVZFUxxxLE PC7410M16MGxxxLE PCX755B BP123 sram 1mbyte 3.3v 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill

    ATMEL 322

    Abstract: atmel 711 PC755B
    Text: 3& 0LFURSURFHVVRU  0%\WH /&DFKH 0XOWL&KLS 0RGXOH DFW 6KHHW 0DLQ )HDWXUHV • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache) • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications


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    PDF PC755B 128Kx72 PCX745BVZFUxxxLE PC7410M16MGxxxLE PCX755B BP123 ATMEL 322 atmel 711

    Untitled

    Abstract: No abstract text available
    Text: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package compatible VA N CE D W3E16M64S-XBX Performance Features • DDR SDRAM Speed = 266, 250, 200MHz • Core Supply Voltage = 2.5V ± 0.2V • I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2


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    PDF W3E16M64S-XBX 200MHz W3E16M64S-XBX MIF2038

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured • as 256Kx72 L2 Cache


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    PDF 7410E WED3C7410E16M-XBX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 W72M64V-XBX

    WED3C7508M-200BX

    Abstract: WED3C750A8M-200BX WEDPN8M72V-XBX
    Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package WED3C750A8M Product Sheet Rev. 1 5/01 Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache


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    PDF 750TM/8Mbit WED3C750A8M WED3C7508M-200BX 128Kx72 25x21mm, 525mm WED3C750A 625mm2 352mm2 1329mm2 WED3C750A8M-200BX WEDPN8M72V-XBX

    WEDPN16M72V-XB2X

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


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    PDF WEDPN16M72V-XB2X 16Mx72 125MHz WEDPN16M72V-XB2X 128MByte 525mm2

    cga motorola

    Abstract: WED3C750A8M-200BX 7410 7410E WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-400BX* Features • • • • • A 400 MHz 7410 AltiVec™ µProcessor 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


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    PDF 7410E WED3C7410E16M-400BX* 256Kx72 WED3C7410 MIF2009 cga motorola WED3C750A8M-200BX 7410 WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply


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    PDF W3E16M64S-XBX 16Mx64 266Mbps W3E32M64S-XBX) 25x21mm

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XB2X 16Mx72 SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


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    PDF WEDPN16M72V-XB2X 16Mx72 133MHz 128MByte 864-bit 525mm2 133MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Single 3.3V ± 0.3V power supply  Fully Synchronous; all signals registered on positive edge


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    PDF WEDPN8M72V-XB2X 8Mx72 133MHz WEDPN8M72V-XB2X 64MByte 512Mb)

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


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    PDF W3E16M64S-XBX 16Mx64 266Mbps

    with or without underfill

    Abstract: WED3C7410E16M-400BX WED3C750A8M-200BX WED3C7558M-XBX WED3C755E8M-XBX 21mmx25mm
    Text: PowerPC 755E/8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C755E8M-XBX Features • 300 or 350 MHz 755E Rev RISC µProcessor • 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for


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    PDF 755E/8Mbit WED3C755E8M-XBX 128Kx72 25x21mm, 525mm2. WED3C755E8M-XBX x64/x72 WED3C755E8M MIF2032 with or without underfill WED3C7410E16M-400BX WED3C750A8M-200BX WED3C7558M-XBX 21mmx25mm