j9 diode
Abstract: j196 h196 5388B Diode 9H J69 DIODE
Text: 1N 5347B.1N 5388B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 3 : + 9 ; Absolute Maximum Ratings Symbol Conditions Axial lead diode
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5347B.
5388B
5388B
j9 diode
j196
h196
Diode 9H
J69 DIODE
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5349B
Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Text: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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5347B
5388B
UL94V-0
DO-201
5347B
5348B
5349B
5350B
5351B
5352B
5353B
5364b
5375B
5366B
5363B
5359B
5367B
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K580
Abstract: 5382B i5ij K8/selenium rectifier
Text: 1N 5347B.1N 5382B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode
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5347B.
5382B
5382B
K580
i5ij
K8/selenium rectifier
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Untitled
Abstract: No abstract text available
Text: 1N 5347B.1N 5388B 3 : + 9 ; Absolute Maximum Ratings Symbol Conditions Axial lead diode Zener silicon diodes ; 9 3< : + &% = ' 8 ; 9 @ < A @ < A
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5347B.
5388B
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Untitled
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5347B.
5382B
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5347B
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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Original
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5347B.
5382B
5347B
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5347B.
5382B
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5346B
Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.
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5345B
5388B
DO-201
UL94V-0
5345B
5346B
5347B
5348B
5349B
5350B
5375B
5353b
5359B
1n5376b
5361B
5358B
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IN5350B
Abstract: in5346b in5347b 5346B 5350B
Text: 1N5354B THRU 1N5388B 5.0 WATT PLASTIC AXIAL LEAD SILICON ZENER DIODES D0-2Q1AD !N 0 M IN A L '1 ! TYPE I ZENER TEST VO LTAG E CUR R ENT FOR A & B SUFFIXONLY Vz at Izt Z zt at Izt Z z k at Izk Izk ;V mA 1Q 4 ~ ? f l 1N5345B IN 5346B VJ : 10 1N5348B 1N5349B
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1N5354B
1N5388B
1N5345B
5346B
5347B
1N5348B
1N5349B
5350B
1N5351B
1N5352B
IN5350B
in5346b
in5347b
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5349B
Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Text: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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5345B
5388B
DO-201
UL94V-0
5349B
5357B
5364b
5366B
5352b
5359b
5369b
5363b
5353b
5350B
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5346B
Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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Original
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5345B
5388B
DO-201
UL94V-0
5346B
5388B
5359B
5368B
5366B
5363b
5358B
5349B
5369b
5375B
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IN 5349B
Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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Original
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5345B
5388B
DO-201
UL94V-0
IN 5349B
5377B
5357B
5368B
5363b
in 5352b
in 5359b
5349b
5364b
5352b
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Untitled
Abstract: No abstract text available
Text: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.
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D0-201
UL94V-0
0D1RS14
DGG174
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IN5342b
Abstract: 5357B 5341B 5337B diode IN 5342B IN 5342B 5335B 5342B 5333B 5 watt zener
Text: 1N 5333B thru 1N 5388B SCOTTSDALE, A l For more information call: 602 941-6300 FEATURES SILICON 5 WATT ZENER DIODES • Z E N E R V O LTA G E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P A B ILITY • FOR A V A ILA B LE T O L ER A N C E S - SEE NOTE 1
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5333B
5388B
0DG3fl03
IN5342b
5357B
5341B
5337B
diode IN 5342B
IN 5342B
5335B
5342B
5333B
5 watt zener
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