Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    541 TRANSISTOR Search Results

    541 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    541 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPS53115

    Abstract: No abstract text available
    Text: User's Guide SLVU373A – March 2010 – Revised May 2012 TPS53114EVM-541 The TPS53114EVM-541 evaluation module can demonstrate a wide-input-voltage 5 V–22 V to 1.20-V, 4A application in a stand-alone module. This module allows a customer to evaluate the performance of the


    Original     		PDF SLVU373A TPS53114EVM-541 TPS53114EVM-541 TPS53114 TPS53115

    circuit diagram of monitor ibm e74

    Abstract: w57 transistor b3 8902 w56 transistor ziatech Marking BH W36 marking w53 w58 transistor zt 8817 zt 8902
    Text: ZT 8841 and ZT 88CT41 Quad Serial Interface HARDWARE MANUAL For Revision A.2 Reorder Part Number ZT M8841 May 20, 1994 1050 Southwood Drive San Luis Obispo, CA 93401 USA FAX 805 541-5088 Telephone (805) 541-0488 ZIATECH WARRANTY Warranty information for Ziatech products is available at Ziatech’s


    Original     		PDF 88CT41 M8841 RS-232-C circuit diagram of monitor ibm e74 w57 transistor b3 8902 w56 transistor ziatech Marking BH W36 marking w53 w58 transistor zt 8817 zt 8902

    IC 7479

    Abstract: LM11 LM11 op amp LM11 national Widlar IC OP AMP for Piezoelectric transducers 7479 at q209 "logarithmic amplifier" LH0032
    Text: National Semiconductor Application Note 242 April 1980 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Bob Pease and Mineo Yamatake National Semiconductor Corporation Santa Clara California USA Abstract A new bipolar op amp design has advanced the


    Original     		PDF

    nelson sensor light

    Abstract: Widlar Yamatake PROXIMITY SENSORS AN-446A C1995 SC-15 Yamatake Corporation proximity sensor with metal detector block diagram R. J. Widlar and M. Yamatake, "A 150W op amp"
    Text: National Semiconductor Application Note 446A 446A February 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corporation Santa Clara California Abstract Safe-area protection can be provided for a large


    Original     		PDF

    ferrite core binocular

    Abstract: 2843002402 RF amplifiers in the HF and VHF FAIR-RITE 2843002402 hf amplifier for transformer Oscillation mosfet mosfet HF amplifier ARF475 ARF475FL ferrite core high voltage transformer
    Text: Application Note 1814 October 2010 Paralleling MOSFETs in RF Amplifiers Richard Frey, P.E. RF Applications Engineer Phone: 541-382-8028, ext. 1111 dfrey@microsemi.com When two discrete MOSFET devices are connected in parallel, they will oscillate when forward bias is applied.


    Original     		PDF ARF475FL. ferrite core binocular 2843002402 RF amplifiers in the HF and VHF FAIR-RITE 2843002402 hf amplifier for transformer Oscillation mosfet mosfet HF amplifier ARF475 ARF475FL ferrite core high voltage transformer

    Widlar

    Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
    Text: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still


    Original     		PDF an009301 Widlar AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER

    8723 transistor

    Abstract: potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 LM108 TP-14
    Text: Low Voltage Techniques Low Voltage Techniques National Semiconductor Technical Paper 14 December 1978 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Abstract A micropower operational amplifier is described that will operate from a total supply voltage of 1 1V The


    Original     		PDF LM108 8723 transistor potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 TP-14

    LM11 op amp

    Abstract: ma709 LM11 ic 7478 jfet cascode LM11 national FET Curve Tracer National Semiconductor cable tracer circuit fet amplifier schematic AN-241
    Text: Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Abstract New developments have dramatically reduced the error currents of IC op amps especially at high temperatures The basic techniques used to obtain this peformance are briefly described Some of the problems associated with


    Original     		PDF

    LM709 equivalent

    Abstract: square root extractor LM7104 square root extractor using log antilog LM101 LM102 LM709 LM101 disadvantages square root extractor application LM709 Widlar LM101
    Text: The Monolithic Op Amp Monolithic Op Amp Universal Linear Component National Semiconductor Application Note 4 April 1968 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico C1995 National Semiconductor Corporation TL H 7357 TL H 7357 – 1 Figure 1 Free-running multivibrator


    Original     		PDF C1995 LM101 LM709 equivalent square root extractor LM7104 square root extractor using log antilog LM101 LM102 LM709 LM101 disadvantages square root extractor application LM709 Widlar

    scr driver dc motor speed control

    Abstract: 5A, 50V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 200w Widlar working principle of ac servo motor LM12 OP amp IC resistare LM318 regulator complete data on BRIDGE-RECTIFIER BRIDGE-RECTIFIER operation
    Text: National Semiconductor Application Note 446 March 1986 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract A power op amp capable of driving g35V at g10A has been fabricated on a single silicon chip Peak


    Original     		PDF

    Widlar

    Abstract: lm109k Widlar AN-21 AN-42 C1995 LM109 LM109H 6931 temperature regulator temperature-compensated zener
    Text: National Semiconductor Application Note 42 February 1971 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico introduction Because of the relatively high current requirements of digital systems there are a number of problems associated with using one centrally-located regulator Heavy power busses


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S KENNEDY CORP. 541 HIGHPOWER POWER HIGH OP-AMP OP-AMP SERIES 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Available to SMD #5962-88701 High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V


    Original     		PDF MIL-PRF-38534 541SKB MSK541 541SDB MSK146 541SZB MSK147 MSK145

    LM11

    Abstract: LM11 national lM1081 LM11 op amp transistor 8722 Widlar FETs Field Effect Transistors darlington cascode second stage P-Channel Depletion Mode Field Effect Transistor q26 fet
    Text: Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Abstract An IC op amp design that reduces bias currents below 100 pA over a b55 C to a125 C temperature range is discussed Super-gain bipolar transistors with on-wafer trimming are used providing low offset voltage and drift


    Original     		PDF LM108 LM11 LM11 national lM1081 LM11 op amp transistor 8722 Widlar FETs Field Effect Transistors darlington cascode second stage P-Channel Depletion Mode Field Effect Transistor q26 fet

    transistor 6B

    Abstract: 6B transistor thermocouple to frequency AN-541
    Text: a AN-541 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com Proper System Grounding Techniques for 6B Series Systems INTRODUCTION The 6B series of digital signal conditioning modules,


    Original     		PDF AN-541 RS-485 RS-232C transistor 6B 6B transistor thermocouple to frequency AN-541

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S KENNEDY CORP. HIGHPOWER POWER HIGH OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 541 SERIES 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Available to SMD #5962-8870101 High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V


    Original     		PDF MIL-PRF-38534 541SKB 541SDB 541SZB MSK145 MSK147 MSK146 MSK541 MSK541E

    82801gb

    Abstract: Intel 82801GB ich7 82801GB circuit 945G MOTHERBOARD CIRCUIT diagram 945p 82801gr 82801HH 82801HB intel 915gl
    Text: Intel Pentium® 4 Processors 570/571, 560/561, 550/551, 540/541, 530/531 and 520/521∆ Supporting Hyper-Threading Technology1 Datasheet On 90 nm Process in 775-land LGA Package and supporting Intel® Extended Memory 64 TechnologyΦ May 2005 Document Number: 302351-004


    Original     		PDF 775-land i7-2630QM/i7-2635QM, i7-2670QM/i72675QM, i5-2430M/i5-2435M, i5-2410M/i5-2415M. entium-4-Processor-530J-supporting-HT-Tec 05-Sep-2011 82801gb Intel 82801GB ich7 82801GB circuit 945G MOTHERBOARD CIRCUIT diagram 945p 82801gr 82801HH 82801HB intel 915gl

    541 transistor

    Abstract: MSK541 OPA501 burr brown op amp opa512 high power fet audio amplifier schematic OPA512 MSK145 MSK147 OPA511
    Text: ISO 9001 CERTIFIED BY DSCC M.S KENNEDY CORP. HIGHPOWER POWER HIGH OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 541 SERIES 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Available to SMD #5962-8870101 High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V


    Original     		PDF MIL-PRF-38534 541SKB 541SDB 541SZB MSK145 MSK147 MSK146 MSK541 MSK541E 541 transistor MSK541 OPA501 burr brown op amp opa512 high power fet audio amplifier schematic OPA512 MSK145 MSK147 OPA511

    intel lga775

    Abstract: 775 PC MOTHERBOARD SERVICE MANUAL 865g Motherboard bx80547pg3400 pinout diagram for LGA775 processor socket core ich8r 946gz PPGA478 945G MOTHERBOARD CIRCUIT diagram lga775 915p
    Text: Intel Pentium® 4 Processors 570/571, 560/561, 550/551, 540/541, 530/531 and 520/521∆ Supporting Hyper-Threading Technology1 Datasheet On 90 nm Process in 775-land LGA Package and supporting Intel® Extended Memory 64 TechnologyΦ May 2005 Document Number: 302351-004


    Original     		PDF 775-land i7-2630QM/i7-2635QM, i7-2670QM/i7-2675QM, i5-2430M/i5-2435M, i5-2410M/i5-2415M. 12-Sep-2011 intel lga775 775 PC MOTHERBOARD SERVICE MANUAL 865g Motherboard bx80547pg3400 pinout diagram for LGA775 processor socket core ich8r 946gz PPGA478 945G MOTHERBOARD CIRCUIT diagram lga775 915p

    "1pg" transistor

    Abstract: BUK617-500AE BUK617-500BE BUK617
    Text: N ANER PHILIPS/DISCRETE t.'lE D • bbSBSBl □ QBOat.D 541 « A P X Philips Sem iconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope.


    OCR Scan     		PDF BUK617-500AE/BE OT227B BUK617 -500AE "1pg" transistor BUK617-500AE BUK617-500BE

    2SB541

    Abstract: 2SD388 2SD 388 A triple diffused mesa
    Text: SEC SILICON POWER TRANSISTORS ELECTBM DEVICE 2SB 541 2 S D 3 8 8 AUDIO FREQUENCY POWER AMPLIFIER PN P/N PN SILICON TRIPLE DIFFUSED MESA TRANSISTOR D ESCRIPTIO N PACKAGE DIM EN SIO N S The 2SB541 in millimeters inches and 2SD388 are triple diffused mesa transistors


    OCR Scan     		PDF 2SB541 2SD388 2SB541 2SD388 2S8641 2SD 388 A triple diffused mesa

    541 transistor

    Abstract: irf540 switch transistor 541 IRF540FI IRF540 Application Note of IRF540 542 transistor transistor irf 540
    Text: r Z J SGS-THOMSON IRF 540/FI-541/FI IRF 542/FI-543/FI * 7 # [ « » l i L E P ’OMOigS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI • • • • VDSS 100 V 100 V ^DS on 0.077 ß


    OCR Scan     		PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI 541 transistor irf540 switch transistor 541 Application Note of IRF540 542 transistor transistor irf 540

    C1211 transistor

    Abstract: BF847 Q62702-F662 Q62702-F663 Q62702-F664 IC 41 BF
    Text: I . . 5SC » • ÛB35bQ5 DQQ4S41 2 « S I E G T ' ’' Ì ~ Z ’* PNP Silicon RF Transistors BF 847 BF 848 SIEMENS AKTIENGESELLSCHAF 541 ° B F 849 for video and AF output stages BF 847, BF 848, and BF 849 are epitaxial PNP silicon planar transistore in plastic package


    OCR Scan     		PDF E35b05 DQQ4S41 Q62702-F662 Q62702-F663 Q62702-F664 I--21 235b05 Q0QH543 BF847 C1211 transistor Q62702-F664 IC 41 BF

    Untitled

    Abstract: No abstract text available
    Text: I . . 5SC » • ÛB35bQ5 DQQ4S41 2 « S I E G T '’' Ì ~ Z ’* PNP Silicon RF Transistors BF 847 BF 848 SIEMENS AKTIENGESELLSCHAF 541 ° B F 849 for video and A F output stages BF 847, BF 848, and BF 849 are epitaxial PNP silicon planar transistore in plastic package


    OCR Scan     		PDF B35bQ5 DQQ4S41 Q62702-F662 Q62702-F663 Q62702-F664 F--13 23SbOS Q0Q4543 BF847

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N i[lC T l iO g 5 7 . S D 1 541 -01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS ■ 400 min. DME 1025 - 1150 MHz ■ 6.5 dB MIN. GAIN . REFRACTORY GOLD METALLIZATION


    OCR Scan     		PDF SD1541-01 SD1541