tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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Abstract: No abstract text available
Text: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm
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P-VQFN-20-3
Q62705-K0608
P-VQFN-20
EHA07523
GVQ09290
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544 mmic
Abstract: FMM5804X EUDYNA FMM5804
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
544 mmic
EUDYNA
FMM5804
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Untitled
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
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874 561 0 4V
Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
874 561 0 4V
FMM5702
FUJITSU MMIC LNA
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FMM5702
Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
34500
544 mmic
2732G
NF 936
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FMM5804X
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
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FMM5702X
Abstract: FMM5702
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
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FMM5804X
Abstract: fujitsu power amplifier GHz
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
FCSI0599M200
fujitsu power amplifier GHz
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874 561 0 4V
Abstract: FMM5702X FMM5702
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
874 561 0 4V
FMM5702
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marking package 545 amplifier
Abstract: marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic
Text: HMC548LP3 / 548LP3E v00.0406 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters
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HMC548LP3
548LP3E
HMC548LP3E
HMC548LP3
marking package 545 amplifier
marking 544 low noise amplifier
544 mmic
MMIC 545
smt a1 transistor
AMOBP1575P02
AMOBP1575P02-A1
AMOTECH
marking 544 amplifier
marking package 545 mmic
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Abstract: No abstract text available
Text: HMC548LP3 / 548LP3E v02.0706 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters
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HMC548LP3
548LP3E
HMC548LP3E
HMC548LP3
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L1000-BD
Abstract: XL1000-BD-EV1 XL1000-BD
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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L1000-BD
18-Jan-10
MIL-STD-883
aL1000-BD-EV1
XL1000
L1000-BD
XL1000-BD-EV1
XL1000-BD
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Untitled
Abstract: No abstract text available
Text: fi235tj05 0 0 ^ 0 5 3 4 544 S IE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 il-Gain Block 16 dB typical Gain at 1.0 GHz 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type
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fi235tj05
BGA318
OT143
Q62702-G0043
fi235bDS
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Untitled
Abstract: No abstract text available
Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an
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UPG107B
UPG107P
UPG107B
UPG107B,
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Untitled
Abstract: No abstract text available
Text: k : s ie in n i k . msmm DISCONTINUED Product Description SSW-308 DC-3 GHz Low Cost G aAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consumes less than 40uA and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless
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SSW-308
28dBm.
01BPL4
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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gaas fet marking
Abstract: No abstract text available
Text: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm
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CMH192
Q62705-K0608
P-VQFN-20
gaas fet marking
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Untitled
Abstract: No abstract text available
Text: Who1 H E W L E T T mLfim P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0470 Features • Cascadable 50 £2 Gain Block • 3 dB Bandwidth: DC to 4.0 GHz • 12.5 dBm Typical Pi jb at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz
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MSA-0470
MSA-0470
5965-9576E
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Untitled
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1
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FMM5804X
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: Ewwracs' AWR0901 900 MHz Receiver MMIC Preliminary Your GaAs IC Source RevO FEATURES I Monolithic Downconverter I 3dB Noise Figure FUNCTIONAL BLOCK DIAGRAM IE IF • 13 dB Conversion Gain ■ Small Surface Mount Package The ANADIGICS wireless receiver IC is a fully monolithic downconverter intended for cellular base station
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AWR0901
AWR0901X
A14577
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hf 01801
Abstract: LOT NUMBER year HITTITE
Text: GaAs MMIC Low Distortion Transfer Switch HITTITE MICROWAVE CORPORATION HMC159S14 JUNE 1996 Features HIGH THIRD ORDER INTERCEPT SINGLE POSITIVE SUPPLY +58 dBm +3 TO +8V HIGH POWER CAPABILITY TTL/CMOS CONTROL General Description The HMC159S14 is a low-cost transfer switch in a 14lead SOIC package for use in transmit-receive applica
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HMC159S14
HMC159S14
14lead
900MHz
58dBm
16PLC8
hf 01801
LOT NUMBER year HITTITE
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Abstract: No abstract text available
Text: HITTITE MICROWAVE CORPORATION GaAs MMIC Low Distortion Diversity Switch HMC160S14 JUNE 1996 Features HIGH THIRD ORDER INTERCEPT SINGLE POSITIVE SUPPLY +54 dBm +3 TO +8V HIGH POWER CAPABILITY TTL/CMOS CONTROL General Description The HMC160S14 is a low-cost diversity switch in a 14lead SOIC package for use in transmit-receive applica
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HMC160S14
HMC160S14
14lead
900MHz
16PLC8
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Untitled
Abstract: No abstract text available
Text: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz
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MGA-86563
OT-363
MGA-86563
MGA-86563-TR1
MGA-86563-BLK
OT-363/SC-70)
DG143S4
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