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    Leviton Manufacturing Co 13550-NW

    WH FLUOR PEDESTAL SLIDE-ON T8/12 | Leviton 13550-NW
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    Leviton Manufacturing Co 23550-NW

    T18 T12 PLNGR LMPHLDR | Leviton 23550-NW
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    SMC Corporation of America C85N25-50NW

    CYLINDER, ISO, AIR, C85 SERIES | SMC Corporation C85N25-50NW
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    RS C85N25-50NW Bulk 5 Weeks 1
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    SMC Corporation of America MDWBD63-550-NW

    CYLINDER, TIE ROD, MWB SERIES | SMC Corporation MDWBD63-550-NW
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    RS MDWBD63-550-NW Bulk 5 Weeks 1
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    SMC Corporation of America MDWBD63TN-550-NW

    CYLINDER, TIE ROD, MWB SERIES | SMC Corporation MDWBD63TN-550-NW
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    RS MDWBD63TN-550-NW Bulk 5 Weeks 1
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    550NW Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)


    OCR Scan     		PDF KM684000AL 512Kx8 550nW 385mW 684000ALP/ALP-L 600mil) KM684000ALG/ALG-L 525mii) KM684000ALT/ALT-L 684000ALR/ALR-L

    KM62256CLI

    Abstract: U813
    Text: CMOS SRAM KM62256CLI / Ll-L 32Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION > Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70,100 ns max. • Low Power Dissipation Standby (C M O S ): 550nW (Max.)L-Ver.


    OCR Scan     		PDF KM62256CLI 32Kx8 550nW 385mW KM62256CLGI/ KM62256CLTGI/CLTGI 28-TSOP1-0813 KM62256CLRGI/CLRGI-L: 28-TSOP1-Q813 KM62256CLI/CLI-L U813

    Untitled

    Abstract: No abstract text available
    Text: KM62256CLE / LE-L CMOS SRAM 32Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns max. • Low Power Dissipation Standby (C M O S ): 550nW (Max.)L-Ver.


    OCR Scan     		PDF KM62256CLE 32Kx8 550nW 275nW 385mW KM62256CLGE/ 62256CLTGE/CLTGE 28-TSOP1-0813 KM62256CLRGE/CLRGE-L:

    M5M23160

    Abstract: M5M23160XXXP M5M23160-XXXP M5M23160XXXFP
    Text: MITSUBISHI LS Is M5M231 eO-XXXP.FP.VP.RV 16777216-BIT 1048576- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152-WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23160-XXXP(,FP,VP or RV)is a 16777216-bit mask-programmable high speed read-only memory.


    OCR Scan     		PDF M5M231 16777216-BIT 16-BIT) /16777216-BIT 2097152-WORD M5M23160-XXXP( 16777216-bit 42pin 44pin M5M23160 M5M23160XXXP M5M23160-XXXP M5M23160XXXFP

    67C402

    Abstract: No abstract text available
    Text: a 67C401/13 67C402/23 First-In First-Out FIFO 64x4, 64x5 CMOS MEMORY Advanced Micro Devices 25/35 MHZ (Cascadable) FEATURES ORDERING INFORMATION 67 C 401 - 35 N • Zero standby power • High-tpeed 35-MHz shlft-ln/shlft-out rate* OPERATING — _ CONDITIONS


    OCR Scan     		PDF 67C401/13 67C402/23 35-MHz 67C4013/23) Ou02/23 67C402

    69406-1

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M23800-XXXP,FP,VP,RV 8388608-BIT 524288- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /8388608-BIT (1048576-WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23800-XXXPCFP.VP or RV)is a 8388608-bit maskprogrammable high speed read-only memory.


    OCR Scan     		PDF M5M23800-XXXP 8388608-BIT 16-BIT) /8388608-BIT 1048576-WORD M5M23800-XXXPCFP 8388608-bit 23800-XXX 42pin 44pin 69406-1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M23800-XXXP,FP,VP,RV 8388608-BIT 524288- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /8388608-BIT(1048576- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M5M23800-XXXP(,FP,VP or RV)is a 8388608-bit maskprogrammable high speed read-only memory.


    OCR Scan     		PDF M5M23800-XXXP 8388608-BIT 16-BIT) /8388608-BIT M5M23800-XXXP( 8388608-bit 44pin 48pin 524288-word

    MS6264L-10PC

    Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
    Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL MS6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip


    OCR Scan     		PDF MS6264 495mW MS6264L 550nW MS6264 500mV MS6264-70PC P28-1 MS6264-70FC MS6264L-10PC MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC r7777T MS6264L-70

    burn-in

    Abstract: No abstract text available
    Text: æ HS-6551RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 4 CMOS RAM December 1992 Features Pinouts • Functional Total Dose 2 x 104 RAD SI HS1-6551RH 22 PIN CERAMIC DIP CASE OUTLINE D7, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(SI)/s


    OCR Scan     		PDF HS-6551RH HS1-6551RH 550nW 22mW/MHz 300ns 160ns 132x160 burn-in

    28HC291L

    Abstract: HC291-55D
    Text: AT28HC291/L Features • • Fast Access Time - 35ns Low Power Dissipation 100 |iA Standby Current AT28HC291L 80 mA Active Current • E2PROM Technology -100% Reprogrammable • Direct Replacement for Bipolar PROMs • Reprogrammable 1000 times • Chip Clear


    OCR Scan     		PDF AT28HC291/L AT28HC291L) 291/291L Military/883C Military/883 AT28HC291L-55DC AT28HC291L-55LC AT28HC291L-55PC AT28HC291L-55DI AT28HC291L-55LI 28HC291L HC291-55D

    Untitled

    Abstract: No abstract text available
    Text: Ei 1 MITSUBISHI LS Is 'V f M5M23160-XXXP,FP,VP,RV 16777216-BIT 1048576- WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /16777216-BIT (2097152- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M 5M 23160-XXXP(,FP,VP or RV)is a 16777216-bit mask-programmable high speed read-only memory.


    OCR Scan     		PDF M5M23160-XXXP 16777216-BIT 16-BIT) /16777216-BIT 23160-XXXP( 42pin 44pin 48pin

    Untitled

    Abstract: No abstract text available
    Text: MOSEL PRELIMINARY MS62256A 32K X 8 High Speed CMOS Static RAM FEATURES DESCRIPTION • High-speed - 25/30/35/45/55 ns The MOSEL MS62256A is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		PDF MS62256A MS62256A 144-bit 28-pin MS62256AL 990mW 550nW 50tiA Smal2256A-25P