ST10F27x
Abstract: st10 Bootstrap STK 499 ST10 I2C diagram half adder UM0409 ST10F276 CAN bit timing T01CON STK 463 amplifier
Text: UM0409 User manual ST10F276Zx user manual Introduction This manual describes the functionality of the ST10F276Zx device. An architectural overview describes the CPU performance, the on-chip system resources, the on-chip clock generator, the on-chip peripheral blocks and the protected bits.
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UM0409
ST10F276Zx
ST10F27x
st10 Bootstrap
STK 499
ST10
I2C diagram
half adder
UM0409
ST10F276 CAN bit timing
T01CON
STK 463 amplifier
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32Kword
Abstract: S29JL032 AM29DL320G S29JL032H S29PL032J WMF MARKING AMD K2
Text: Am29DL320G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL320G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL320G
S29JL032H
S29PL032J
32Kword
S29JL032
S29JL032H
S29PL032J
WMF MARKING
AMD K2
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S29JL064H
Abstract: S29PL064J 29F400 flash
Text: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL640H
S29JL064H
S29PL064J
AM29DL320H
S29JL064H
S29PL064J
29F400 flash
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AM29DL640G
Abstract: S29JL064H S29PL064J
Text: Am29DL640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL640G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL640G
S29JL064H
S29PL064J
S29JL064H
S29PL064J
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S29JL032
Abstract: S29JL032H am29dl323 DL322 DL323 DL324 S29PL032J
Text: Am29DL32xG Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL32xG as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL32xG
S29JL032H
S29PL032J
S29JL032
S29JL032H
am29dl323
DL322
DL323
DL324
S29PL032J
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S29JL032
Abstract: DL322 DL323 DL324 S29JL032H S29PL032J
Text: Am29DL32xG Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL32xG as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL32xG
S29JL032H
S29PL032J
25686B10
S29JL032
DL322
DL323
DL324
S29JL032H
S29PL032J
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fmu 671
Abstract: AT91FR40162 AT91FR40162S spec rcb 20000 atmel at91 series
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation
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32-bit
16-bit
1024K
128-bit
20-Jun-05
fmu 671
AT91FR40162
AT91FR40162S
spec rcb 20000
atmel at91 series
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fmu 671
Abstract: 6174 AT91FR40162S
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – EmbeddedICE In-circuit Emulation
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32-bit
16-bit
1024K
128-bit
6174B
07-Nov-05
fmu 671
6174
AT91FR40162S
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C0000h-DFFFFh
Abstract: AN1557 M29KW016E M29KW032E M29W320D TFBGA48
Text: AN1557 APPLICATION NOTE How to Design-in LightFlash Memories, Ensuring Compatibility with Standard Flash Memories in DVD and TV Applications CONTENTS INTRODUCTION • INTRODUCTION ■ DESCRIPTION OF LIGHTFLASH™ FLASH MEMORIES ■ PACKAGES ■ SIGNAL DESCRIPTIONS
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AN1557
M29KWxxxE)
C0000h-DFFFFh
AN1557
M29KW016E
M29KW032E
M29W320D
TFBGA48
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AT91FR40162SB
Abstract: No abstract text available
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – EmbeddedICE In-circuit Emulation
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32-bit
16-bit
1024K
128-bit
6410Bâ
12-Jan-10
AT91FR40162SB
AT91FR40162SB
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AT91FR40162SB
Abstract: AT91FR40162S AT91FR40162SB-CU
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – EmbeddedICE In-circuit Emulation
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PDF
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32-bit
16-bit
1024K
128-bit
6410B
12-Jan-10
AT91FR40162SB
AT91FR40162SB
AT91FR40162S
AT91FR40162SB-CU
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AT91FR40162SB
Abstract: AT91FR40162SB-CU A1827
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – EmbeddedICE In-circuit Emulation
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32-bit
16-bit
1024K
128-bit
02-Jun-08
AT91FR40162SB
AT91FR40162SB-CU
A1827
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ES29LV800EB-70TG
Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
Text: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV800E
8/512K
125oC
16Kbyte
32Kbyte
64Kbyte
15sectors
ES29LV800ET
ES29LV800EB
48-pin
ES29LV800EB-70TG
es29lv800et-70tg
ES29LV800ET-70WC
ES29LV800
ES29LV800E
ES29LV800ET-70TGI
ES29LV800EB-70TGI
ES29LV800ET70TG
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ES29LV400EB-70TGI
Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400E
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400ET
ES29LV400EB
48-pin
ES29LV400EB-70TGI
ES29LV400EB-70TG
ES29LV400E
BB 555
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ES29LV160EB-70TGI
Abstract: es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC
Text: EE SS II Excel Semiconductor inc. ES29LV160E 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV160E
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160ET
ES29LV160EB
48-pin
48-ball
ES29LV160EB-70TGI
es29lv160eb-70tg
ES29LV160EB-70WGI
ES29LV160E
ES29LV160EB-70TCI
EXCEL SEMICONDUCTOR INC
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ES29LV400D
Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Text: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400D
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400DT
ES29LV400DB
48-pin
ES29LV400D
ES29LV400DT-70RTG
ES29LV400DB-70RTG
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ES29LV320EB-70TG
Abstract: es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI
Text: EE SS II Excel Semiconductor inc. ES29LV320E 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V ~ 3.6V for read, program and erase operations
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ES29LV320E
32Mbit
125oC
64Kbyte
256byte
ES29LV320ET
ES29LV320EB
ES29LV320EB-70TG
es29lv320eb-70tgi
ES29LV320E
si 462 laser diode
ES29LV320
ES29LV320ET-70WGI
ES29LV320ET-70TGI
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ES29LV320DB-80RTG
Abstract: ES29LV320 ES29LV320D
Text: EE SS II Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV320D
32Mbit
125oC
64Kbyte
256byte
ES29LV320DT
ES29LV320DB
ES29LV320DB-80RTG
ES29LV320
ES29LV320D
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ES29LV160D
Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
Text: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV160D
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160DT
ES29LV160DB
48-pin
48-ball
ES29LV160D
es29lv160dt-70rtci
ES29LV160DT-70RTG
ES29LV160DT-70RTC
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ES29LV160DB-90TG
Abstract: si 462 laser diode ES29LV160D 12wg ES29LV160DT
Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
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ES29LV160D
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160DT
ES29LV160DB
48-pin
48-ball
ES29LV160DB-90TG
si 462 laser diode
ES29LV160D
12wg
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PWM USING IC 555 TIMER
Abstract: circuit diagram of line follower robot LM358 555 pwm line follower robot using LM358 voltage to frequency converter using ic 555 timer telephone keypad interface circuit with dtmf LM 358 opamp audio amplifier using pwm 555 timer pwm variable frequency drive circuit diagram line follower robot without microcontroller
Text: Basic Analog and Digital Student Guide VERSION 1.3 WARRANTY Parallax, Inc. warrants its products against defects in materials and workmanship for a period of 90 days. If you discover a defect, Parallax will, at its option, repair, replace, or refund the purchase price. Simply call for a Return
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14-DAY
PWM USING IC 555 TIMER
circuit diagram of line follower robot
LM358 555 pwm
line follower robot using LM358
voltage to frequency converter using ic 555 timer
telephone keypad interface circuit with dtmf
LM 358 opamp
audio amplifier using pwm 555 timer
pwm variable frequency drive circuit diagram
line follower robot without microcontroller
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ES29LV320
Abstract: ES29LV320D
Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
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ES29LV320D
32Mbit
125oC
64Kbyte
256byte
ES29LV320DT
ES29LV320DB
ES29LV320
ES29LV320D
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Untitled
Abstract: No abstract text available
Text: AMDH Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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OCR Scan
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PDF
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Manufactured on 0.32 pm process technology — Compatible with 0.5 [am Am29F200A device
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
20-year
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