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    557 SOT-143 MARKING Search Results

    557 SOT-143 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    557 SOT-143 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    GDE 13a DIODE

    Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient


    Original     		PDF OT-23 GDE 13a DIODE diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A

    LMT87-Q1

    Abstract: LMT86-Q1
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMT84, LMT84-Q1 SNIS167B – MARCH 2013 – REVISED MAY 2014 LMT84/LMT84-Q1 1.5V, SC70/TO-92/TO-126, Analog Temperature Sensors with Class-AB Output 1 Features 3 Description


    Original     		PDF LMT84, LMT84-Q1 SNIS167B LMT84/LMT84-Q1 SC70/TO-92/TO-126, O-126 LMT87-Q1 LMT86-Q1

    LMT86-Q1

    Abstract: LMT87-Q1
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMT84, LMT84-Q1 SNIS167B – MARCH 2013 – REVISED MAY 2014 LMT84/LMT84-Q1 1.5V, SC70/TO-92/TO-126, Analog Temperature Sensors with Class-AB Output 1 Features 3 Description


    Original     		PDF LMT84, LMT84-Q1 SNIS167B LMT84/LMT84-Q1 SC70/TO-92/TO-126, O-126 LMT86-Q1 LMT87-Q1

    Untitled

    Abstract: No abstract text available
    Text: LMT84 www.ti.com SNIS167 – MARCH 2013 LMT84 1.5V, SC70, Analog Temperature Sensor with Class-AB Output Check for Samples: LMT84 FEATURES DESCRIPTION • • The LMT84 is a precision analog output CMOS integrated-circuit temperature sensor that operates at


    Original     		PDF LMT84 SNIS167 LMT84

    Untitled

    Abstract: No abstract text available
    Text: LMT84 www.ti.com SNIS167 – MARCH 2013 LMT84 1.5V, SC70, Analog Temperature Sensor with Class-AB Output Check for Samples: LMT84 FEATURES DESCRIPTION • • The LMT84 is a precision analog output CMOS integrated-circuit temperature sensor that operates at


    Original     		PDF LMT84 SNIS167 LMT84

    Untitled

    Abstract: No abstract text available
    Text: LMT84 www.ti.com SNIS167 – MARCH 2013 LMT84 1.5V, SC70, Analog Temperature Sensor with Class-AB Output Check for Samples: LMT84 FEATURES DESCRIPTION • • The LMT84 is a precision analog output CMOS integrated-circuit temperature sensor that operates at


    Original     		PDF LMT84 SNIS167 LMT84

    Untitled

    Abstract: No abstract text available
    Text: LMT84 www.ti.com SNIS167 – MARCH 2013 LMT84 1.5V, SC70, Analog Temperature Sensor with Class-AB Output Check for Samples: LMT84 FEATURES DESCRIPTION • • The LMT84 is a precision analog output CMOS integrated-circuit temperature sensor that operates at


    Original     		PDF LMT84 SNIS167 LMT84

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original     		PDF NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007

    kf 203 transistor

    Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE68100 NE68118

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original     		PDF NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009

    Untitled

    Abstract: No abstract text available
    Text: LMT84, LMT84-Q1 www.ti.com SNIS167A – MARCH 2013 – REVISED JUNE 2013 LMT84/LMT84-Q1 1.5V, SC70, Analog Temperature Sensors with Class-AB Output Check for Samples: LMT84, LMT84-Q1 FEATURES DESCRIPTION • The LMT84/LMT84-Q1 are precision analog output CMOS integrated-circuit temperature sensors that


    Original     		PDF LMT84, LMT84-Q1 SNIS167A LMT84/LMT84-Q1 LMT84-Q1 AEC-Q100

    LMT84DCK

    Abstract: No abstract text available
    Text: LMT84, LMT84-Q1 www.ti.com SNIS167A – MARCH 2013 – REVISED JUNE 2013 LMT84/LMT84-Q1 1.5V, SC70, Analog Temperature Sensors with Class-AB Output Check for Samples: LMT84, LMT84-Q1 FEATURES DESCRIPTION • The LMT84/LMT84-Q1 are precision analog output CMOS integrated-circuit temperature sensors that


    Original     		PDF LMT84, LMT84-Q1 SNIS167A LMT84/LMT84-Q1 LMT84-Q1 AEC-Q100 LMT84DCK

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn