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    55C 16V Search Results

    55C 16V Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RAA230231GSB#HA0 Renesas Electronics Corporation 16V Input, 3A, Dual Step-Down DC/DC Converter + Battery Backup Visit Renesas Electronics Corporation
    AMC1306M25EDWVR Texas Instruments Reinforced isolated modulator with -55C extended temperature range 8-SOIC -55 to 125 Visit Texas Instruments
    SF Impression Pixel

    55C 16V Price and Stock

    Others ZMM55C16V-HT

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    Chip 1 Exchange ZMM55C16V-HT 12,753
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    55C 16V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Organic Conductive Polymer Al. E. Capacitors OCVU Series: Surface Mount,125°C FEATURES •125°C, 2,000 hours assured. •Ultra Low ESR • RoHS Compliance SPECIFICATIONS Items Operating Temperature Range Capacitance Tolerance Performance -55C ~ +125°C +20% at 120Hz, 20°C


    Original     		PDF 120Hz, V-16V: 000Hrs C1CI05

    Untitled

    Abstract: No abstract text available
    Text: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6228-55C

    BUK6210-55C

    Abstract: No abstract text available
    Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6210-55C BUK6210-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6210-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6228-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK662R7-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6210-55C

    BUK6217-55C

    Abstract: No abstract text available
    Text: BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6217-55C BUK6217-55C

    1060 fet

    Abstract: No abstract text available
    Text: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6E3R2-55C 1060 fet

    Untitled

    Abstract: No abstract text available
    Text: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6E3R2-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK653R2-55C

    Untitled

    Abstract: No abstract text available
    Text: BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK653R2-55C

    buk662r7

    Abstract: No abstract text available
    Text: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK662R7-55C buk662r7

    MiFare DESFIre

    Abstract: No abstract text available
    Text: BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK653R5-55C MiFare DESFIre

    Untitled

    Abstract: No abstract text available
    Text: BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK653R5-55C

    BUK6217-55C

    Abstract: No abstract text available
    Text: DP AK BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6217-55C BUK6217-55C

    BUK6217-55C

    Abstract: No abstract text available
    Text: DP AK BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6217-55C BUK6217-55C

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 21 December 2011 Preliminary data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and


    Original     		PDF BUK6C2R1-55C

    BUK6C2R1-55C

    Abstract: No abstract text available
    Text: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and


    Original     		PDF BUK6C2R1-55C BUK6C2R1-55C

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK663R5-55C

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK663R5-55C

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and


    Original     		PDF BUK6C2R1-55C

    transistor C017

    Abstract: HMC-C017
    Text: HMC-C017 v02.1007 WIDEBAND LNA MODULE, 17 - 27 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Noise Figure: 2.75 dB Gain: 18 dB P1dB Output Power: +14 dBm 50 Ohm Matched Input/Output Regulated Supply: Vs = +8V to +16V Typical Applications Hermetically Sealed Module


    Original     		PDF HMC-C017 HMC-C017 231CCSF transistor C017

    Untitled

    Abstract: No abstract text available
    Text: HMC-C017 v00.0905 WIDEBAND LNA MODULE, 17 - 27 GHz AMPLIFIERS - CONNECTORIZED MODULES 16 Features Noise Figure: 2.75 dB Gain: 18 dB P1dB Output Power: +14 dBm 50 Ohm Matched Input/Output Regulated Supply: Vs = +8V to +16V Typical Applications Hermetically Sealed Module


    Original     		PDF HMC-C017 HMC-C017 231CCSF