DIODE BZX
Abstract: BZX5V1 BZX55C6V2 spice model zener BZX 55c 5v1 BZX30 diode zener 5v1 55c MODEL ZENER 5V1 diode zener 3v6 bzx 55c Zener diode bzx diode zener BZX 55C
Text: BZX55_PSpice VISHAY Vishay Semiconductors BZX55 Spice Parameters BZX55C3V6 BZX55C5V1 * Technology: DISCRETE DEVICE * Device: Zener Diode BZX 55C 3V6 * Type: Typical nom * Model established: 12.11.1996, by S.Reuter, TM1iC63-HN * Wafer: * Remarks: Macro model
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BZX55
BZX55C3V6
BZX55C5V1
TM1iC63-HN
D-74025
25-Nov-03
DIODE BZX
BZX5V1
BZX55C6V2 spice model
zener BZX 55c 5v1
BZX30
diode zener 5v1 55c
MODEL ZENER 5V1
diode zener 3v6 bzx 55c
Zener diode bzx
diode zener BZX 55C
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Untitled
Abstract: No abstract text available
Text: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6228-55C
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BUK6210-55C
Abstract: No abstract text available
Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6210-55C
BUK6210-55C
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Untitled
Abstract: No abstract text available
Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6210-55C
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Untitled
Abstract: No abstract text available
Text: BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6228-55C
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Abstract: No abstract text available
Text: BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK662R7-55C
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Untitled
Abstract: No abstract text available
Text: BUK663R5-55C N-channel TrenchMOS FET Rev. 01 — 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK663R5-55C
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Untitled
Abstract: No abstract text available
Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6210-55C
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Untitled
Abstract: No abstract text available
Text: BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK654R6-55C
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Untitled
Abstract: No abstract text available
Text: BUK6507-55C N-channel TrenchMOS logic and standard level FET Rev. 01 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6507-55C
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BUK6217-55C
Abstract: No abstract text available
Text: BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6217-55C
BUK6217-55C
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1060 fet
Abstract: No abstract text available
Text: BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK6E3R2-55C
1060 fet
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Untitled
Abstract: No abstract text available
Text: B ZX 55C Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications 94 9367 Voltage stabilization
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200mA
D-74025
30-Sep-98
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21PT60
Abstract: 21pt20 IR 21PT10
Text: INTERNATIONAL RECTIFIER 4855^52 SS DE |4flSS4SE 0 0 0 ^ 3 1 fl D 55C 04 93 1 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.085 INTERNATIONAL RECTIFIER IOR SiPT SERIES SO Amp Encapsulated Rectifier Diodes i Major Ratings and Characteristics 21PT Units • f AV
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DD04T33
21PT60
21pt20 IR
21PT10
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telefunken ta 250
Abstract: X104K
Text: B ZM 55C Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55C. / TZMC. • Very sharp reverse characteristic • Low reverse current level
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BZT55C.
300K/W
D-74025
30-Sep-98
telefunken ta 250
X104K
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1n4816
Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
Text: INTERNATI ONAL RECTIFIER 4855452 SS d ËTJ 4ÖSS4S5 D D D 4 IiOb D 55C 04906 INTERNATIONAL R EC TIFIER Data Sheet No. PD-2.004C INTERNATIONAL RECTIFIER I O R 1N4816,1N5052,1QD, SOD SERIES 1.5 and 2 .0 Amp Molded Silicon Rectifier Diodes Description/Features
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1N4816
1N5052
1N4816-22
1N5052-54
1N5054
PD2004C
10D10
1n5053
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4AF2
Abstract: 4af05 4af1 ir 4AF Series 21PT20 4AF2 IR 636A2 21PT40 21PT 21PT10
Text: INTERNA TIO NAL RECTIFIER 4655^52 55 INTERNATIONAL DE § 4flSS452 O D O M ' m 55C R EC TIFIER fl f D 04931 Data Sheet No. PD-2.085 INTERNATIONAL RECTIFIER IO R SiPT SERIES SO Amp Encapsulated Rectifier Diodes Major Ratings and Characteristics Units •f AV
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14flSS452
4AF2
4af05
4af1 ir
4AF Series
21PT20
4AF2 IR
636A2
21PT40
21PT
21PT10
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35MB60A
Abstract: 35MB40A 100JB2L 36MB40A 100JB10L 26MB 250JB10L 35MB20A 35MB10A 35MB100A
Text: SS INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER DE^I4055452 OOOSlfl? 55C 05167 D Data Sheet No. PD-4.007D INTERNATIONAL RECTIFIER IÖ R 100JB, S50JB, 26MB, 35MB ANO 36MB SERIES 10 to 35 amp rectifier bridges Description/Features Major Ratings and Characteristics
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100JB,
250JB,
100JB
250JB
35MB60A
35MB40A
100JB2L
36MB40A
100JB10L
26MB
250JB10L
35MB20A
35MB10A
35MB100A
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oms 450
Abstract: IRD3899 IRD3900 IRD3901 IRD3903 IRD3909 IRD3913 AV2030 b101 diode g810
Text: SS INTERNATIONAL RECTIFIER 4855452 d Ë T | 4ASS4SS DDD4TÌ3 Ö D 55C 0 4 9 9 3 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.092 Y ' INTERNATIONAL RECTIFIER IÖR of ~ < 1 IRD3899, IRD3909 SERIES 8 0 and 3 0 Amp Fast Recovery Rectifier Diodes Description Major Ratings and Characteristics
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D004TÃ
IRD3899
IRD3903
IRD3909
IRD3913
B-104
oms 450
IRD3899
IRD3900
IRD3901
IRD3909
IRD3913
AV2030
b101 diode
g810
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1N2071
Abstract: 1N2070 1N2069 1N2069A international rectifier silicon rectifier
Text: INTERNATIONAL RECTIFiER S5 '48 5 5 4 5 2 I N T E R N A T I O N A L D E | 4Ö554S2 55C RECTIFIER 0Ö04T00 04900 Data Sheet No. PD-2.003C INTERNATIONAL RECTIFIER IOR 1NS069, A SERIES 750 mA Silicon Rectifier Diodes Major Ratings and Characteristics 1N2069A Units
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554S2
0D04T00
1NS069,
1N2069
1N2069A
1N2069,
1N2069A
5S45E
1N2071
1N2070
international rectifier silicon rectifier
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1N5401
Abstract: 1N5401+equivalent
Text: INTERNATIONAL RECTIFIER 4855452 SS IN TER N ATIO N A L DE|4flS5452 O O C m Q ì 55C R E C T IF IE R 4 | 04909 D Data Sheet No. PD-2.083 àt-tsr INTERNATIONAL RECTIFIER IÖR 1N54Ü1 SERIES 3 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics
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4flS5452
1N5401
125in)
1N5401
1N5401+equivalent
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FULL WAVE RECTIFIER and waveforms
Abstract: s70hf 85hf120 70HF 70HFI 41HF120 86HFR10 70hf120 40HF 40HF10
Text: SS INTERNATIONAL RECTIFIER 4 8 55 ^ 52 DE | 4ÖS545E 0004c14b □ | 55C INTERNATIONAL R E C T I F I E R 0*t946 Data Sheet No. PD-2.014D INTERNATIONAL RECTIFIER IÖR 40HF, 70HF, 85HF SERIES 4 0 , 7 0 and 85 Amp Power Silicon Rectifier Diodes Major Ratings and Characteristics
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5545E
CK946
FULL WAVE RECTIFIER and waveforms
s70hf
85hf120
70HF
70HFI
41HF120
86HFR10
70hf120
40HF
40HF10
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1N4822
Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
Text: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features
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DD04clDb
1IM4816,
1N4816
1N5052
1N4816-22
1N5052-54
1N4822
1N4820
1N5054
IR 20D2
10d05
IR 10D4
IR 10D 7
7510D1
1N4817
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4AF2
Abstract: 4AF4 4AF Series 4af1 IR 4af2 B-47PP 4AF2 IR 8AF1 Diode 4AF2 4af1 ir
Text: ~55 INTERNATIONAL RECTIFIER 4855452 IN T E R N A T IO N A L I F|4fl554SS □DOMciB4 3 55C R E C T IF IE R 04934 Data Sheet No. PD-2.086 r~ o i - t ? ' f ï &i'¿a IOR INTERNATIONAL RECTIFIER 4AF, 8AF SERIES S5 and 50 Amp Pressfit Rectifier Diodes Major Ratings and Characteristics
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4flS54SS
4AF2
4AF4
4AF Series
4af1
IR 4af2
B-47PP
4AF2 IR
8AF1
Diode 4AF2
4af1 ir
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