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    55N03 Search Results

    55N03 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    NP55N03SUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP55N03SUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    55N03 Price and Stock

    onsemi NTMFS0D55N03CGT1G

    WIDE SOA
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    DigiKey NTMFS0D55N03CGT1G Cut Tape 518 1
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    NTMFS0D55N03CGT1G Reel 15 Weeks 1,500
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    Mouser Electronics NTMFS0D55N03CGT1G
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    Richardson RFPD NTMFS0D55N03CGT1G 1,500
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    Flip Electronics NTMFS0D55N03CGT1G 1,548,000
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    Wuhan P&S NTMFS0D55N03CGT1G 1,878 1
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    Taiwan Semiconductor TSM055N03PQ56-RLG

    MOSFET N-CH 30V 80A 8PDFN
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    DigiKey TSM055N03PQ56-RLG Cut Tape 100 1
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    Taiwan Semiconductor TSM055N03EPQ56-RLG

    MOSFET N-CH 30V 80A 8PDFN
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    DigiKey TSM055N03EPQ56-RLG Cut Tape 70 1
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    Taiwan Semiconductor TSM055N03EPQ56

    30V, 80A, SINGLE N-CHANNEL POWER
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    DigiKey TSM055N03EPQ56 Reel 5,000
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    NXP Semiconductors PHD55N03LTA,118

    MOSFET N-CH 25V 55A DPAK
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    Find more 55N03 price and stock on Findchips.com

    55N03 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    55N03L Unknown N-Channel Logic Level E nhancement Mode Field E ffect Transistor Original PDF
    55N03LTA Philips Semiconductors Logic Level FET Original PDF

    55N03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    55N03L

    Abstract: 55n03
    Text: S DP /B 55N03L May,2004 ver1.1 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 14 @ V G S = 10V


    Original     		55N03L O-220 O-263 55N03L 55n03 PDF

    55n03

    Abstract: 55N03L
    Text: S DP /B 55N03L S eptember , 2002 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V


    Original     		55N03L O-220 O-263 55n03 55N03L PDF

    55N03L

    Abstract: 55N03
    Text: 55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V 30V S uper high dense cell design for extremely low R DS (ON).


    Original     		55N03L O-220 O-263 55N03L 55N03 PDF

    NEC TRANSISTOR MARKING CODE

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 55N03SUG is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin PACKING PACKAGE Tape TO-252(MP-3ZK)


    Original     		NP55N03SUG NP55N03SUG O-252 O-252) NEC TRANSISTOR MARKING CODE PDF

    55N03

    Abstract: NP55N03SUG NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note


    Original     		NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 55N03 55A, 25V, RDS ON 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 55N03 provide the designer with the best combination of fast switching,ruggedized device design,


    Original     		SSD55N03 O-252 SID55N03 O-252 55N03 16-Jun-2011 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    55N03

    Abstract: NP55N03SUG
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    npn transistor bc148 datasheet

    Abstract: pin configuration NPN transistor BC147 BC148 pin configuration BC157 DATA SHEET npn transistor smd w19 pin configuration NPN transistor BC148 DATASHEET OF TRANSISTOR BC158 TRANSISTOR BC135 TRANSISTOR BC147 jog image bc159 npn switching transistor
    Text: R Intel 810E2 Chipset Platform Design Guide January 2001 Document Number: 298248-001 ® Intel 810E2 Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		810E2 npn transistor bc148 datasheet pin configuration NPN transistor BC147 BC148 pin configuration BC157 DATA SHEET npn transistor smd w19 pin configuration NPN transistor BC148 DATASHEET OF TRANSISTOR BC158 TRANSISTOR BC135 TRANSISTOR BC147 jog image bc159 npn switching transistor PDF

    55n03

    Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
    Text: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated


    Original     		C411J3 MTN55N03J3 O-252 UL94V-0 55n03 MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750 PDF

    kc-1206

    Abstract: manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227
    Text: Intel 815E Scalable Performance Board Development Kit Manual April 2001 Order Number: 273432-003 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		Index-111 kc-1206 manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227 PDF

    55N03

    Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note


    Original     		NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG-E1-AY NEC to-252 marking information PDF

    MOSFET 55N03

    Abstract: 55n03
    Text: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy


    OCR Scan     		TSM55N03 O-252 TSM55N MOSFET 55N03 55n03 PDF

    MOSFET 55N03

    Abstract: No abstract text available
    Text: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy


    OCR Scan     		TSM55N03 O-252 MOSFET 55N03 PDF