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    Teledyne e2v QP7C261-55WMB

    PROM, UV ERASABLE, 8K X 8, 55 NS ACCESS - Rail/Tube (Alt: QP7C261-55WMB)
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    Avnet Americas QP7C261-55WMB Tube 250
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    Teledyne e2v CY7C264-55WMB

    PROM, UV ERASABLE, 8K X 8, 55 NS ACCESS - Rail/Tube (Alt: CY7C264-55WMB)
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    Teledyne e2v CY7C263-55WMB

    PROM, UV ERASABLE, 8K X 8, 55 NS ACCESS - Rail/Tube (Alt: CY7C263-55WMB)
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    Teledyne e2v CY7C287-55WMB

    PROM, UV ERASABLE, 64K X 8, REGISTERED, - Rail/Tube (Alt: CY7C287-55WMB)
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    Teledyne e2v CY7C271-55WMB

    PROM, UV ERASABLE, 32K X 8, 55 NS ACCESS - Rail/Tube (Alt: CY7C271-55WMB)
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    55WMB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SCD#QM5323 Source Control Drawing Upscreening/Manufacturing Specification P/N FT7C261-55WMB-CY Title Page . List of Effective Pages .


    Original     		PDF QM5323 FT7C261-55WMB-CY

    dip-p8

    Abstract: PY264
    Text: PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Single 5V±10% Power Supply High Speed – 35/45/55 ns Commercial – 35/45/55 ns (Military) Windowed devices for reprogramming Low Power Operation: – 660 mW Commercial – 770 mW Military


    Original     		PDF PY264 24-Pin PY264 EPROM102 EPROM102 Jul-2007 dip-p8

    C2877

    Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
    Text: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.


    Original     		PDF CY7C287 28-pin, 300-mil CY7C287 C2877 c2874 7C28 c2872 C2879 7C287-65 CY7C287-55WMB

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    27c256-200

    Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
    Text: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance


    OCR Scan     		PDF CY27C256 CY27C256 768-word 600-mil CY27C256Tâ 28-Thin 27c256-200 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45

    7c251

    Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
    Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-mil 600-mil CY7C254 384-word Y7C251 7c251 a1s smd smd code A1s smd diode code A1s 65WMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-m 600-mil CY7C251 CY7C254 384-word PROMs3802 CY7C254â

    Untitled

    Abstract: No abstract text available
    Text: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance


    OCR Scan     		PDF CY27C128 CY27C128 384-word 600-mil cY27C128-200WMB 28-Lead 600-Mil)

    7C251

    Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
    Text: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-mil 600-mil 384-word Y7C251 7C251 C2515 SMD DIODE A13 C251-5 CY7C251-45WC 01d smd code smd diode code A1s 5962-895370

    46E SMD CODE

    Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
    Text: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word T-46-13-29 46E SMD CODE 7C271 7C274 C2716 RAAW

    27H256

    Abstract: mil std 1275 power supply H-256 H2565
    Text: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


    OCR Scan     		PDF CY27H256 32-pin 28-pin, 600-mil CY27H256 28-pin 27H256 mil std 1275 power supply H-256 H2565

    Untitled

    Abstract: No abstract text available
    Text: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


    OCR Scan     		PDF CY27H512 28-pin 28-pin, 600-mil 32-pin CY27H512

    Untitled

    Abstract: No abstract text available
    Text: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­


    OCR Scan     		PDF CY7C286 CY7C287 CY7C286 CY7C287 28-pin, 600-mil 7C286)

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and


    OCR Scan     		PDF CY27H256 28-pin, 600-mil 32-pin 28-pin CY27H256 001S2m

    27C256

    Abstract: 27C256-45 CY27C256 27c256-200 27C256-150
    Text: 32K X 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and m ilitary • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less th a n 83 mW when deselected • ± 10% Power supply tolerance Functional Description


    OCR Scan     		PDF CY27C256 768-word 600-miI CY27C256Tâ 28-Lead 300-Mil) 27C256 27C256-45 27c256-200 27C256-150

    C2792

    Abstract: C2794 C279
    Text: -• = = = = CYPRESS - ~ ~ SEMICONDUCTOR CY7C279 ^ " = Reprogrammable 32K x 8 Registered PROM • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 3 ns max. set-up — 35 ns clock to output • Low power — 660 m\V commercial


    OCR Scan     		PDF CY7C279 300-mil, 28-pin CY7C279â 45WMB 28-Lead 300-Mil) 32-Lead C2792 C2794 C279

    Untitled

    Abstract: No abstract text available
    Text: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)


    OCR Scan     		PDF CY27H010 32-pin 32-pin, 600-mil CY27H010

    Untitled

    Abstract: No abstract text available
    Text: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected


    OCR Scan     		PDF CY27C256 CY27C256 768-word 600-mil

    LC 7258

    Abstract: 333Q CY7C287 32fl diode A14A
    Text: CY7C287 * CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tc o = 15 ns


    OCR Scan     		PDF CY7C287 300-mil CY7C287 28-p32-Pin CY7C287â 65QMB 32-Pin 65WMB LC 7258 333Q 32fl diode A14A

    A15C

    Abstract: CY7C287 CY7C287-55PC LCOS uv
    Text: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)


    OCR Scan     		PDF CY7C286 CY7C287 7C287) 7C286) 7C287 300-mil A15C CY7C287 CY7C287-55PC LCOS uv

    7C271

    Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
    Text: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C274 768-word 7C271/7C274 CY7C271 7C271 CY7C271-45WMB 333Q C271 7C274 CY7C274-55WC 57C27-1 7C271-55

    CY27C040

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION CYPRESS MILITARY SPECIFICATIONS Group A Subgroup Testing DC C haracteristics Para neter Subgroups VoH 1, 2, 3 VOL \ 1, 2, 3 VlH 1,2,-3 \ lo z ' 1 ,2 ,3 / \ Iix Icc 1, 2, 3 \ V il 1 ,2 ,3 \ _ IsB > 1 ,2 ,3 .\ \ •" 1 ,2 ,3 - Sw itching C haracteristics


    OCR Scan     		PDF CY27C040 CY27C128 CY27C128--150JC CY27C128--150PC 28-150W CY27C128--150WMB CY27C128-- 200JC --200PC CY27C040

    7C261

    Abstract: 7c264
    Text: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower


    OCR Scan     		PDF 7C261) 300-mil 600-mil CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 24-Lead 7C261 7c264

    LC 7258

    Abstract: C-274
    Text: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)


    OCR Scan     		PDF QQ1GS50 CY7C271 CY7C274 300-mil 7C271) LC 7258 C-274